SCHEMBL823040

SCHEMBL823040

O=C1CCCC1S

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Cycloheptane SCHEMBL8877158 0.97 KMT2A (0.42)
SCHEMBL822956 0.92
SCHEMBL27851721 0.90 CA1 (0.34)
SCHEMBL4989703 0.89 KMT2A (0.52)
Methane SCHEMBL8878704 0.89
SCHEMBL112763 0.89 KMT2A (0.52)
Cyclohexane SCHEMBL8879285 0.89 KMT2A (0.52)
SCHEMBL822982 0.89
SCHEMBL11657362 0.89 KMT2A (0.52)
Cyclopentane SCHEMBL8879018 0.89 KMT2A (0.52)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 45 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20080131389-A1 Hair Relaxer SHOWA DENKO K.K. (JP) 2008-06-05 US claimed
EP-1845940-A1 HAIR RELAXER Showa Denko K.K. (JP) 2007-10-24 EP claimed
WO-2006083031-A1 HAIR RELAXER SHOWA DENKO K.K. (JP) 2006-08-10 WO claimed
US-20240226106-A1 INHIBITORS OF PLASMA KALLIKREIN SHIRE HUMAN GENETIC THERAPIES (US) 2024-07-11 US disclosed
CN-117616337-A Film forming material for semiconductor, member forming material for semiconductor, process member forming material for semiconductor, underlayer film forming material, underlayer film, and semiconductor device 株式会社艾迪科 2024-02-27 CN disclosed
CN-116490526-A Compounds and compositions 株式会社艾迪科 2023-07-25 CN disclosed
CN-104281006-B Radiation-ray sensitive composition 三菱瓦斯化学株式会社 2019-01-22 CN disclosed
CN-108693713-A Resist lower layer membrane material, pattern forming method and resist lower membrane forming method 信越化学工业株式会社 2018-10-23 CN disclosed
CN-108693705-A Resist lower layer membrane material, pattern forming method and resist lower membrane forming method 信越化学工业株式会社 2018-10-23 CN disclosed
CN-108008600-A Radiation-ray sensitive composition 三菱瓦斯化学株式会社 2018-05-08 CN disclosed
CN-107533297-A Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, and pattern formation method 三菱瓦斯化学株式会社 2018-01-02 CN disclosed
CN-102117013-A Photoresist composition SUMITOMO CHEMICAL CO 2011-07-06 CN disclosed
US-7968734-B2 Organocatalysts and methods of use in chemical synthesis STC.UNM (US) 2011-06-28 US disclosed
CN-101889247-A Composition for forming underlayer film for lithography and method for forming multilayer resist pattern MITSUBISHI GAS CHEMICAL CO 2010-11-17 CN disclosed
CN-101528653-A Radiation-sensitive composition MITSUBISHI GAS CHEMICAL CO (JP) 2009-09-09 CN disclosed
US-20080319206-A1 Process for Preparing Protected Amidines ASTRAZENECA AB (SE) 2008-12-25 US disclosed
CN-101258018-A Film forming composition for nanoimprinting and method for pattern formation TOKYO OHKA KOGYO CO LTD (JP) 2008-09-03 CN disclosed
US-20080131389-A1 Hair Relaxer SHOWA DENKO K.K. (JP) 2008-06-05 US disclosed
EP-1845940-A1 HAIR RELAXER Showa Denko K.K. (JP) 2007-10-24 EP disclosed
WO-2006083031-A1 HAIR RELAXER SHOWA DENKO K.K. (JP) 2006-08-10 WO disclosed