⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4400977 | 0.84 | TSHR (0.31) | — | |
| SCHEMBL15959378 | 0.83 | — | — | |
| SCHEMBL19798272 | 0.82 | — | — | |
| SCHEMBL4903353 | 0.81 | HSD11B1 (0.31) | — | |
| SCHEMBL76410 | 0.81 | HCAR2 (0.39) | — | |
| SCHEMBL74928 | 0.81 | HCAR2 (0.39) | — | |
| SCHEMBL14982569 | 0.80 | SCN1A (0.32) | — | |
| SCHEMBL25509617 | 0.80 | HSD11B1 (0.34) | — | |
| SCHEMBL441423 | 0.80 | ALOX15 (0.40) | — | |
| SCHEMBL13564185 | 0.78 | HSD11B1 (0.31) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 307 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1546221-B1 | FLUORINATED POLYMERS HAVING POLYCYCLIC GROUPS WITH FUSED 4-MEMBERED HETEROCYCLIC RINGS, USEFUL AS PHOTORESISTS, AND PROCESSES FOR MICROLITHOGRAPHY | DU PONT (US) | 2010-03-10 | — | — | EP | claimed |
| US-7408011-B2 | Photoresists, fluoropolymers and processes for 157 nm microlithography | E.I. DU PONT DE NEMOURS AND COMPANY (US) | 2008-08-05 | — | — | US | claimed |
| EP-1546221-A4 | PHOTORESISTS, FLUORINATED POLYMERS AND PROCESSES FOR 157 nm MICROLITHOGRAPHY | DU PONT (US) | 2008-06-18 | — | — | EP | claimed |
| EP-1546222-A4 | PHOTORESISTS, FLUOROPOLYMERS AND PROCESSES FOR 157 NM MICROLITHOGRAPHY | DU PONT (US) | 2007-11-07 | — | — | EP | claimed |
| US-7264914-B2 | Fluorinated polymers having polycyclic groups with fused 4-membered carbocyclic rings, useful as photoresists, and processes for microlithography | E. I. DU PONT DE NEMOURS AND COMPANY (US) | 2007-09-04 | — | — | US | claimed |
| EP-1539690-A4 | FLUORINATED MONOMERS, FLUORINATED POLYMERS HAVING POLYCYCLIC GROUPS WITH FUSED 4-MEMBERED HETEROCYCLIC RINGS, USEFUL AS PHOTORESISTS, AND PROCESSES FOR MICROLITHOGRAPHY | DU PONT (US) | 2007-01-24 | — | — | EP | claimed |
| US-20060167284-A1 | Fluorinated monomers, fluorinated polymers having polycyclic groups with fused 4-membered heterocyclic rings, useful as photoresists, and processes for microlithography | E. I. DU PONT DE NEMOURS AND COMPANY | 2006-07-27 | — | — | US | claimed |
| US-7022457-B2 | Photoresists with hydroxylated, photoacid-cleavable groups | E. I. DU PONT DE NEMOURS AND COMPANY (US) | 2006-04-04 | — | — | US | claimed |
| US-20050277052-A1 | Fluorinated polymers having polycyclic groups with fused 4-membered carbocyclic rings, useful as photoresists, and processes for microlithography | E. I. DU PONT DE NEMOURS AND COMPANY | 2005-12-15 | — | — | US | claimed |
| US-20050239984-A1 | Photoresists, fluoropolymers and processes for 157 nm microlithography | E. I. DU PONT DE NEMOURS AND COMPANY | 2005-10-27 | — | — | US | claimed |
| EP-1546222-A1 | PHOTORESISTS, FLUOROPOLYMERS AND PROCESSES FOR 157 NM MICROLITHOGRAPHY | E. I. du Pont de Nemours and Company (US) | 2005-06-29 | — | — | EP | claimed |
| EP-1546221-A2 | PHOTORESISTS, FLUORINATED POLYMERS AND PROCESSES FOR 157 nm MICROLITHOGRAPHY | E. I. du Pont de Nemours and Company (US) | 2005-06-29 | — | — | EP | claimed |
| EP-1539690-A2 | FLUORINATED MONOMERS, FLUORINATED POLYMERS HAVING POLYCYCLIC GROUPS WITH FUSED 4-MEMBERED HETEROCYCLIC RINGS, USEFUL AS PHOTORESISTS, AND PROCESSES FOR MICROLITHOGRAPHY | E. I. du Pont de Nemours and Company (US) | 2005-06-15 | — | — | EP | claimed |
| US-20040126697-A1 | Photoresists with hydroxylated, photoacid-cleavable groups | E.I. DU PONT DE NEMOURS AND COMPANY | 2004-07-01 | — | — | US | claimed |
| EP-1411389-A1 | Photoresists with hydroxylated, photoacid-cleavable groups | E.I. du Pont de Nemours and Company (US) | 2004-04-21 | — | — | EP | claimed |
| WO-2004022612-A1 | PHOTORESISTS, FLUOROPOLYMERS AND PROCESSES FOR 157 NM MICROLITHOGRAPHY | E. I. DU PONT DE NEMOURS AND COMPANY (US) | 2004-03-18 | — | — | WO | claimed |
| WO-2004014960-A2 | FLUORINATED MONOMERS, FLUORINATED POLYMERS HAVING POLYCYCLIC GROUPS WITH FUSED 4-MEMBERED HETEROCYCLIC RINGS, USEFUL AS PHOTORESISTS, AND PROCESSES FOR MICROLITHOGRAPHY | E. I. DU PONT DE NEMOURS AND COMPANY (US) | 2004-02-19 | — | — | WO | claimed |
| WO-2004014964-A2 | PHOTORESISTS, FLUORINATED POLYMERS AND PROCESSES FOR 157 nm MICROLITHOGRAPHY | E. I. DU PONT DE NEMOURS AND COMPANY (US) | 2004-02-19 | — | — | WO | claimed |
| EP-0990666-B1 | Emulsion polymerised copolymers with cyclic or polycyclic monomers with higher glass transition temperature | CONSORTIUM ELEKTROCHEM IND (DE) | 2001-06-06 | — | — | EP | claimed |
| US-20230174471-A1 | ACETAL-BASED COMPOUND, ACETAL-BASED PREPOLYMER, ACETAL-BASED POLYMER, AND PHOTORESIST COMPOSITION COMPRISING THE SAME | INHA INDUSTRY PARTNERSHIP INSTITUTE (KR) | 2023-06-08 | — | — | US | disclosed |
| US-20230174471-A1 | ACETAL-BASED COMPOUND, ACETAL-BASED PREPOLYMER, ACETAL-BASED POLYMER, AND PHOTORESIST COMPOSITION COMPRISING THE SAME | INHA INDUSTRY PARTNERSHIP INSTITUTE (KR) | 2023-06-08 | — | — | US | disclosed |
| US-10191373-B2 | Method for producing polymer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-01-29 | — | — | US | disclosed |
| US-10007178-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-26 | — | — | US | disclosed |
| US-10005868-B2 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-26 | — | — | US | disclosed |
| US-10005868-B2 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-26 | — | — | US | disclosed |
| US-9927708-B2 | Pattern forming process and shrink agent | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-03-27 | — | — | US | disclosed |
| US-9927708-B2 | Pattern forming process and shrink agent | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-03-27 | — | — | US | disclosed |
| US-9910358-B2 | Patterning process and chemically amplified negative resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-03-06 | — | — | US | disclosed |
| US-9869931-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-01-16 | — | — | US | disclosed |
