SCHEMBL837479

SCHEMBL837479

CCCCCC[PH](c1ccccc1)(c1ccccc1)c1ccccc1

nearest known ligand 0.42

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 2/20 0.42
KMT2A Q03164 2/20 0.42
DNM1 Q05193 2/20 0.40
EPHX2 P34913 2/20 0.40
TP53 P04637 1/20 0.39
MAPK1 P28482 1/20 0.39
SMN1; SMN2 Q16637 1/20 0.39
PKM P14618 1/20 0.39
CES2 O00748 1/20 0.39
CES1 P23141 1/20 0.39
CETP P11597 3/20 0.39
MMP2 P08253 1/20 0.39
MMP3 P08254 1/20 0.39
MMP9 P14780 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL160393 1.00 MEN1 (0.42) MEN1KMT2ADNM1EPHX2TP53
SCHEMBL4386268 1.00 MEN1 (0.42) MEN1KMT2ADNM1EPHX2TP53
SCHEMBL5301933 1.00 MEN1 (0.42) MEN1KMT2ADNM1EPHX2TP53
SCHEMBL9165455 1.00 MEN1 (0.42) MEN1KMT2ADNM1EPHX2TP53
SCHEMBL4650965 1.00 MEN1 (0.42) MEN1KMT2ADNM1EPHX2TP53
SCHEMBL427955 1.00 MEN1 (0.42) MEN1KMT2ADNM1EPHX2TP53
SCHEMBL868174 1.00 MEN1 (0.42) MEN1KMT2ADNM1EPHX2TP53
SCHEMBL3149218 1.00 MEN1 (0.42) MEN1KMT2ADNM1EPHX2TP53
SCHEMBL1703685 1.00 MEN1 (0.42) MEN1KMT2ADNM1EPHX2TP53
SCHEMBL5302396 1.00 MEN1 (0.42) MEN1KMT2ADNM1EPHX2TP53

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 191 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12269969-B2 Polishing composition and method with high selectivity for silicon nitride and polysilicon over silicon oxide CMC MATERIALS LLC (US) 2025-04-08 US claimed
EP-4048751-B1 POLISHING COMPOSITION AND METHOD WITH HIGH SELECTIVITY FOR SILICON NITRIDE AND POLYSILICON OVER SILICON OXIDE CMC MAT LLC (US) 2025-03-19 EP claimed
EP-4048751-A1 POLISHING COMPOSITION AND METHOD WITH HIGH SELECTIVITY FOR SILICON NITRIDE AND POLYSILICON OVER SILICON OXIDE CMC Materials, Inc. (US) 2022-08-31 EP claimed
CN-114599753-A Polishing composition and method with high selectivity for silicon nitride and polysilicon versus silicon oxide CMC材料股份有限公司 2022-06-07 CN claimed
WO-2021081145-A1 POLISHING COMPOSITION AND METHOD WITH HIGH SELECTIVITY FOR SILICON NITRIDE AND POLYSILICON OVER SILICON OXIDE CMC MATERIALS, INC. (US) 2021-04-29 WO claimed
US-20210115297-A1 POLISHING COMPOSITION AND METHOD WITH HIGH SELECTIVITY FOR SILICON NITRIDE AND POLYSILICON OVER SILICON OXIDE CMC MATERIALS LLC 2021-04-22 US claimed
US-20190244573-A1 FLUID SYSTEMS FOR ELECTROWETTING CELLS ABL IP HOLDING LLC 2019-08-08 US claimed
US-10053556-B2 Barrier coating compositions, composites prepared therefrom, and quantum dot polymer composite articles including the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2018-08-21 US claimed
US-20160160060-A1 BARRIER COATING COMPOSITIONS, COMPOSITES PREPARED THEREFROM, AND QUANTUM DOT POLYMER COMPOSITE ARTICLES INCLUDING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2016-06-09 US claimed
EP-1973974-B1 A PROCESS FOR PREPARING 'ONIUM SALTS SUN CHEMICAL CORP (US) 2014-04-30 EP claimed
US-7863459-B2 Process for preparing onium salts SUN CHEMICAL CORPORATION (US) 2011-01-04 US claimed
US-20080287686-A1 Process for Preparing Onium Salts SUN CHEMICAL CORP (US) 2008-11-20 US claimed
EP-1973974-A2 A PROCESS FOR PREPARING 'ONIUM SALTS Sun Chemical Corporation (US) 2008-10-01 EP claimed
WO-2007075498-A2 A PROCESS FOR PREPARING 'ONIUM SALTS SUN CHEMICAL CORPORATION (US) 2007-07-05 WO claimed
US-6444294-B1 MULTILAYER PHOTOGRAPHIC FILMS XEROX CORPORATION 2002-09-03 US claimed
EP-0275501-B1 PROCESS FOR THE PREPARATION OF (Z)-2-(2-ARYLETHENYL)-ARYLCARBOXYLIC ACIDS BASF Aktiengesellschaft (DE) 1991-03-06 EP claimed
US-12269969-B2 Polishing composition and method with high selectivity for silicon nitride and polysilicon over silicon oxide CMC MATERIALS LLC (US) 2025-04-08 US disclosed
WO-2025057858-A1 RESIST MATERIAL AND METHOD FOR PRODUCING SAME 東京応化工業株式会社 2025-03-20 WO disclosed
EP-0100488-A1 Fluoroepoxides and a process for production thereof Asahi Kasei Kogyo Kabushiki Kaisha (JP) 1984-02-15 EP disclosed
EP-0064293-A1 Process for the production of hexafluoropropylene oxide Asahi Kasei Kogyo Kabushiki Kaisha (JP) 1982-11-10 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080287686-A1 Process for Preparing Onium Salts IK, NOTUM, NOS2 MEN1 3526/4885KMT2A 2078/4885DNM1 1560/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.