SCHEMBL8323376

SCHEMBL8323376

c1cc([S+](c2ccc(OC3CCCCO3)cc2)c2ccc(OC3CCCCO3)cc2)ccc1OC1CCCCO1

nearest known ligand 0.55

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TNK2 Q07912 3/20 0.40
MEN1 O00255 1/20 0.39
KMT2A Q03164 1/20 0.39
DHFR P00374 1/20 0.38
HSD11B1 P28845 1/20 0.37
KDM4C Q9H3R0 1/20 0.35
NPC1 O15118 1/20 0.34
RAB9A P51151 1/20 0.34
ACP1 P24666 1/20 0.33
LMNA P02545 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
NPY1R P25929 1/20 0.31
NPY2R P49146 1/20 0.31
NPY4R P50391 1/20 0.31
NPY5R Q15761 1/20 0.31
KDM4E B2RXH2 1/20 0.31
ALDH1A1 P00352 1/20 0.31
KCNH2 Q12809 1/20 0.31
HRH3 Q9Y5N1 1/20 0.31
L3MBTL1 Q9Y468 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8319100 0.95 TNK2 (0.36) TNK2MEN1KMT2ADHFRHSD11B1
SCHEMBL13130990 0.94 MEN1 (0.39) TNK2MEN1KMT2ADHFRHSD11B1
SCHEMBL13131043 0.94 MEN1 (0.39) TNK2MEN1KMT2ADHFRHSD11B1
SCHEMBL13130994 0.92 TRPA1 (0.39) TNK2MEN1KMT2ADHFRHSD11B1
SCHEMBL3500438 0.89 TNK2 (0.44) TNK2MEN1KMT2ADHFRHSD11B1
SCHEMBL8327555 0.89 DDB1 (0.36) TNK2MEN1KMT2ADHFRHSD11B1
SCHEMBL8664157 0.87 TNK2 (0.38) TNK2MEN1KMT2ADHFRHSD11B1
SCHEMBL8317952 0.84 MEN1 (0.38) TNK2MEN1KMT2ADHFRHSD11B1
SCHEMBL8325663 0.84 GAA (0.38) MEN1KMT2ANPC1RAB9ASMN1; SMN2
SCHEMBL8078953 0.83 HSD11B1 (0.36) TNK2MEN1KMT2AHSD11B1LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8895222-B2 Actinic ray-sensitive or radiation-sensitive resin composition and resist film and pattern forming method using the composition FUJIFILM CORPORATION (JP) 2014-11-25 US disclosed
US-20100248149-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2010-09-30 US disclosed
US-5880169-A HAVING HIGH RESOLUTION FOR FINE PATTERNING SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-03-09 US disclosed