SCHEMBL861914

SCHEMBL861914

C=CC([SiH3])[N]C([SiH3])C=C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4946810 0.65
SCHEMBL253043 0.65
SCHEMBL367609 0.61
SCHEMBL28981335 0.61
SCHEMBL8814616 0.58
SCHEMBL175049 0.58
SCHEMBL516191 0.58
SCHEMBL3094040 0.58
SCHEMBL175774 0.58
SCHEMBL68491 0.58

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 55 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2017368-B1 Precursor Compositions And Methods ROHM & HAAS ELECT MAT (US) 2019-10-16 EP claimed
EP-2000561-B1 Organometallic compounds ROHM & HAAS ELECT MAT (US) 2013-12-11 EP claimed
US-8142847-B2 Precursor compositions and methods ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2012-03-27 US claimed
US-20110287184-A1 PRECURSOR COMPOSITIONS AND METHODS ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2011-11-24 US claimed
US-8012536-B2 Method of forming metal-containing layer using organometallic compounds ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2011-09-06 US claimed
EP-2017368-A2 Precursor Compositions And Methods Rohm and Haas Electronic Materials LLC (US) 2009-01-21 EP claimed
US-20090017208-A1 Precursor compositions and methods ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2009-01-15 US claimed
US-20080305260-A1 Organometallic compounds ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2008-12-11 US claimed
EP-2000561-A1 Organometallic compounds Rohm and Haas Electronic Materials, L.L.C. (US) 2008-12-10 EP claimed
US-11807652-B2 Tungsten compound, raw material for thin film formation and method for producing thin film ADEKA CORPORATION (JP) 2023-11-07 US disclosed
US-11618762-B2 Compound, raw material for forming thin film, method for manufacturing thin film, and amidine compound ADEKA CORPORATION (JP) 2023-04-04 US disclosed
US-20220017554-A1 COMPOUND, RAW MATERIAL FOR FORMING THIN FILM, METHOD FOR MANUFACTURING THIN FILM, AND AMIDINE COMPOUND ADEKA CORPORATION (JP) 2022-01-20 US disclosed
US-11161867-B2 Compound, raw material for forming thin film, method for manufacturing thin film, and amidine compound ADEKA CORPORATION (JP) 2021-11-02 US disclosed
US-20210193508-A1 METHOD OF FORMING MATERIAL FILM, INTEGRATED CIRCUIT DEVICE, AND METHOD OF MANUFACTURING THE INTEGRATED CIRCUIT DEVICE SAMSUNG ELECTRONICS CO., LTD. (KR) 2021-06-24 US disclosed
US-20110287184-A1 PRECURSOR COMPOSITIONS AND METHODS ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2011-11-24 US disclosed
US-8012536-B2 Method of forming metal-containing layer using organometallic compounds ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2011-09-06 US disclosed
EP-2017368-A2 Precursor Compositions And Methods Rohm and Haas Electronic Materials LLC (US) 2009-01-21 EP disclosed
US-20090017208-A1 Precursor compositions and methods ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2009-01-15 US disclosed
US-20080305260-A1 Organometallic compounds ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2008-12-11 US disclosed
EP-2000561-A1 Organometallic compounds Rohm and Haas Electronic Materials, L.L.C. (US) 2008-12-10 EP disclosed