SCHEMBL8031969

SCHEMBL8031969

CC(C)(C)[SiH2]N[SiH3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6310944 0.67
SCHEMBL2270077 0.64
SCHEMBL1094498 0.61
SCHEMBL19275257 0.61
SCHEMBL1322396 0.56
SCHEMBL2531980 0.56
SCHEMBL707890 0.56
SCHEMBL647384 0.56
SCHEMBL22207749 0.53
Methane SCHEMBL4158420 0.53

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-118063409-A Preparation method of cefdinir and intermediate thereof 江苏美迪克化学品有限公司 2024-05-24 CN claimed
CN-113403604-B Composition and method for depositing silicon nitride films 弗萨姆材料美国有限责任公司 2024-06-14 CN disclosed
CN-118063409-A Preparation method of cefdinir and intermediate thereof 江苏美迪克化学品有限公司 2024-05-24 CN disclosed
US-6022814-A COATING A POLYSILOXANE/SILSESQUIOXANE ON THE SUBSTRATE; HEATING TO A TEMPERATURE RANGING FROM 250.DEGREE. C. TO THE GLASS TRANSITION POINT OF THE POLYMER; DIELECTRIC FILM OF LOW DENSITY AND A LARGE FREE VOLUME; HEAT RESISTANCE KABUSHIKI KAISHA TOSHIBA (JP) 2000-02-08 US disclosed