| US-9829792-B2 | Monomer, polymer, positive resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-11-28 | — | — | US | disclosed |
| US-20170242338-A1 | ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-08-24 | — | — | US | disclosed |
| US-20170242338-A1 | ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-08-24 | — | — | US | disclosed |
| US-20170176858-A1 | PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, RESIST COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2017-06-22 | — | — | US | disclosed |
| US-20170176858-A1 | PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, RESIST COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2017-06-22 | — | — | US | disclosed |
| US-9612535-B2 | Pattern forming method, electron beam- or extreme ultraviolet-sensitive resin composition, resist film using the same, method of manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2017-04-04 | — | — | US | disclosed |
| US-9612535-B2 | Pattern forming method, electron beam- or extreme ultraviolet-sensitive resin composition, resist film using the same, method of manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2017-04-04 | — | — | US | disclosed |
| US-9500951-B2 | Actinic ray-sensitive or radiation-sensitive composition, resist film using the same, pattern forming method, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2016-11-22 | — | — | US | disclosed |
| US-9500951-B2 | Actinic ray-sensitive or radiation-sensitive composition, resist film using the same, pattern forming method, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2016-11-22 | — | — | US | disclosed |
| US-9482949-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-11-01 | — | — | US | disclosed |
| US-9482949-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-11-01 | — | — | US | disclosed |
| US-9459531-B2 | — | — | 2016-10-04 | — | — | US | disclosed |
| US-9459531-B2 | — | — | 2016-10-04 | — | — | US | disclosed |
| US-9323150-B2 | Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern | FUJIFILM CORPORATION (JP) | 2016-04-26 | — | — | US | disclosed |
| US-9323150-B2 | Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern | FUJIFILM CORPORATION (JP) | 2016-04-26 | — | — | US | disclosed |
| US-9316908-B2 | Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film, photomask blank and method of forming pattern | FUJIFILM CORPORATION (JP) | 2016-04-19 | — | — | US | disclosed |
| US-9316908-B2 | Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film, photomask blank and method of forming pattern | FUJIFILM CORPORATION (JP) | 2016-04-19 | — | — | US | disclosed |
| US-9223215-B2 | Actinic ray-sensitive or radiation-sensitive composition, actinic ray-sensitive or radiation-sensitive film using the same, pattern forming method, manufacturing method of electronic device, electronic device and resin | FUJIFILM CORPORATION (JP) | 2015-12-29 | — | — | US | disclosed |
| US-20150370170-A1 | PATTERN FORMING METHOD, ELECTRON BEAM- OR EXTREME ULTRAVIOLET-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, METHOD OF MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-12-24 | — | — | US | disclosed |
| US-20150370170-A1 | PATTERN FORMING METHOD, ELECTRON BEAM- OR EXTREME ULTRAVIOLET-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, METHOD OF MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-12-24 | — | — | US | disclosed |
| US-9188862-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the same | FUJIFILM CORPORATION (JP) | 2015-11-17 | — | — | US | disclosed |
| US-9188862-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the same | FUJIFILM CORPORATION (JP) | 2015-11-17 | — | — | US | disclosed |
| US-9188865-B2 | Actinic ray-sensitive or radiation-sensitive composition, resist film using the same, pattern forming method, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2015-11-17 | — | — | US | disclosed |
| US-9188865-B2 | Actinic ray-sensitive or radiation-sensitive composition, resist film using the same, pattern forming method, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2015-11-17 | — | — | US | disclosed |
| US-20150293446-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-10-15 | — | — | US | disclosed |
| US-20150293446-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-10-15 | — | — | US | disclosed |
| EP-1489459-B1 | Positive resist composition and method of forming pattern using the same | FUJIFILM CORP (JP) | 2015-10-14 | — | — | EP | disclosed |
| US-20150284492-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-10-08 | — | — | US | disclosed |
| US-20150284492-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-10-08 | — | — | US | disclosed |
| US-20150212416-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-07-30 | — | — | US | disclosed |
| US-20150212416-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-07-30 | — | — | US | disclosed |
| US-9052603-B2 | Pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-06-09 | — | — | US | disclosed |
| EP-1780224-B1 | MULTIBRANCHED POLYMERS AND PROCESS FOR PRODUCTION THEREOF | NIPPON SODA CO (JP) | 2015-02-18 | — | — | EP | disclosed |
| US-20150010857-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-01-08 | — | — | US | disclosed |
| US-20150010857-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-01-08 | — | — | US | disclosed |
| US-20140370425-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM, PHOTOMASK BLANK AND METHOD OF FORMING PATTERN | FUJIFILM CORPORATION (JP) | 2014-12-18 | — | — | US | disclosed |
| US-20140370425-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM, PHOTOMASK BLANK AND METHOD OF FORMING PATTERN | FUJIFILM CORPORATION (JP) | 2014-12-18 | — | — | US | disclosed |
| US-8865389-B2 | Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern | FUJIFILM CORPORATION (JP) | 2014-10-21 | — | — | US | disclosed |
| US-8865389-B2 | Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern | FUJIFILM CORPORATION (JP) | 2014-10-21 | — | — | US | disclosed |
| US-20140295332-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD, EACH USING THE SAME | FUJIFILM CORPORATION (JP) | 2014-10-02 | — | — | US | disclosed |
| US-20140295332-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD, EACH USING THE SAME | FUJIFILM CORPORATION (JP) | 2014-10-02 | — | — | US | disclosed |
| US-20140272692-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM USING THE SAME, PATTERN FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND RESIN | FUJIFILM CORPORATION (JP) | 2014-09-18 | — | — | US | disclosed |
| US-20140272692-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM USING THE SAME, PATTERN FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND RESIN | FUJIFILM CORPORATION (JP) | 2014-09-18 | — | — | US | disclosed |
| US-20140234785-A1 | PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-08-21 | — | — | US | disclosed |
| US-20140227636-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN | FUJIFILM CORPORATION (JP) | 2014-08-14 | — | — | US | disclosed |
| US-20140227636-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN | FUJIFILM CORPORATION (JP) | 2014-08-14 | — | — | US | disclosed |
| EP-2296039-B1 | Positive photosensitive composition | FUJIFILM CORP (JP) | 2013-09-25 | — | — | EP | disclosed |
| WO-2013129702-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM, PHOTOMASK BLANK AND METHOD OF FORMING PATTERN | FUJIFILM CORPORATION (JP) | 2013-09-06 | — | — | WO | disclosed |
| WO-2013100158-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD, EACH USING THE SAME | FUJIFILM CORPORATION (JP) | 2013-07-04 | — | — | WO | disclosed |
| WO-2013081184-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM USING THE SAME, PATTERN FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND RESIN | FUJIFILM CORPORATION (JP) | 2013-06-06 | — | — | WO | disclosed |
| WO-2013047902-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN | FUJIFILM CORPORATION (JP) | 2013-04-04 | — | — | WO | disclosed |
| EP-1752479-B1 | ACRYLIC STAR POLYMER | NIPPON SODA CO (JP) | 2013-02-27 | — | — | EP | disclosed |
| US-8298746-B2 | Chemically amplified positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-10-30 | — | — | US | disclosed |
| US-8298746-B2 | Chemically amplified positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-10-30 | — | — | US | disclosed |
| EP-1975713-B1 | Positive resist composition and pattern forming method using the same | FUJIFILM CORP (JP) | 2012-08-29 | — | — | EP | disclosed |
| US-8241830-B2 | Positive resist composition and a pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2012-08-14 | — | — | US | disclosed |
| US-8241830-B2 | Positive resist composition and a pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2012-08-14 | — | — | US | disclosed |
| US-8193286-B2 | Acrylic star polymer | NIPPON SODA CO., LTD. (JP) | 2012-06-05 | — | — | US | disclosed |
| US-8193286-B2 | Acrylic star polymer | NIPPON SODA CO., LTD. (JP) | 2012-06-05 | — | — | US | disclosed |
| US-8182975-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2012-05-22 | — | — | US | disclosed |
| US-8182975-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2012-05-22 | — | — | US | disclosed |
| US-8173352-B2 | Resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-05-08 | — | — | US | disclosed |
| US-8173352-B2 | Resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-05-08 | — | — | US | disclosed |
| US-20120076997-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN | FUJIFILM CORPORATION (JP) | 2012-03-29 | — | — | US | disclosed |
| US-20120076997-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN | FUJIFILM CORPORATION (JP) | 2012-03-29 | — | — | US | disclosed |
| US-8142977-B2 | mixture of resin which decomposes under acid under exposure to actinic radiation, acid generator | FUJIFILM CORPORATION (JP) | 2012-03-27 | — | — | US | disclosed |
| US-8124310-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2012-02-28 | — | — | US | disclosed |
| US-8124310-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2012-02-28 | — | — | US | disclosed |
| US-8092977-B2 | additional resin contains an oxime sulfonate group, which is insoluble in an alkali developer and becomes soluble in alkali developer by acid generating from acid generator; use in ultramicrolithography; resolution, sensitivity, good defocus latitude, good pattern profile, line edge roughness | FUJIFILM CORPORATION (JP) | 2012-01-10 | — | — | US | disclosed |
| US-8092977-B2 | additional resin contains an oxime sulfonate group, which is insoluble in an alkali developer and becomes soluble in alkali developer by acid generating from acid generator; use in ultramicrolithography; resolution, sensitivity, good defocus latitude, good pattern profile, line edge roughness | FUJIFILM CORPORATION (JP) | 2012-01-10 | — | — | US | disclosed |
| US-20120003590-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-01-05 | — | — | US | disclosed |
| US-20120003590-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-01-05 | — | — | US | disclosed |
| US-8067515-B2 | Method of producing an acrylic acid-based polymer | NIPPON SODA CO., LTD. (JP) | 2011-11-29 | — | — | US | disclosed |
| US-8062830-B2 | Chemically amplified positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-11-22 | — | — | US | disclosed |
| US-8062830-B2 | Chemically amplified positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-11-22 | — | — | US | disclosed |
| US-8062829-B2 | Chemically amplified resist composition and chemically amplified resist composition for immersion lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-11-22 | — | — | US | disclosed |
