SCHEMBL825491

SCHEMBL825491

CCC(C)C(=O)Oc1cccc(OC(=O)c2ccccc2)c1

nearest known ligand 0.53

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 7/20 0.53
MAPT P10636 4/20 0.49
TDP1 Q9NUW8 3/20 0.49
MEN1 O00255 1/20 0.49
ALDH1A1 P00352 2/20 0.45
LMNA P02545 1/20 0.44
SERPINE1 P05121 1/20 0.44
ESR1 P03372 1/20 0.43
ESR2 Q92731 1/20 0.43
L3MBTL1 Q9Y468 1/20 0.43
PKM P14618 1/20 0.43
ELANE P08246 1/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL825513 0.93 MAPT (0.49) KMT2AMAPTTDP1MEN1ALDH1A1
SCHEMBL825436 0.90 KMT2A (0.54) KMT2AMAPTTDP1MEN1ALDH1A1
SCHEMBL825605 0.88 ELANE (0.53) KMT2AMAPTTDP1MEN1ALDH1A1
SCHEMBL17138193 0.88 KMT2A (0.47) KMT2AMAPTTDP1MEN1ALDH1A1
SCHEMBL825600 0.88 TSHR (0.46) KMT2AMAPTTDP1ALDH1A1ESR1
SCHEMBL825541 0.86 ELANE (0.54) MAPTTDP1ALDH1A1LMNAL3MBTL1
SCHEMBL14998124 0.85 KMT2A (0.55) KMT2AMAPTPKM
SCHEMBL16300529 0.85 ELANE (0.59) KMT2AMAPTTDP1MEN1ALDH1A1
SCHEMBL9987065 0.84 KMT2A (0.51) KMT2AMAPTTDP1MEN1ALDH1A1
SCHEMBL9987068 0.84 KMT2A (0.51) KMT2AMAPTTDP1MEN1ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9188862-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the same FUJIFILM CORPORATION (JP) 2015-11-17 US disclosed
US-20140295332-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD, EACH USING THE SAME FUJIFILM CORPORATION (JP) 2014-10-02 US disclosed
US-8142977-B2 mixture of resin which decomposes under acid under exposure to actinic radiation, acid generator FUJIFILM CORPORATION (JP) 2012-03-27 US disclosed
US-20080241749-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed