Predicted protein targets (top 1)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CTSD | P07339 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2230540 | 0.73 | CTSD (0.43) | CTSD | |
| SCHEMBL4086701 | 0.67 | CTSD (0.35) | CTSD | |
| SCHEMBL28961651 | 0.65 | CTSD (0.38) | CTSD | |
| SCHEMBL9860509 | 0.65 | CTSD (0.33) | CTSD | |
| SCHEMBL9647772 | 0.63 | CTSD (0.32) | CTSD | |
| SCHEMBL25223152 | 0.61 | CTSD (0.35) | CTSD | |
| SCHEMBL9860117 | 0.61 | CTSD (0.35) | CTSD | |
| SCHEMBL2851519 | 0.61 | CTSD (0.35) | CTSD | |
| SCHEMBL5616521 | 0.61 | CTSD (0.35) | CTSD | |
| SCHEMBL9860925 | 0.61 | CTSD (0.35) | CTSD |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-1117389-C | Semiconductor layer mixed with chemical vapor deposited rare-earth | IBM (US) | 2003-08-06 | — | — | CN | claimed |
| CN-1255735-A | Semiconductor layer mixed with chemical vapor deposited rare-earth | IBM (US) | 2000-06-07 | — | — | CN | claimed |
| EP-0586321-B1 | Formation of supersaturated rare earth doped semiconductor layers by CVD | IBM (US) | 1998-05-20 | — | — | EP | claimed |
| US-5322813-A | Method of making supersaturated rare earth doped semiconductor layers by chemical vapor deposition | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1994-06-21 | — | — | US | claimed |
| EP-0586321-A2 | Supersaturated rare earth doped semiconductor layers by CVD | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1994-03-09 | — | — | EP | claimed |
| CN-1117389-C | Semiconductor layer mixed with chemical vapor deposited rare-earth | IBM (US) | 2003-08-06 | — | — | CN | disclosed |
| CN-1054234-C | Chemical Vapor Deposition of Supersaturated Rare Earth Doped Semiconductor Layers | IBM (US) | 2000-07-05 | — | — | CN | disclosed |
| CN-1255735-A | Semiconductor layer mixed with chemical vapor deposited rare-earth | IBM (US) | 2000-06-07 | — | — | CN | disclosed |
| EP-0586321-B1 | Formation of supersaturated rare earth doped semiconductor layers by CVD | IBM (US) | 1998-05-20 | — | — | EP | disclosed |
| US-5646425-A | Supersaturated rare earth doped semiconductor layers by chemical vapor deposition | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1997-07-08 | — | — | US | disclosed |
| US-5534079-A | Supersaturated rare earth doped semiconductor layers formed by chemical vapor deposition | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1996-07-09 | — | — | US | disclosed |
| US-5322813-A | Method of making supersaturated rare earth doped semiconductor layers by chemical vapor deposition | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1994-06-21 | — | — | US | disclosed |
| EP-0586321-A2 | Supersaturated rare earth doped semiconductor layers by CVD | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1994-03-09 | — | — | EP | disclosed |