SCHEMBL8510246

SCHEMBL8510246

C=C(C)C(=O)Nc1ncccc1O

nearest known ligand 0.51

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
NPC1 O15118 11/20 0.51
RAB9A P51151 11/20 0.51
NR0B1 P51843 1/20 0.51
ATM Q13315 2/20 0.47
MEN1 O00255 1/20 0.47
KMT2A Q03164 1/20 0.47
TDP1 Q9NUW8 2/20 0.45
L3MBTL1 Q9Y468 2/20 0.44
MAPT P10636 3/20 0.43
KDM4E B2RXH2 2/20 0.43
USP2 O75604 1/20 0.43
HPGD P15428 1/20 0.43
XBP1 P17861 1/20 0.43
POLB P06746 1/20 0.42
HTT P42858 1/20 0.42
CGAS Q8N884 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17315853 0.85 RAB9A (0.59) NPC1RAB9AATMKMT2AL3MBTL1
SCHEMBL4449131 0.82 NPC1 (0.56) NPC1RAB9ANR0B1ATMMEN1
SCHEMBL5631579 0.79 NPC1 (0.55) NPC1RAB9ANR0B1ATMMEN1
SCHEMBL1652624 0.77 NPC1 (0.61) NPC1RAB9ANR0B1ATMMEN1
SCHEMBL16303154 0.75 NPC1 (0.52) NPC1RAB9ANR0B1ATMMEN1
SCHEMBL6361946 0.75 RAB9A (0.58) NPC1RAB9ANR0B1ATMMEN1
SCHEMBL2601270 0.75 NPC1 (0.52) NPC1RAB9ANR0B1ATMMEN1
SCHEMBL8079170 0.74 HTT (0.55) NPC1RAB9AKMT2ATDP1L3MBTL1
SCHEMBL30585557 0.74 KDM4E (0.50) NPC1RAB9AATMKMT2ATDP1
SCHEMBL11770261 0.73 RAB9A (0.48) NPC1RAB9ANR0B1ATMMEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 98 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10007178-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
US-9869931-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-01-16 US disclosed
US-9869931-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-01-16 US disclosed
US-9846360-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-12-19 US disclosed
US-9846360-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-12-19 US disclosed
US-9760010-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-09-12 US disclosed
US-9760010-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-09-12 US disclosed
US-9645498-B2 Developer and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-09 US disclosed
US-9645498-B2 Developer and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-09 US disclosed
US-20170115566-A1 RESIST COMPOSITION, PATTERNING PROCESS, AND BARIUM, CESIUM AND CERIUM SALTS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-27 US disclosed
US-20130084528-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-04 US disclosed
US-20130084528-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-04 US disclosed
US-20130084529-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-04 US disclosed
US-20130029270-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-31 US disclosed
US-20130029270-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-31 US disclosed
US-20120202153-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-09 US disclosed
US-20120202153-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-09 US disclosed
US-20120135349-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-31 US disclosed
US-20120135349-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-31 US disclosed
US-20120135349-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-31 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20170115566-A1 RESIST COMPOSITION, PATTERNING PROCESS, AND BARIUM, CESIUM AND CERIUM SALTS CASR, LIFR, LBR NPC1 4363/4885RAB9A 1228/4885NR0B1 2776/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.