SCHEMBL8524496

SCHEMBL8524496

O=[N+]([O-])C1C=CC=CN1c1ccccc1

nearest known ligand 0.34

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 3/20 0.32
LMNA P02545 1/20 0.32
POLB P06746 1/20 0.31
MEN1 O00255 3/20 0.31
KMT2A Q03164 3/20 0.31
KDM4E B2RXH2 1/20 0.31
MAPK1 P28482 1/20 0.31
NPC1 O15118 1/20 0.30
MAPT P10636 1/20 0.30
RAB9A P51151 1/20 0.30
MPI P34949 1/20 0.30
APOBEC3G Q9HC16 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11421426 0.74
SCHEMBL27893678 0.68 POLB (0.32) POLB
SCHEMBL27992891 0.68 POLB (0.32) POLB
SCHEMBL27540147 0.68 MAOA (0.35) POLBMAPK1
SCHEMBL27521248 0.68 POLB (0.33) POLB
SCHEMBL27791970 0.68 NOTUM (0.39) ALDH1A1LMNAPOLBMEN1KMT2A
SCHEMBL27858737 0.67 RECQL (0.32) ALDH1A1POLBKDM4EMAPK1MAPT
Bromide SCHEMBL27702376 0.67 MAOA (0.34) POLB
SCHEMBL28950102 0.66
SCHEMBL6604679 0.66

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-1991017840-A1 PROCESS FOR MAKING FINE CONDUCTOR LINES E.I. DU PONT DE NEMOURS AND COMPANY (US) 1991-11-28 WO claimed
EP-0457071-A2 Process for generating fine conductor lines DU PONT DE NEMOURS (DEUTSCHLAND) GMBH (DE) 1991-11-21 EP claimed
US-6001836-A ANTAGONISTS OF NPY-INDUCED FEEDING BEHAVIOR BRISTOL-MYERS SQUIBB COMPANY (US) 1999-12-14 US disclosed
WO-1998054136-A1 DIHYDROPYRIDINE NPY ANTAGONISTS: CYANOGUANIDINE DERIVATIVES BRISTOL-MYERS SQUIBB COMPANY (US) 1998-12-03 WO disclosed
US-5426016-A Method of forming and removing resist pattern MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 1995-06-20 US disclosed
US-5252433-A Selectively expose resist layer to light, introduce germanium compound into exposed portions, subjecting resist layer to antisotropic oxygen etching, removing resist pattern with acid MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 1993-10-12 US disclosed
WO-1991017840-A1 PROCESS FOR MAKING FINE CONDUCTOR LINES E.I. DU PONT DE NEMOURS AND COMPANY (US) 1991-11-28 WO disclosed
EP-0457071-A2 Process for generating fine conductor lines DU PONT DE NEMOURS (DEUTSCHLAND) GMBH (DE) 1991-11-21 EP disclosed
CN-1041586-A The preparation method of nitro-phenyl-dihydropyridine amides base BAYER AG (DE) 1990-04-25 CN disclosed
CN-1041586-A The preparation method of nitro-phenyl-dihydropyridine amides base BAYER AG (DE) 1990-04-25 CN disclosed