SCHEMBL825546

SCHEMBL825546

CCC(C)(C)C(=O)Oc1cccc(C(=O)c2ccccc2)c1

nearest known ligand 0.54

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
ELANE P08246 10/20 0.54
STS P08842 1/20 0.48
L3MBTL1 Q9Y468 3/20 0.47
ATM Q13315 1/20 0.47
TDP1 Q9NUW8 1/20 0.47
LMNA P02545 1/20 0.47
MAPK1 P28482 1/20 0.47
SRD5A2 P31213 1/20 0.47
NPC1 O15118 1/20 0.45
POLB P06746 1/20 0.45
CYP2C9 P11712 1/20 0.45
RAB9A P51151 1/20 0.45
PPARA Q07869 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12892540 0.88 NPC1 (0.57) ELANENPC1POLBCYP2C9RAB9A
SCHEMBL825379 0.87 ESR1 (0.52) ELANEL3MBTL1TDP1MAPK1NPC1
SCHEMBL825593 0.87 ELANE (0.71) ELANEPPARA
SCHEMBL825441 0.86 KMT2A (0.50) ELANEL3MBTL1TDP1
SCHEMBL131278 0.83 ELANE (0.51) ELANEL3MBTL1ATMTDP1PPARA
SCHEMBL825350 0.82 RXRA (0.48)
SCHEMBL18135084 0.82 CYP3A4 (0.57) ELANETDP1LMNANPC1RAB9A
SCHEMBL19888151 0.81 ELANE (0.57) ELANELMNAMAPK1SRD5A2POLB
SCHEMBL25468124 0.81 NPC1 (0.42) ELANELMNANPC1POLBCYP2C9
SCHEMBL2742153 0.80 CYP3A4 (0.59) ELANEPOLB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12018107-B2 Polymer material, composition, and method of manufacturing semiconductor device KIOXIA CORPORATION (JP) 2024-06-25 US disclosed
US-8142977-B2 mixture of resin which decomposes under acid under exposure to actinic radiation, acid generator FUJIFILM CORPORATION (JP) 2012-03-27 US disclosed
US-20080241749-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed