⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15279602 | 0.88 | — | — | |
| SCHEMBL10178619 | 0.85 | HMGCR (0.33) | — | |
| SCHEMBL18029787 | 0.83 | CHRM2 (0.30) | — | |
| SCHEMBL9916131 | 0.82 | ALDH1A1 (0.31) | — | |
| SCHEMBL2739880 | 0.82 | CHRM2 (0.32) | — | |
| SCHEMBL824287 | 0.81 | — | — | |
| SCHEMBL47416 | 0.78 | HMGCR (0.32) | — | |
| SCHEMBL13361040 | 0.78 | — | — | |
| SCHEMBL13385121 | 0.77 | ALDH1A1 (0.35) | — | |
| SCHEMBL16072435 | 0.77 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 163 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9105929-B2 | Negative electrode base member | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-08-11 | — | — | US | disclosed |
| US-9040220-B2 | Compound and method of producing the same, acid generator, resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-05-26 | — | — | US | disclosed |
| US-9034556-B2 | Compound and method of producing the same, acid generator, resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-05-19 | — | — | US | disclosed |
| US-8927147-B2 | Negative electrode base member | KANTO GAKUIN SCHOOL CORPORATION (JP) | 2015-01-06 | — | — | US | disclosed |
| US-8900788-B2 | Resist composition for immersion exposure and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-12-02 | — | — | US | disclosed |
| US-8742038-B2 | Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-06-03 | — | — | US | disclosed |
| US-20140127626-A1 | RESIST COMPOSITION FOR NEGATIVE DEVELOPMENT WHICH IS USED FOR FORMATION OF GUIDE PATTERN, GUIDE PATTERN FORMATION METHOD, AND METHOD FOR FORMING PATTERN ON LAYER CONTAINING BLOCK COPOLYMER | RIKEN (JP) | 2014-05-08 | — | — | US | disclosed |
| US-8642244-B2 | Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-02-04 | — | — | US | disclosed |
| US-8574813-B2 | Resist composition for immersion exposure and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-11-05 | — | — | US | disclosed |
| US-8551651-B2 | Secondary cell having negative electrode base member | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-10-08 | — | — | US | disclosed |
| US-20090004598-A1 | Resist Composition And Method For Forming Resist Pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-01-01 | — | — | US | disclosed |
| US-20080311522-A1 | Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-12-18 | — | — | US | disclosed |
| US-20080311515-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-12-18 | — | — | US | disclosed |
| US-20080311512-A1 | PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR PATTERN FORMING | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-12-18 | — | — | US | disclosed |
| US-20080292988-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD (JP) | 2008-11-27 | — | — | US | disclosed |
| US-20080268376-A1 | POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-10-30 | — | — | US | disclosed |
| US-20080248422-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080193871-A1 | Positive Resist Composition For Immersion Exposure and Method of Forming Resist Pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-08-14 | — | — | US | disclosed |
| US-20080090171-A1 | POSITIVE RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-04-17 | — | — | US | disclosed |
| US-20070231708-A1 | Polymer Compound, Acid Generator, Positive Resist Composition, and Method for Formation of Resist Patterns | TOKYO OHKA KOGYO CO., LTD. (JP) | 2007-10-04 | — | — | US | disclosed |