Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.38 |
| ▸ | TSHR | P16473 | 1/20 | 0.31 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28590363 | 0.96 | ALDH1A1 (0.35) | ALDH1A1 | |
| SCHEMBL28582112 | 0.96 | ALDH1A1 (0.35) | ALDH1A1 | |
| SCHEMBL1482718 | 0.93 | ALDH1A1 (0.33) | ALDH1A1 | |
| SCHEMBL8961716 | 0.86 | ALDH1A1 (0.33) | ALDH1A1 | |
| SCHEMBL16681904 | 0.83 | ALDH1A1 (0.33) | ALDH1A1 | |
| SCHEMBL7952920 | 0.81 | ALDH1A1 (0.35) | ALDH1A1 | |
| SCHEMBL4947212 | 0.81 | ALDH1A1 (0.38) | ALDH1A1TSHRTDP1 | |
| SCHEMBL4630501 | 0.81 | ALDH1A1 (0.38) | ALDH1A1TSHRTDP1 | |
| SCHEMBL4630474 | 0.81 | ALDH1A1 (0.38) | ALDH1A1TSHRTDP1 | |
| SCHEMBL12630022 | 0.78 | ALDH1A1 (0.30) | ALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1041 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4744089-A1 | SELECTIVE DEPOSITION OF ALUMINUM-CONTAINING DIELECTRIC MATERIAL ON DIELECTRIC OVER METAL UTILIZING ALKYNES | Versum Materials US, LLC (US) | 2026-05-20 | — | — | EP | claimed |
| US-20260123372-A1 | MANUFACTURING SEMICONDUCTOR DEVICE USING SELECTIVE DIELECTRIC ON DIELECTRIC (DOD) DEPOSITION PROCESS | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-04-30 | — | — | US | claimed |
| US-20260103796-A1 | MULTILAYER COATINGS FOR REDUCED SURFACE METALS ON OXIDE FILMS | ENTEGRIS INC (US) | 2026-04-16 | — | — | US | claimed |
| US-12604684-B2 | Method and system for mitigating underlayer damage during formation of patterned structures | ASM IP HOLDING B.V. (NL) | 2026-04-14 | — | — | US | claimed |
| US-20260085449-A1 | CARBON-COATED NANOWIRE NETWORK ELECTRODES | FUNDACION IMDEA MAT (ES) | 2026-03-26 | — | — | US | claimed |
| US-12571093-B2 | Selective deposition of silicon oxide on metal surfaces | ASM IP HOLDING B.V. (NL) | 2026-03-10 | — | — | US | claimed |
| US-20250388723-A1 | SILYL ETHER-CONTAINING POLYMERS AND USES THEREOF | ENTEGRIS INC (US) | 2025-12-25 | — | — | US | claimed |
| US-20250376758-A1 | SELECTIVE DEPOSITION OF METAL-CONTAINING MATERIAL | ASM IP HOLDING BV (NL) | 2025-12-11 | — | — | US | claimed |
| EP-4058622-B1 | NANOWIRES NETWORK | FUNDACION IMDEA MAT (ES) | 2025-10-15 | — | — | EP | claimed |
| US-12442105-B2 | Nanowires network | FUNDACIÓN IMDEA MATERIALES (ES) | 2025-10-14 | — | — | US | claimed |
| US-20050054213-A1 | Methods of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry, and methods of forming trench isolation in the fabrication of integrated circuitry | OMNIMAX INTERNATIONAL, LLC | 2005-03-10 | — | — | US | claimed |
| WO-2005008746-A2 | METHODS OF FORMING A PHOSPHORUS DOPED SILICON DIOXIDE LAYER | MICRON TECHNOLOGY, INC. (US) | 2005-01-27 | — | — | WO | claimed |
| US-20050009368-A1 | Methods of forming a phosphorus doped silicon dioxide comprising layer, and methods of forming trench isolation in the fabrication of integrated circuitry | MICRON TECHNOLOGY, INC. | 2005-01-13 | — | — | US | claimed |
| US-20040266219-A1 | METHODS OF FORMING LAYERS OVER SUBSTRATES | MICRON SEMICONDUCTOR PRODUCTS, INC. | 2004-12-30 | — | — | US | claimed |
| US-20040266197-A1 | METHODS OF FORMING LAYERS OVER SUBSTRATES; AND METHODS OF FORMING TRENCHED ISOLATION REGIONS | MICRON SEMICONDUCTOR PRODUCTS, INC. | 2004-12-30 | — | — | US | claimed |
| US-6835664-B1 | Methods of forming trenched isolation regions | MICRON TECHNOLOGY, INC. | 2004-12-28 | — | — | US | claimed |
| US-6777351-B1 | Masking without photolithography during the formation of a semiconductor device | MICRON TECHNOLOGY, INC. | 2004-08-17 | — | — | US | claimed |
| US-20040146655-A1 | Method for producing vertical patterned layers made of silicon dioxide | POLARIS INNOVATIONS LIMITED (IE) | 2004-07-29 | — | — | US | claimed |
| CN-1501438-A | Method for manufacturing lead straight pattern layer by silicon dioxide | �����ɷ� | 2004-06-02 | — | — | CN | claimed |
| US-4338133-A | Jet printing ink composition | DAI NIPPON TORYO CO., LTD. (JP) | 1982-07-06 | — | — | US | claimed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20250388723-A1 | SILYL ETHER-CONTAINING POLYMERS AND USES THEREOF | SIK1, FRK, SIK3 | ALDH1A1 2421/4885TSHR 4004/4885TDP1 4631/4885 |
| US-20260085449-A1 | CARBON-COATED NANOWIRE NETWORK ELECTRODES | KDR, VEGFA, VCAM1 | ALDH1A1 2640/4885TSHR 3798/4885TDP1 3285/4885 |
| US-12571093-B2 | Selective deposition of silicon oxide on metal surfaces | EPCAM, L1CAM, ITGAM | ALDH1A1 1009/4885TSHR 3108/4885TDP1 4499/4885 |
| US-20260103796-A1 | MULTILAYER COATINGS FOR REDUCED SURFACE METALS ON OXIDE FILMS | CBL, CBLB, AGO2 | ALDH1A1 1250/4885TSHR 3360/4885TDP1 4132/4885 |
| US-12604684-B2 | Method and system for mitigating underlayer damage during formation of patterned structures | MRE11, SPOP, OGG1 | ALDH1A1 4568/4885TSHR 4541/4885TDP1 2463/4885 |
| US-20260123372-A1 | MANUFACTURING SEMICONDUCTOR DEVICE USING SELECTIVE DIELECTRIC ON DIELECTRIC (DOD) DEPOSITION PROCESS | PDK1, HPD, HAO2 | ALDH1A1 41/4885TSHR 4501/4885TDP1 545/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.