| US-8062829-B2 | Chemically amplified resist composition and chemically amplified resist composition for immersion lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-11-22 | — | — | US | disclosed |
| US-8057983-B2 | liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-11-15 | — | — | US | disclosed |
| US-8057983-B2 | liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-11-15 | — | — | US | disclosed |
| US-8048612-B2 | Polymer and chemically amplified resist composition comprising the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-11-01 | — | — | US | disclosed |
| US-8048612-B2 | Polymer and chemically amplified resist composition comprising the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-11-01 | — | — | US | disclosed |
| EP-1078945-B1 | Polymer for use in a photoresist composition | SAMSUNG ELECTRONICS CO LTD (KR) | 2011-10-12 | — | — | EP | disclosed |
| US-8030419-B2 | Process for producing polymer for semiconductor lithography | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2011-10-04 | — | — | US | disclosed |
| US-8030419-B2 | Process for producing polymer for semiconductor lithography | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2011-10-04 | — | — | US | disclosed |
| US-8003296-B2 | Chemically amplified positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-08-23 | — | — | US | disclosed |
| US-8003296-B2 | Chemically amplified positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-08-23 | — | — | US | disclosed |
| US-7998656-B2 | Chemically amplified positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-08-16 | — | — | US | disclosed |
| US-7998656-B2 | Chemically amplified positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-08-16 | — | — | US | disclosed |
| US-7981985-B2 | Polymer and chemically amplified resist composition comprising the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-07-19 | — | — | US | disclosed |
| US-7981985-B2 | Polymer and chemically amplified resist composition comprising the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-07-19 | — | — | US | disclosed |
| US-7977029-B2 | Positive photosensitive composition | FUJIFILM CORPORATION (JP) | 2011-07-12 | — | — | US | disclosed |
| US-7977029-B2 | Positive photosensitive composition | FUJIFILM CORPORATION (JP) | 2011-07-12 | — | — | US | disclosed |
| US-20110152388-A1 | Multibranched polymer and method for producing the same | NIPPON SODA CO., LTD. (JP) | 2011-06-23 | — | — | US | disclosed |
| US-20110152388-A1 | Multibranched polymer and method for producing the same | NIPPON SODA CO., LTD. (JP) | 2011-06-23 | — | — | US | disclosed |
| US-20110098413-A1 | Acrylic star polymer | NIPPON SODA CO., LTD (JP) | 2011-04-28 | — | — | US | disclosed |
| US-20110098413-A1 | Acrylic star polymer | NIPPON SODA CO., LTD (JP) | 2011-04-28 | — | — | US | disclosed |
| US-7919570-B2 | narrowly dispersed; controlled molecular weight; ionic conductivity, shape stability; battery adhesive or binder; 1,1,2,2-tetrakis(4-hydroxyphenyl)ethane or pentaerythritol reacted with bromoisobutyroyl bromide for core; living radical polymerization of acrylate or a styrene at halogen atoms as the arms | NIPPON SODA CO., LTD. (JP) | 2011-04-05 | — | — | US | disclosed |
| US-7919570-B2 | narrowly dispersed; controlled molecular weight; ionic conductivity, shape stability; battery adhesive or binder; 1,1,2,2-tetrakis(4-hydroxyphenyl)ethane or pentaerythritol reacted with bromoisobutyroyl bromide for core; living radical polymerization of acrylate or a styrene at halogen atoms as the arms | NIPPON SODA CO., LTD. (JP) | 2011-04-05 | — | — | US | disclosed |
| US-20110054133-A1 | RESIST POLYMER, PREPARING METHOD, RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-03-03 | — | — | US | disclosed |
| US-20110054133-A1 | RESIST POLYMER, PREPARING METHOD, RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-03-03 | — | — | US | disclosed |
| US-20110046333-A1 | ACRYLIC ACID-BASED POLYMER AND METHOD OF PRODUCING THE SAME | NIPPON SODA CO., LTD. (JP) | 2011-02-24 | — | — | US | disclosed |
| US-7887988-B2 | Acid generator; irradiating with actinic radiation | FUJIFILM CORPORATION (JP) | 2011-02-15 | — | — | US | disclosed |
| US-7887988-B2 | Acid generator; irradiating with actinic radiation | FUJIFILM CORPORATION (JP) | 2011-02-15 | — | — | US | disclosed |
| US-7847045-B2 | Acrylic acid-based polymer and method of producing the same | NIPPON SODA CO., LTD. (JP) | 2010-12-07 | — | — | US | disclosed |
| US-7847045-B2 | Acrylic acid-based polymer and method of producing the same | NIPPON SODA CO., LTD. (JP) | 2010-12-07 | — | — | US | disclosed |
| US-7799506-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2010-09-21 | — | — | US | disclosed |
| US-7799506-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2010-09-21 | — | — | US | disclosed |
| US-7794914-B2 | liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-09-14 | — | — | US | disclosed |
| US-7794914-B2 | liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-09-14 | — | — | US | disclosed |
| US-20100210805-A1 | METHOD FOR PRODUCING STAR POLYMER | NIPPON SODA CO., LTD. (JP) | 2010-08-19 | — | — | US | disclosed |
| US-20100210805-A1 | METHOD FOR PRODUCING STAR POLYMER | NIPPON SODA CO., LTD. (JP) | 2010-08-19 | — | — | US | disclosed |
| US-7749678-B2 | contains sulfonium compound; improved line edge roughness and pattern profile, and contrast of sensitivity and dissolution in extreme ultraviolet exposure | FUJIFILM CORPORATION (JP) | 2010-07-06 | — | — | US | disclosed |
| US-7749678-B2 | contains sulfonium compound; improved line edge roughness and pattern profile, and contrast of sensitivity and dissolution in extreme ultraviolet exposure | FUJIFILM CORPORATION (JP) | 2010-07-06 | — | — | US | disclosed |
| US-20100167199-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-07-01 | — | — | US | disclosed |
| US-20100167199-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-07-01 | — | — | US | disclosed |
| US-20100151380-A1 | RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-06-17 | — | — | US | disclosed |
| US-20100151380-A1 | RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-06-17 | — | — | US | disclosed |
| US-20100136481-A1 | RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-06-03 | — | — | US | disclosed |
| US-20100136481-A1 | RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-06-03 | — | — | US | disclosed |
| EP-2186838-A1 | METHOD FOR PRODUCING STAR POLYMER | Nippon Soda Co., Ltd. (JP) | 2010-05-19 | — | — | EP | disclosed |
| EP-1296190-B1 | Positive resist composition | FUJIFILM CORP (JP) | 2010-05-05 | — | — | EP | disclosed |
| US-7695889-B2 | Copolymer for semiconductor lithography and process for production thereof | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2010-04-13 | — | — | US | disclosed |
| US-7695889-B2 | Copolymer for semiconductor lithography and process for production thereof | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2010-04-13 | — | — | US | disclosed |
| US-20100062365-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-03-11 | — | — | US | disclosed |
| US-20100062365-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-03-11 | — | — | US | disclosed |
| EP-1546221-B1 | FLUORINATED POLYMERS HAVING POLYCYCLIC GROUPS WITH FUSED 4-MEMBERED HETEROCYCLIC RINGS, USEFUL AS PHOTORESISTS, AND PROCESSES FOR MICROLITHOGRAPHY | DU PONT (US) | 2010-03-10 | — | — | EP | disclosed |
| US-20100048848-A1 | PROCESS FOR PRODUCING POLYMER FOR SEMICONDUCTOR LITHOGRAPHY | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2010-02-25 | — | — | US | disclosed |
| US-20100048848-A1 | PROCESS FOR PRODUCING POLYMER FOR SEMICONDUCTOR LITHOGRAPHY | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2010-02-25 | — | — | US | disclosed |
| US-20100035180-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-02-11 | — | — | US | disclosed |
| US-20100035180-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-02-11 | — | — | US | disclosed |
| US-20100010129-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| US-20100010129-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| US-20090317744-A1 | POLYMER AND CHEMICALLY AMPLIFIED RESIST COMPOSITION COMPRISING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-12-24 | — | — | US | disclosed |
| US-20090317744-A1 | POLYMER AND CHEMICALLY AMPLIFIED RESIST COMPOSITION COMPRISING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-12-24 | — | — | US | disclosed |
| US-7625690-B2 | Acid generator; exposure to actinic radiation | FUJIFILM CORPORATION (JP) | 2009-12-01 | — | — | US | disclosed |
| US-7625690-B2 | Acid generator; exposure to actinic radiation | FUJIFILM CORPORATION (JP) | 2009-12-01 | — | — | US | disclosed |
| US-20090286937-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-11-19 | — | — | US | disclosed |
| US-20090286937-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-11-19 | — | — | US | disclosed |
| US-20090269695-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-10-29 | — | — | US | disclosed |
| US-20090269695-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-10-29 | — | — | US | disclosed |
| US-20090264565-A1 | POLYMER AND CHEMICALLY AMPLIFIED RESIST COMPOSITION COMPRISING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-10-22 | — | — | US | disclosed |
| US-20090264565-A1 | POLYMER AND CHEMICALLY AMPLIFIED RESIST COMPOSITION COMPRISING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-10-22 | — | — | US | disclosed |
| US-20090263742-A1 | liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-10-22 | — | — | US | disclosed |
| US-20090263742-A1 | liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-10-22 | — | — | US | disclosed |
| US-7592118-B2 | Addition polymer ; insoluble in alkali developer ; acid generator; microlithography, resolution sensitivity, accuracy pattern profile | FUJIFILM CORPORATION (JP) | 2009-09-22 | — | — | US | disclosed |
| US-20090220890-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND CHEMICALLY AMPLIFIED RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-09-03 | — | — | US | disclosed |
| US-20090220890-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND CHEMICALLY AMPLIFIED RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-09-03 | — | — | US | disclosed |
| US-20090209726-A1 | ACRYLIC STAR POLYMER | NIPPON SODA CO., LTD. (JP) | 2009-08-20 | — | — | US | disclosed |
| US-20090209726-A1 | ACRYLIC STAR POLYMER | NIPPON SODA CO., LTD. (JP) | 2009-08-20 | — | — | US | disclosed |
| US-7575850-B2 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-08-18 | — | — | US | disclosed |
| US-7575850-B2 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-08-18 | — | — | US | disclosed |
| US-7572570-B2 | Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-08-11 | — | — | US | disclosed |
| US-7572570-B2 | Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-08-11 | — | — | US | disclosed |
| US-7566522-B2 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-07-28 | — | — | US | disclosed |
| US-7566522-B2 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-07-28 | — | — | US | disclosed |
| EP-1835341-B1 | Positive resist composition and pattern forming method using the same | FUJIFILM CORP (JP) | 2009-06-24 | — | — | EP | disclosed |
| US-20090111961-A1 | Acrylic Acid-Based Polymer and Method of Producing the Same | NIPPON SODA CO., LTD. (JP) | 2009-04-30 | — | — | US | disclosed |
| US-20090111961-A1 | Acrylic Acid-Based Polymer and Method of Producing the Same | NIPPON SODA CO., LTD. (JP) | 2009-04-30 | — | — | US | disclosed |
| US-7514201-B2 | Positive photosensitive composition | FUJIFILM CORPORATION (JP) | 2009-04-07 | — | — | US | disclosed |
