SCHEMBL825476

SCHEMBL825476

CC(C)(C)O[Si](O)(O)OC(C)(C)C

nearest known ligand 0.38

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.38
TSHR P16473 1/20 0.31
TDP1 Q9NUW8 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7952920 0.96 ALDH1A1 (0.35) ALDH1A1
SCHEMBL525601 0.77 ALDH1A1 (0.38) ALDH1A1TSHRTDP1
SCHEMBL232182 0.77
SCHEMBL28590363 0.74 ALDH1A1 (0.35) ALDH1A1
SCHEMBL1357213 0.74 ALDH1A1 (0.35) ALDH1A1
SCHEMBL28582112 0.74 ALDH1A1 (0.35) ALDH1A1
SCHEMBL4529605 0.74
SCHEMBL3894247 0.74
SCHEMBL8961716 0.72 ALDH1A1 (0.33) ALDH1A1
SCHEMBL26090454 0.72 ALDH1A1 (0.33) ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 49 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8765221-B2 Film forming method and film forming apparatus TOKYO ELECTRON LIMITED (JP) 2014-07-01 US claimed
US-20130017328-A1 FILM FORMING METHOD AND FILM FORMING APPARATUS TOKYO ELECTRON LIMITED (JP) 2013-01-17 US claimed
US-7271112-B1 Methods for forming high density, conformal, silica nanolaminate films via pulsed deposition layer in structures of confined geometry NOVELLUS SYSTEMS, INC. (US) 2007-09-18 US claimed
US-7135418-B1 Optimal operation of conformal silica deposition reactors NOVELLUS SYSTEMS, INC. (US) 2006-11-14 US claimed
US-4338133-A Jet printing ink composition DAI NIPPON TORYO CO., LTD. (JP) 1982-07-06 US claimed
US-9460958-B2 Air gap isolation in non-volatile memory SANDISK TECHNOLOGIES LLC (US) 2016-10-04 US disclosed
EP-3058115-A1 FAST ATOMIC LAYER DEPOSITION PROCESS USING SEED PRECURSOR Veeco ALD Inc. (US) 2016-08-24 EP disclosed
US-20150104574-A1 FAST ATOMIC LAYER DEPOSITION PROCESS USING SEED PRECURSOR VEECO ALD INC. 2015-04-16 US disclosed
EP-2583302-B1 Non-volatile memory comprising bit line air gaps and word line air gaps and corresponding manufacturing method SANDISK TECHNOLOGIES INC (US) 2015-01-07 EP disclosed
US-20140311574-A1 Self-Aligned Deposition of Silica Layers for Dye-Sensitized Solar Cells PRESIDENT AND FELLOWS OF HARVARD COLLEGE 2014-10-23 US disclosed
US-8765221-B2 Film forming method and film forming apparatus TOKYO ELECTRON LIMITED (JP) 2014-07-01 US disclosed
US-20140120692-A1 Air Gap Isolation In Non-Volatile Memory SANDISK TECHNOLOGIES INC. (US) 2014-05-01 US disclosed
US-6596404-B1 To provide a lower dielectric constant than that of silicon oxide, dielectric coatings formed from siloxane-based resins DOW CORNING CORPORATION 2003-07-22 US disclosed
US-20030087082-A1 Dielectric coating for electronic substrate DOW CORNING CORPORATION 2003-05-08 US disclosed
US-20030064254-A1 Siloxane resins DOW CORNING CORPORATION 2003-04-03 US disclosed
WO-2003010246-A1 SILOXANE RESINS DOW CORNING CORPORATION (US) 2003-02-06 WO disclosed
US-4363902-A Process and heavy metal catalyst for the polymerization of α-olefins, particularly polyethylene WACKER-CHEMIE GMBH (DE) 1982-12-14 US disclosed
US-4338133-A Jet printing ink composition DAI NIPPON TORYO CO., LTD. (JP) 1982-07-06 US disclosed
EP-0036211-A1 Process for the polymerization of alpha-olefins Wacker-Chemie GmbH (DE) 1981-09-23 EP disclosed
US-RE30698-E Hydraulic fluids comprising orthosilicate esters CASTROL LIMITED (GB) 1981-08-04 US disclosed