SCHEMBL825589

SCHEMBL825589

CCOC(C)Oc1ccc(C(C)CC(CC)c2ccc(O)cc2)cc1

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 6/20 0.42
ESR2 Q92731 5/20 0.42
TDP1 Q9NUW8 2/20 0.37
MAPT P10636 2/20 0.37
LMNA P02545 1/20 0.37
CYP1A2 P05177 1/20 0.37
PGR P06401 1/20 0.37
CHRM2 P08172 1/20 0.37
CYP3A4 P08684 1/20 0.37
ADORA3 P0DMS8 1/20 0.37
AR P10275 1/20 0.37
CYP2D6 P10635 1/20 0.37
CHRM1 P11229 1/20 0.37
CYP2C9 P11712 1/20 0.37
ALOX15 P16050 1/20 0.37
DRD1 P21728 1/20 0.37
TBXA2R P21731 1/20 0.37
PTGS1 P23219 1/20 0.37
SLC6A2 P23975 1/20 0.37
CYP2C19 P33261 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13098434 1.00 ESR1 (0.42) ESR1ESR2TDP1MAPTLMNA
SCHEMBL16200765 0.90 ALDH1A1 (0.34) TDP1MAPTLMNAALDH1A1TSHR
SCHEMBL14066998 0.90 ESR1 (0.42) ESR1ESR2TDP1MAPTLMNA
SCHEMBL14067023 0.90 LTB4R (0.43) ESR1ESR2LMNACYP1A2CYP2D6
SCHEMBL825415 0.90 ESR1 (0.40) ESR1ESR2TDP1MAPTLMNA
SCHEMBL13098433 0.90 ESR1 (0.40) ESR1ESR2TDP1MAPTLMNA
SCHEMBL12578584 0.89 ESR1 (0.44) ESR1ESR2TDP1MAPTLMNA
SCHEMBL13098435 0.89 ESR1 (0.44) ESR1ESR2TDP1MAPTLMNA
SCHEMBL13098432 0.88 ESR1 (0.39) ESR1ESR2TDP1MAPTLMNA
SCHEMBL13098439 0.86 ESR1 (0.42) ESR1ESR2TDP1MAPTLMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11725078-B2 Method for producing acid-decomposable polymer MARUZEN PETROCHEMICAL CO., LTD. (JP) 2023-08-15 US disclosed
US-8142977-B2 mixture of resin which decomposes under acid under exposure to actinic radiation, acid generator FUJIFILM CORPORATION (JP) 2012-03-27 US disclosed
US-7691560-B2 Resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2010-04-06 US disclosed
US-7521168-B2 Compound that has a reduction potential higher than that of diphenyl iodonium salt and generates an acid upon irradiation of an actinic ray or radiation. FUJIFILM CORPORATION (JP) 2009-04-21 US disclosed
US-20080241749-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed
US-20080096130-A1 POSITIVE RESIST COMPOSITION FUJIFILM CORPORATION 2008-04-24 US disclosed
US-7361446-B2 Sensitivity, high resolution, good pattern profile, used for super-microlithography FUJIFILM CORPORATION (JP) 2008-04-22 US disclosed
US-20070224539-A1 Resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2007-09-27 US disclosed