| US-7514201-B2 | Positive photosensitive composition | FUJIFILM CORPORATION (JP) | 2009-04-07 | — | — | US | disclosed |
| US-20090087784-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-04-02 | — | — | US | disclosed |
| US-20090087784-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-04-02 | — | — | US | disclosed |
| US-20090087776-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-04-02 | — | — | US | disclosed |
| US-20090087776-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-04-02 | — | — | US | disclosed |
| US-7507522-B2 | Photoresists comprising polymers derived from fluoroalcohol-substituted polycyclic monomers | E. I. DUPONT DE NEMOURS AND COMPANY (US) | 2009-03-24 | — | — | US | disclosed |
| US-7494759-B2 | Positive resist compositions and process for the formation of resist patterns with the same | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-02-24 | — | — | US | disclosed |
| US-7494759-B2 | Positive resist compositions and process for the formation of resist patterns with the same | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-02-24 | — | — | US | disclosed |
| US-20080318159-A1 | POSITIVE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2008-12-25 | — | — | US | disclosed |
| US-20080318159-A1 | POSITIVE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2008-12-25 | — | — | US | disclosed |
| US-7452655-B2 | Acrylic copolymer and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2008-11-18 | — | — | US | disclosed |
| US-20080274426-A1 | Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-11-06 | — | — | US | disclosed |
| US-20080274426-A1 | Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-11-06 | — | — | US | disclosed |
| US-7435527-B2 | Mixture of acid generator and resin insoluble in alkaline developer and another acid decomposable compound | FUJIFILM CORPORATION (JP) | 2008-10-14 | — | — | US | disclosed |
| US-20080248419-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080248419-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080241749-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-10-02 | — | — | US | disclosed |
| US-20080241743-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-10-02 | — | — | US | disclosed |
| US-20080241752-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-10-02 | — | — | US | disclosed |
| US-20080241752-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-10-02 | — | — | US | disclosed |
| EP-1975717-A2 | Positive resist compostion and pattern forming method using the same | FUJIFILM Corporation (JP) | 2008-10-01 | — | — | EP | disclosed |
| EP-1975715-A2 | Positive resist composition and pattern forming method using the same | FUJIFILM Corporation (JP) | 2008-10-01 | — | — | EP | disclosed |
| EP-1975712-A2 | Positive resist composition and pattern forming method using the same | FUJIFILM Corporation (JP) | 2008-10-01 | — | — | EP | disclosed |
| EP-1975713-A2 | Positive resist composition and pattern forming method using the same | FUJIFILM Corporation (JP) | 2008-10-01 | — | — | EP | disclosed |
| US-20080220370-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-09-11 | — | — | US | disclosed |
| US-20080220370-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-09-11 | — | — | US | disclosed |
| EP-1967904-A1 | Positive resist composition and pattern forming method using the same | FUJIFILM Corporation (JP) | 2008-09-10 | — | — | EP | disclosed |
| US-20080214685-A1 | Multibrached Polymer and Method for Producing the Same | NIPPON SODA CO., LTD. (JP) | 2008-09-04 | — | — | US | disclosed |
| US-20080214685-A1 | Multibrached Polymer and Method for Producing the Same | NIPPON SODA CO., LTD. (JP) | 2008-09-04 | — | — | US | disclosed |
| US-20080199814-A1 | Device manufacturing process utilizing a double patterning process | FUJIFILM ELECTRONIC MATERIALS, U.S.A., INC. | 2008-08-21 | — | — | US | disclosed |
| US-20080199814-A1 | Device manufacturing process utilizing a double patterning process | FUJIFILM ELECTRONIC MATERIALS, U.S.A., INC. | 2008-08-21 | — | — | US | disclosed |
| US-20080193874-A1 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-08-14 | — | — | US | disclosed |
| US-20080193874-A1 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-08-14 | — | — | US | disclosed |
| US-7408011-B2 | Photoresists, fluoropolymers and processes for 157 nm microlithography | E.I. DU PONT DE NEMOURS AND COMPANY (US) | 2008-08-05 | — | — | US | disclosed |
| US-20080166660-A1 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-07-10 | — | — | US | disclosed |
| US-20080166660-A1 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-07-10 | — | — | US | disclosed |
| EP-1546221-A4 | PHOTORESISTS, FLUORINATED POLYMERS AND PROCESSES FOR 157 nm MICROLITHOGRAPHY | DU PONT (US) | 2008-06-18 | — | — | EP | disclosed |
| US-20080096134-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-04-24 | — | — | US | disclosed |
| US-20080096134-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-04-24 | — | — | US | disclosed |
| US-20080081289-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |
| US-20080081289-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |
| EP-1906239-A2 | Positive resist composition and pattern forming method using the same | FUJIFILM Corporation (JP) | 2008-04-02 | — | — | EP | disclosed |
| US-7344821-B2 | Positive resist composition for use with electron beam, EUV light or X ray, and pattern formation method using the same | FUJIFILM CORPORATION (JP) | 2008-03-18 | — | — | US | disclosed |
| US-7344821-B2 | Positive resist composition for use with electron beam, EUV light or X ray, and pattern formation method using the same | FUJIFILM CORPORATION (JP) | 2008-03-18 | — | — | US | disclosed |
| US-7338740-B2 | Positive resist composition | FUJIFILM CORPORATION (JP) | 2008-03-04 | — | — | US | disclosed |
