SCHEMBL825432

SCHEMBL825432

CCC(C)C(=O)Oc1ccccc1-c1ccccc1

nearest known ligand 0.51

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 9/20 0.51
PKM P14618 1/20 0.51
KMT2A Q03164 3/20 0.47
MEN1 O00255 2/20 0.47
LMNA P02545 3/20 0.47
MAPK1 P28482 3/20 0.47
HTT P42858 2/20 0.47
USP2 O75604 1/20 0.47
MAPT P10636 1/20 0.47
ALDH1A1 P00352 4/20 0.46
TDP1 Q9NUW8 3/20 0.45
L3MBTL1 Q9Y468 3/20 0.45
SMN1; SMN2 Q16637 2/20 0.45
FABP3 P05413 2/20 0.44
FABP7 O15540 1/20 0.44
FABP5 Q01469 1/20 0.44
ADRB2 P07550 1/20 0.43
RXRA P19793 1/20 0.42
RXRB P28702 1/20 0.42
RXRG P48443 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28779295 0.85 KDM4E (0.49) KDM4EPKMKMT2AMEN1LMNA
SCHEMBL15548526 0.85 KMT2A (0.49) KDM4EKMT2AMEN1MAPTALDH1A1
SCHEMBL14827288 0.84 BACE1 (0.43) KDM4EPKMKMT2AMEN1LMNA
SCHEMBL23518659 0.83 FABP3 (0.49) KDM4EPKMKMT2AMEN1LMNA
SCHEMBL14827298 0.82 KDM4E (0.60) KDM4EPKMKMT2AMEN1LMNA
SCHEMBL2058257 0.80 KDM4E (0.53) KDM4EPKMKMT2AMEN1LMNA
SCHEMBL17720809 0.79 KDM4E (0.49) KDM4EPKMKMT2AMEN1LMNA
SCHEMBL4085152 0.79 KMT2A (0.49) KDM4EKMT2AMEN1LMNAMAPT
SCHEMBL15547890 0.79 ALOX15 (0.47) KDM4EKMT2AMEN1MAPTALDH1A1
SCHEMBL4090840 0.79 TDP1 (0.48) KDM4EKMT2AHTTALDH1A1TDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 49 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9915870-B2 Pattern forming method, composition kit and resist film, and method for producing electronic device using them, and electronic device FUJIFILM CORPORATION (JP) 2018-03-13 US disclosed
US-9904168-B2 Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blank provided with actinic ray-sensitive or radiation-sensitive film, pattern forming method, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2018-02-27 US disclosed
US-9651863-B2 Pattern forming method, active light sensitive or radiation sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2017-05-16 US disclosed
US-9632410-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, resist-coated mask blank, photomask and pattern forming method, and method for producing electronic device using them, and electronic device FUJIFILM CORPORATION (JP) 2017-04-25 US disclosed
US-9557643-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device using the same and electronic device FUJIFILM CORPORATION (JP) 2017-01-31 US disclosed
US-9551933-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, using the same, pattern forming method, manufacturing method of electronic device, and electronic device FUJIFILM CORPORATION (JP) 2017-01-24 US disclosed
US-9527809-B2 Compound, actinic ray-sensitive or radiation-sensitive resin composition, resist film, and pattern formation method, and method for manufacturing electronic device using same, and electronic device FUJIFILM CORPORATION (JP) 2016-12-27 US disclosed
US-20160320700-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK PROVIDED WITH ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-11-03 US disclosed
US-9470980-B2 Pattern-forming method, electron beam-sensitive or extreme ultraviolet radiation-sensitive resin composition, resist film, manufacturing method of electronic device using them and electronic device FUJIFILM CORPORATION (JP) 2016-10-18 US disclosed
US-9448477-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, manufacturing method of electronic device using the same, and electronic device FUJIFILM CORPORATION (JP) 2016-09-20 US disclosed
US-20110043932-A1 LENS DEVICE FUJIFILM CORPORATION (JP) 2011-02-24 US disclosed
US-20110026109-A1 OPTICAL LENS, OPTICAL SYSTEM UNIT AND IMAGING APPARATUS FUJIFILM CORPORATION (JP) 2011-02-03 US disclosed
US-20110026109-A1 OPTICAL LENS, OPTICAL SYSTEM UNIT AND IMAGING APPARATUS FUJIFILM CORPORATION (JP) 2011-02-03 US disclosed
US-20100296181-A1 PLASTIC LENS FUJIFILM CORPORATION (JP) 2010-11-25 US disclosed
US-20100296181-A1 PLASTIC LENS FUJIFILM CORPORATION (JP) 2010-11-25 US disclosed
US-20100225013-A1 METHOD FOR PRODUCING OPTICAL MEMBER AND OPTICAL MEMBER FORMED BY THE PRODUCTION PROCESS FUJIFILM CORPORATION (JP) 2010-09-09 US disclosed
US-20100225013-A1 METHOD FOR PRODUCING OPTICAL MEMBER AND OPTICAL MEMBER FORMED BY THE PRODUCTION PROCESS FUJIFILM CORPORATION (JP) 2010-09-09 US disclosed
US-20100104842-A1 ORGANIC-INORGANIC HYBRID COMPOSITION FUJIFILM CORPORATION (JP) 2010-04-29 US disclosed
US-20090035548-A1 ORGANIC-INORGANIC HYBRID COMPOSITION, METHOD FOR PRODUCING THE SAME, MOLDING AND OPTICAL COMPONENT FUJIFILM CORPORATION (JP) 2009-02-05 US disclosed
US-20080241749-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed