Known targets — ChEMBL curated mechanism
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL30165942 | 0.87 | — | — | |
| SCHEMBL31552413 | 0.87 | — | — | |
| SCHEMBL31425199 | 0.87 | — | — | |
| SCHEMBL6699419 | 0.87 | — | — | |
| SCHEMBL58411 | 0.87 | — | — | |
| SCHEMBL5615326 | 0.87 | — | — | |
| SCHEMBL1981980 | 0.87 | — | — | |
| SCHEMBL3135196 | 0.87 | — | — | |
| SCHEMBL6855995 | 0.87 | — | — | |
| SCHEMBL1281442 | 0.87 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 296 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-108922889-B | Semiconductor device with a semiconductor layer having a plurality of semiconductor layers | 三星电子株式会社 | 2023-05-12 | — | — | CN | claimed |
| CN-115991481-A | Compound lanthanum strontium chloroborate and lanthanum barium chloroborate, nonlinear optical crystal thereof and preparation method and application thereof | 天津理工大学 | 2023-04-21 | — | — | CN | claimed |
| US-10243057-B2 | MISHFET having a comparatively high and selectable or customizable breakdown voltage | THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS (US) | 2019-03-26 | — | — | US | claimed |
| US-20170117401-A1 | MISHFET HAVING A COMPARATIVELY HIGH AND SELECTABLE OR CUSTOMIZABLE BREAKDOWN VOLTAGE | THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS | 2017-04-27 | — | — | US | claimed |
| CN-105482814-A | Manganese-containing linear red-light fluorescent material and light source device thereof | CHINA GLAZE CO LTD | 2016-04-13 | — | — | CN | claimed |
| US-9232618-B2 | Up and down conversion systems for production of emitted light from various energy sources including radio frequency, microwave energy and magnetic induction sources for upconversion | IMMUNOLIGHT, LLC (US) | 2016-01-05 | — | — | US | claimed |
| EP-2499677-A1 | UP AND DOWN COVERSION SYSTEMS FOR PRODUCTION OF EMITTED LIGHT FROM VARIOUS ENERGY SOURCES INCLUDING RADIO FREQUENCY, MICROWAVE ENERGY AND MAGNETIC INDUCTION SOURCES FOR UPCONVERSION | Immunolight, LLC (US) | 2012-09-19 | — | — | EP | claimed |
| US-20110117202-A1 | UP AND DOWN CONVERSION SYSTEMS FOR PRODUCTION OF EMITTED LIGHT FROM VARIOUS ENERGY SOURCES INCLUDING RADIO FREQUENCY, MICROWAVE ENERGY AND MAGNETIC INDUCTION SOURCES FOR UPCONVERSION | IMMUNOLIGHT, LLC (US) | 2011-05-19 | — | — | US | claimed |
| WO-2011060033-A1 | UP AND DOWN COVERSION SYSTEMS FOR PRODUCTION OF EMITTED LIGHT FROM VARIOUS ENERGY SOURCES INCLUDING RADIO FREQUENCY, MICROWAVE ENERGY AND MAGNETIC INDUCTION SOURCES FOR UPCONVERSION | IMMUNOLIGHT, L.L.C. (US) | 2011-05-19 | — | — | WO | claimed |
| US-20070098892-A1 | METHOD OF FORMING A LAYER AND METHOD OF MANUFACTURING A CAPACITOR USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2007-05-03 | — | — | US | claimed |
| WO-2002009150-A2 | SEMICONDUCTOR STRUCTURE FOR USE WITH HIGH-FREQUENCY SIGNALS | MOTOROLA, INC., A CORPORATION OF THE STATE OF DELAWARE (US) | 2002-01-31 | — | — | WO | claimed |
| WO-2002009126-A2 | SPIN VALVE STRUCTURE | MOTOROLA, INC. (US) | 2002-01-31 | — | — | WO | claimed |
| WO-2002009191-A2 | NON-VOLATILE MEMORY ELEMENT | MOTOROLA, INC. (US) | 2002-01-31 | — | — | WO | claimed |
| WO-2002009158-A2 | SEMICONDUCTOR STRUCTURE INCLUDING A MAGNETIC TUNNEL JUNCTION | MOTOROLA, INC. (US) | 2002-01-31 | — | — | WO | claimed |
| WO-2002009160-A2 | PIEZOELECTRIC STRUCTURES FOR ACOUSTIC WAVE DEVICES AND MANUFACTURING PROCESSES | MOTOROLA, INC. (US) | 2002-01-31 | — | — | WO | claimed |
| WO-2002001648-A1 | SEMICONDUCTOR STRUCTURE, DEVICE, CIRCUIT, AND PROCESS | MOTOROLA, INC. (US) | 2002-01-03 | — | — | WO | claimed |
| US-6248621-B1 | Method of growing high-quality crystalline silicon quantum wells for RTD structures | TEXAS INSTRUMENTS INCORPORATED | 2001-06-19 | — | — | US | claimed |
| EP-1018767-A1 | Extended trench for preventing interaction between components of stacked capacitors | SIEMENS AKTIENGESELLSCHAFT (DE) | 2000-07-12 | — | — | EP | claimed |
| US-6069368-A | Method for growing high-quality crystalline Si quantum wells for RTD structures | TEXAS INSTRUMENTS INCORPORATED (US) | 2000-05-30 | — | — | US | claimed |
| US-3962146-A | PTC THERMISTOR COMPOSITION AND METHOD OF MAKING THE SAME | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JA) | 1976-06-08 | — | — | US | claimed |