| US-7338740-B2 | Positive resist composition | FUJIFILM CORPORATION (JP) | 2008-03-04 | — | — | US | disclosed |
| US-20080050675-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-02-28 | — | — | US | disclosed |
| US-20080050675-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-02-28 | — | — | US | disclosed |
| EP-1892575-A1 | Positive resist composition and pattern forming method using the same | FUJIFILM Corporation (JP) | 2008-02-27 | — | — | EP | disclosed |
| US-7326796-B2 | Fluorinated monomers, fluorinated polymers having polycyclic groups with fused 4-membered heterocyclic rings, useful as photoresists, and processes for microlithography | E.I. DU PONT DE NEMOURS AND COMPANY (US) | 2008-02-05 | — | — | US | disclosed |
| US-20070264592-A1 | Resist polymer, preparing method, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-11-15 | — | — | US | disclosed |
| US-20070264592-A1 | Resist polymer, preparing method, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-11-15 | — | — | US | disclosed |
| EP-1546222-A4 | PHOTORESISTS, FLUOROPOLYMERS AND PROCESSES FOR 157 NM MICROLITHOGRAPHY | DU PONT (US) | 2007-11-07 | — | — | EP | disclosed |
| US-7291441-B2 | Positive resist composition and pattern forming method utilizing the same | FUJIFILM CORPORATION (JP) | 2007-11-06 | — | — | US | disclosed |
| US-7291441-B2 | Positive resist composition and pattern forming method utilizing the same | FUJIFILM CORPORATION (JP) | 2007-11-06 | — | — | US | disclosed |
| US-7285369-B2 | photoresist composition comprising resins that increases solubility in alkali developing solution by the action of an acid and photoacid generators, which exhibits high sensitivity, high resolution and stability | FUJIFILM CORPORATION (JP) | 2007-10-23 | — | — | US | disclosed |
| US-7285369-B2 | photoresist composition comprising resins that increases solubility in alkali developing solution by the action of an acid and photoacid generators, which exhibits high sensitivity, high resolution and stability | FUJIFILM CORPORATION (JP) | 2007-10-23 | — | — | US | disclosed |
| US-7279265-B2 | Positive resist composition and pattern formation method using the same | FUJIFILM CORPORATION (JP) | 2007-10-09 | — | — | US | disclosed |
| US-7279265-B2 | Positive resist composition and pattern formation method using the same | FUJIFILM CORPORATION (JP) | 2007-10-09 | — | — | US | disclosed |
| US-20070224538-A1 | Positive Resist Compositions and Process for the Formation of Resist Patterns With the Same | TOKYO OHKA KOGYO CO., LTD. (JP) | 2007-09-27 | — | — | US | disclosed |
| US-20070224538-A1 | Positive Resist Compositions and Process for the Formation of Resist Patterns With the Same | TOKYO OHKA KOGYO CO., LTD. (JP) | 2007-09-27 | — | — | US | disclosed |
| US-20070218406-A1 | Acid generator; exposure to actinic radiation | FUJIFILM CORPORATION (JP) | 2007-09-20 | — | — | US | disclosed |
| US-20070218406-A1 | Acid generator; exposure to actinic radiation | FUJIFILM CORPORATION (JP) | 2007-09-20 | — | — | US | disclosed |
| US-20070218401-A1 | liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-09-20 | — | — | US | disclosed |
| US-20070218401-A1 | liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-09-20 | — | — | US | disclosed |
| US-20070218407-A1 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2007-09-20 | — | — | US | disclosed |
| US-20070218407-A1 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2007-09-20 | — | — | US | disclosed |
| EP-1835341-A1 | Positive resist composition and pattern forming method using the same | FUJIFILM Corporation (JP) | 2007-09-19 | — | — | EP | disclosed |
| EP-1835342-A2 | Positive resist composition and pattern forming method using the same | FUJIFILM Corporation (JP) | 2007-09-19 | — | — | EP | disclosed |
| US-20070207413-A1 | Photoroesists Comprising Polymers Derived From Fluoroalcohol-Substituted Polycyclic Monomers | DUPONT ELECTRONICS, INC. | 2007-09-06 | — | — | US | disclosed |
| US-7264914-B2 | Fluorinated polymers having polycyclic groups with fused 4-membered carbocyclic rings, useful as photoresists, and processes for microlithography | E. I. DU PONT DE NEMOURS AND COMPANY (US) | 2007-09-04 | — | — | US | disclosed |
| US-7255971-B2 | Positive resist composition | FUJIFILM CORPORATION (JP) | 2007-08-14 | — | — | US | disclosed |
| US-7255971-B2 | Positive resist composition | FUJIFILM CORPORATION (JP) | 2007-08-14 | — | — | US | disclosed |
| US-7252924-B2 | Positive resist composition and method of pattern formation using the same | FUJIFILM CORPORATION (JP) | 2007-08-07 | — | — | US | disclosed |
| US-7252924-B2 | Positive resist composition and method of pattern formation using the same | FUJIFILM CORPORATION (JP) | 2007-08-07 | — | — | US | disclosed |
| US-7241551-B2 | Positive-working resist composition | FUJIFILM CORPORATION (JP) | 2007-07-10 | — | — | US | disclosed |
| US-7241551-B2 | Positive-working resist composition | FUJIFILM CORPORATION (JP) | 2007-07-10 | — | — | US | disclosed |
| US-7235341-B2 | Positive resist composition | FUJIFILM CORPORATION (JP) | 2007-06-26 | — | — | US | disclosed |
| US-7235341-B2 | Positive resist composition | FUJIFILM CORPORATION (JP) | 2007-06-26 | — | — | US | disclosed |
| US-20070141513-A1 | Positive photosensitive composition | FUJI PHOTO FILM CO., LTD. | 2007-06-21 | — | — | US | disclosed |
| US-20070141513-A1 | Positive photosensitive composition | FUJI PHOTO FILM CO., LTD. | 2007-06-21 | — | — | US | disclosed |
| US-7214465-B2 | Positive photosensitive composition | FUJIFILM CORPORATION (JP) | 2007-05-08 | — | — | US | disclosed |
| US-7214465-B2 | Positive photosensitive composition | FUJIFILM CORPORATION (JP) | 2007-05-08 | — | — | US | disclosed |
| US-7214733-B2 | Positive type resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-05-08 | — | — | US | disclosed |
