SCHEMBL85598

SCHEMBL85598

CC(C)(C(=O)O)C(C)(C)C(=O)OC(=O)C(C)(C)C(C)(C)C(=O)O

nearest known ligand 0.40

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.40
ALDH1A1 P00352 1/20 0.40
CYP2D6 P10635 1/20 0.32
CYP2C19 P33261 1/20 0.32
HIF1A Q16665 1/20 0.32
PRSS1 P07477 1/20 0.31
CTSG P08311 1/20 0.31
CTRB1 P17538 1/20 0.31
CMA1 P23946 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL85493 0.80 TSHR (0.57) TSHRALDH1A1CYP2D6CYP2C19HIF1A
SCHEMBL1425286 0.80 DGAT1 (0.42) TSHRALDH1A1CYP2D6CYP2C19HIF1A
SCHEMBL13904644 0.78 DGAT1 (0.46) TSHRALDH1A1
Ammonia Solution, Strong SCHEMBL28635066 0.77 TSHR (0.53) TSHRALDH1A1CYP2D6CYP2C19HIF1A
Ammonia Solution, Strong SCHEMBL28635068 0.77 TSHR (0.53) TSHRALDH1A1CYP2D6CYP2C19HIF1A
SCHEMBL787076 0.75 ALDH1A1 (0.32) TSHRALDH1A1
SCHEMBL29142764 0.74 ALDH1A1 (0.33) TSHRALDH1A1
SCHEMBL11077055 0.74 CYP4F2 (0.42) TSHRALDH1A1
SCHEMBL2175957 0.73 TSHR (0.42) TSHRALDH1A1CYP2D6CYP2C19HIF1A
SCHEMBL9067049 0.73 TSHR (0.42) TSHRALDH1A1CYP2D6CYP2C19HIF1A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20160379805-A1 PLASMA PROCESSING APPARATUS AND METHOD TOKYO ELECTRON LIMITED (JP) 2016-12-29 US disclosed
US-20160358753-A1 PLASMA PROCESSING APPARATUS AND METHOD TOKYO ELECTRON LIMITED (JP) 2016-12-08 US disclosed
US-9490105-B2 Plasma processing apparatus and method TOKYO ELECTRON LIMITED (JP) 2016-11-08 US disclosed
US-20140326409-A1 PLASMA PROCESSING APPARATUS AND METHOD TOKYO ELECTRON LIMITED (JP) 2014-11-06 US disclosed
US-8790490-B2 Plasma processing apparatus and method TOKYO ELECTRON LIMITED (JP) 2014-07-29 US disclosed
US-20140124139-A1 PLASMA PROCESSING APPARATUS AND METHOD TOKYO ELECTRON LIMITED (JP) 2014-05-08 US disclosed
US-20120145324-A1 PLASMA PROCESSING APPARATUS AND METHOD KOSHIISHI AKIRA (JP) 2012-06-14 US disclosed
US-8137471-B2 Plasma processing apparatus and method TOKYO ELECTRON LIMITED (JP) 2012-03-20 US disclosed
US-8128831-B2 Plasma etching method and computer-readable storage medium TOKYO ELECTRON LIMITED (JP) 2012-03-06 US disclosed
US-20110272097-A1 PLASMA PROCESSING APPARATUS AND METHOD KOSHIISHI AKIRA 2011-11-10 US disclosed
US-7988816-B2 Plasma processing apparatus and method TOKYO ELECTRON LIMITED (JP) 2011-08-02 US disclosed
US-7740737-B2 Plasma processing apparatus and method TOKYO ELECTRON LIMITED (JP) 2010-06-22 US disclosed
US-20100126668-A1 PLASMA PROCESSING APPARATUS AND METHOD TOKYO ELECTRON LIMITED (JP) 2010-05-27 US disclosed
US-20070165355-A1 PLASMA ETCHING METHOD AND COMPUTER-READABLE STORAGE MEDIUM TOKYO ELECTON LIMITED (JP) 2007-07-19 US disclosed