⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15214088 | 0.88 | — | — | |
| SCHEMBL824289 | 0.87 | — | — | |
| SCHEMBL824332 | 0.84 | — | — | |
| SCHEMBL824404 | 0.83 | LMNA (0.33) | — | |
| SCHEMBL15214083 | 0.81 | — | — | |
| SCHEMBL824290 | 0.80 | HTT (0.38) | — | |
| SCHEMBL2735051 | 0.78 | ABHD6 (0.32) | — | |
| SCHEMBL13146694 | 0.78 | — | — | |
| SCHEMBL13153210 | 0.78 | — | — | |
| SCHEMBL13180413 | 0.77 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8349534-B2 | Positive resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-01-08 | — | — | US | disclosed |
| US-8324331-B2 | Fluorine-containing compound and polymeric compound | DAITO CHEMIX CORPORATION (JP) | 2012-12-04 | — | — | US | disclosed |
| US-8142979-B2 | Resist composition for immersion exposure and method of forming resist pattern using the same | Tokyo Ohka Tokyo Co., Ltd. (JP) | 2012-03-27 | — | — | US | disclosed |
| US-20100233623-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-09-16 | — | — | US | disclosed |
| US-20100168358-A1 | FLUORINE-CONTAINING COMPOUND AND POLYMERIC COMPOUND | DAITO CHEMIX CORPORATION (JP) | 2010-07-01 | — | — | US | disclosed |
| US-20090311627-A1 | Resist composition for immersion exposure and method of forming resist pattern using the same | TOKYO OHKA KOGYO CO., LTD. | 2009-12-17 | — | — | US | disclosed |