| US-7214733-B2 | Positive type resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-05-08 | — | — | US | disclosed |
| EP-1780224-A1 | MULTIBRANCHED POLYMERS AND PROCESS FOR PRODUCTION THEREOF | NIPPON SODA CO., LTD. (JP) | 2007-05-02 | — | — | EP | disclosed |
| US-7195856-B2 | Positive resist composition and pattern formation method using the same | FUJIFILM CORPORATION (JP) | 2007-03-27 | — | — | US | disclosed |
| US-7195856-B2 | Positive resist composition and pattern formation method using the same | FUJIFILM CORPORATION (JP) | 2007-03-27 | — | — | US | disclosed |
| US-7192681-B2 | Positive photosensitive composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-03-20 | — | — | US | disclosed |
| US-7192681-B2 | Positive photosensitive composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-03-20 | — | — | US | disclosed |
| US-7189492-B2 | Photosensitive composition and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2007-03-13 | — | — | US | disclosed |
| US-7189492-B2 | Photosensitive composition and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2007-03-13 | — | — | US | disclosed |
| US-20070042291-A1 | Positive resist composition and a pattern forming method using the same | FUJI PHOTO FILM CO., LTD. | 2007-02-22 | — | — | US | disclosed |
| US-20070042291-A1 | Positive resist composition and a pattern forming method using the same | FUJI PHOTO FILM CO., LTD. | 2007-02-22 | — | — | US | disclosed |
| EP-1755000-A2 | Positive resist composition and a pattern forming method using the same | Fuji Photo Film Co., Ltd. (JP) | 2007-02-21 | — | — | EP | disclosed |
| US-7179578-B2 | Positive resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-02-20 | — | — | US | disclosed |
| US-7179578-B2 | Positive resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-02-20 | — | — | US | disclosed |
| US-7179579-B2 | Radiation-sensitive composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-02-20 | — | — | US | disclosed |
| US-7179579-B2 | Radiation-sensitive composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-02-20 | — | — | US | disclosed |
| EP-1752479-A1 | ACRYLIC STAR POLYMER | NIPPON SODA CO., LTD. (JP) | 2007-02-14 | — | — | EP | disclosed |
| US-20060167284-A1 | Fluorinated monomers, fluorinated polymers having polycyclic groups with fused 4-membered heterocyclic rings, useful as photoresists, and processes for microlithography | E. I. DU PONT DE NEMOURS AND COMPANY | 2006-07-27 | — | — | US | disclosed |
| US-20060074139-A1 | Acrylic copolymer and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2006-04-06 | — | — | US | disclosed |
| US-7022457-B2 | Photoresists with hydroxylated, photoacid-cleavable groups | E. I. DU PONT DE NEMOURS AND COMPANY (US) | 2006-04-04 | — | — | US | disclosed |
| WO-2005118656-A2 | PHOTORESISTS COMPRISING POLYMERS DERIVED FROM FLUOROALCOHOL-SUBSTITUTED POLYCYCLIC MONOMERS | E.I. DUPONT DE NEMOURS AND COMPANY (US) | 2005-12-15 | — | — | WO | disclosed |
| US-20050277052-A1 | Fluorinated polymers having polycyclic groups with fused 4-membered carbocyclic rings, useful as photoresists, and processes for microlithography | E. I. DU PONT DE NEMOURS AND COMPANY | 2005-12-15 | — | — | US | disclosed |
| US-6964839-B1 | Photosensitive polymer having cyclic backbone and resist composition containing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2005-11-15 | — | — | US | disclosed |
| US-20050239984-A1 | Photoresists, fluoropolymers and processes for 157 nm microlithography | E. I. DU PONT DE NEMOURS AND COMPANY | 2005-10-27 | — | — | US | disclosed |
| EP-1586594-A1 | ACRYLIC COPOLYMER AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2005-10-19 | — | — | EP | disclosed |
| EP-1546221-A2 | PHOTORESISTS, FLUORINATED POLYMERS AND PROCESSES FOR 157 nm MICROLITHOGRAPHY | E. I. du Pont de Nemours and Company (US) | 2005-06-29 | — | — | EP | disclosed |
| EP-1546222-A1 | PHOTORESISTS, FLUOROPOLYMERS AND PROCESSES FOR 157 NM MICROLITHOGRAPHY | E. I. du Pont de Nemours and Company (US) | 2005-06-29 | — | — | EP | disclosed |
| US-6875555-B1 | Preparation and use of EXO-2-fluoroalkyl(bicyclo[2.2.1] hept-5-enes) | E.I. DU PONT DE NEMOURS AND COMPANY (US) | 2005-04-05 | — | — | US | disclosed |
| US-20050058932-A1 | PREPARATION AND USE OF EXO-2-FLUOROALKYL(BICYCLO[2.2.1] HEPT-5-ENES) | E. I. DU PONT DE NEMOURS AND COMPANY | 2005-03-17 | — | — | US | disclosed |
| US-20040126697-A1 | Photoresists with hydroxylated, photoacid-cleavable groups | E.I. DU PONT DE NEMOURS AND COMPANY | 2004-07-01 | — | — | US | disclosed |
| EP-1411389-A1 | Photoresists with hydroxylated, photoacid-cleavable groups | E.I. du Pont de Nemours and Company (US) | 2004-04-21 | — | — | EP | disclosed |
| WO-2004022612-A1 | PHOTORESISTS, FLUOROPOLYMERS AND PROCESSES FOR 157 NM MICROLITHOGRAPHY | E. I. DU PONT DE NEMOURS AND COMPANY (US) | 2004-03-18 | — | — | WO | disclosed |
| WO-2004014964-A2 | PHOTORESISTS, FLUORINATED POLYMERS AND PROCESSES FOR 157 nm MICROLITHOGRAPHY | E. I. DU PONT DE NEMOURS AND COMPANY (US) | 2004-02-19 | — | — | WO | disclosed |
| US-6677419-B1 | REACTING STOICHIOMETRIC EXCESS OF UNSATURATED ALICYCLIC MONOMER WITH ANOTHER UNSATURATED MONOMER, HAVING LESS THAN TWO ELECTRON-WITHDRAWING GROUPS APPENDED TO UNSATURATION, IN PRESENCE OF FREE RADICAL INITIATOR | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2004-01-13 | — | — | US | disclosed |
| US-6642336-B1 | Ultraviolet radiation transparent; improved adhesion, contrast and dry etch resistance | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2003-11-04 | — | — | US | disclosed |
| EP-1078945-A2 | Polymer for use in a photoresist composition | SAMSUNG ELECTRONICS CO. LTD. (KR) | 2001-02-28 | — | — | EP | disclosed |
| EP-1078945-A2 | Polymer for use in a photoresist composition | SAMSUNG ELECTRONICS CO. LTD. (KR) | 2001-02-28 | — | — | EP | disclosed |