Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | PAM | P19021 | 3/20 | 0.39 |
| ▸ | HMGCR | P04035 | 5/20 | 0.38 |
| ▸ | CYP4F2 | P78329 | 1/20 | 0.37 |
| ▸ | CYP4A11 | Q02928 | 1/20 | 0.37 |
| ▸ | TSHR | P16473 | 2/20 | 0.33 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.33 |
| ▸ | CTH | P32929 | 1/20 | 0.33 |
| ▸ | CBS | P35520 | 1/20 | 0.33 |
| ▸ | THPO | P40225 | 1/20 | 0.33 |
| ▸ | FFAR3 | O14843 | 1/20 | 0.33 |
| ▸ | THRB | P10828 | 1/20 | 0.32 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.32 |
| ▸ | TBXA2R | P21731 | 1/20 | 0.32 |
| ▸ | ADRA1A | P35348 | 1/20 | 0.32 |
| ▸ | RIPK1 | Q13546 | 3/20 | 0.32 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.31 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.31 |
| ▸ | HIF1A | Q16665 | 1/20 | 0.31 |
| ▸ | GLA | P06280 | 1/20 | 0.31 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL800517 | 0.83 | CYP4F2 (0.35) | HMGCRCYP4F2CYP4A11RIPK1 | |
| SCHEMBL16352658 | 0.82 | CYP4F2 (0.37) | HMGCRCYP4F2CYP4A11 | |
| SCHEMBL22926635 | 0.80 | KDM4E (0.40) | PAMHMGCRCYP4F2CYP4A11TSHR | |
| SCHEMBL17589176 | 0.80 | MAPK1 (0.42) | HMGCRCYP4F2CYP4A11SMN1; SMN2 | |
| SCHEMBL17589170 | 0.80 | TDP1 (0.38) | HMGCRCYP4F2CYP4A11 | |
| SCHEMBL17708339 | 0.80 | CYP4F2 (0.36) | HMGCRCYP4F2CYP4A11THPOCYP2C19 | |
| SCHEMBL20100807 | 0.79 | PAM (0.33) | PAMCYP4F2CYP4A11 | |
| SCHEMBL15697275 | 0.78 | PAM (0.37) | PAMHMGCRTSHRSMN1; SMN2CTH | |
| SCHEMBL10033549 | 0.78 | CYP4F2 (0.35) | HMGCRCYP4F2CYP4A11THRB | |
| SCHEMBL2607778 | 0.78 | TET2 (0.38) | HMGCRCYP4F2CYP4A11TSHRL3MBTL1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 219 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11662663-B2 | Substrate protective film-forming composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-30 | — | — | US | disclosed |
| US-20180120705-A1 | PATTERN FORMING METHOD AND ELECTRONIC DEVICE MANUFACTURING METHOD | FUJIFILM CORPORATION (JP) | 2018-05-03 | — | — | US | disclosed |
| US-20180087010-A1 | PRE-RINSING LIQUID, PRE-RINSING TREATMENT METHOD, AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2018-03-29 | — | — | US | disclosed |
| US-9926462-B2 | Composition for forming liquid immersion upper layer film, and polymer | JSR CORPORATION (JP) | 2018-03-27 | — | — | US | disclosed |
| US-9778568-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-10-03 | — | — | US | disclosed |
| US-9778568-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-10-03 | — | — | US | disclosed |
| US-9612535-B2 | Pattern forming method, electron beam- or extreme ultraviolet-sensitive resin composition, resist film using the same, method of manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2017-04-04 | — | — | US | disclosed |
| US-20170073541-A1 | COMPOSITION FOR FORMING LIQUID IMMERSION UPPER LAYER FILM, AND POLYMER | JSR CORPORATION (JP) | 2017-03-16 | — | — | US | disclosed |
| US-9540535-B2 | Composition for forming liquid immersion upper layer film, and polymer | JSR CORPORATION (JP) | 2017-01-10 | — | — | US | disclosed |
| US-9519213-B2 | Patterning process and resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-12-13 | — | — | US | disclosed |
| US-20080096131-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-04-24 | — | — | US | disclosed |
| US-7354693-B2 | Polymer, resist protective coating material, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-04-08 | — | — | US | disclosed |
| US-20080008960-A1 | Mixture of an adamantane acrylic ester resin which becomes soluble in alkaline developer under action of an acid and sulfonium salt acid generator; microlithography with advantages of resolution, pattern density dependence and mask fidelity; use in precise microfabrication | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-10 | — | — | US | disclosed |
| US-20080008962-A1 | Polymerizable ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-10 | — | — | US | disclosed |
| US-20080008961-A1 | POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-10 | — | — | US | disclosed |
| US-20080008959-A1 | Resin comprising monomers of cyclopentyl- or cyclohexyl (meth)acrylate; hydroxyadamantyl (meth)acrylate; 3,8-epoxy-6-oxabicyclo[3.2.1]octyl (meth)acrylat;, and/or fluoroalkyl (meth)acrylate; ArF lithography; resolution; forms a pattern with high rectangularity | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-10 | — | — | US | disclosed |
| US-20070231741-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-10-04 | — | — | US | disclosed |
| US-20070178407-A1 | Polymer, resist protective coating material, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2007-08-02 | — | — | US | disclosed |
| US-20070122741-A1 | Resist protective coating material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-31 | — | — | US | disclosed |
| US-20070003867-A1 | Resist protective coating material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-01-04 | — | — | US | disclosed |