⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1955153 | 0.82 | — | — | |
| Selenium SCHEMBL8133562 | 0.82 | — | — | |
| SCHEMBL30928994 | 0.82 | — | — | |
| SCHEMBL1955151 | 0.82 | — | — | |
| Potassium SCHEMBL31095799 | 0.82 | — | — | |
| SCHEMBL31319777 | 0.82 | — | — | |
| SCHEMBL6892939 | 0.82 | — | — | |
| SCHEMBL31474667 | 0.82 | — | — | |
| SCHEMBL1901018 | 0.82 | — | — | |
| SCHEMBL8088010 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 421 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-120051168-A | Preparation method of pixel defining layer | 德山新勒克斯有限公司 | 2025-05-27 | — | — | CN | claimed |
| CN-120051169-A | Preparation method of pixel defining layer | 德山新勒克斯有限公司 | 2025-05-27 | — | — | CN | claimed |
| CN-119556393-A | Nonlinear chirped fiber grating preparation structure based on speed regulation and control | 北京工业大学 | 2025-03-04 | — | — | CN | claimed |
| CN-119342884-B | Semiconductor structure and preparation method thereof | 安徽大学 | 2025-03-04 | — | — | CN | claimed |
| CN-119342884-A | Semiconductor structure and preparation method thereof | 安徽大学 | 2025-01-21 | — | — | CN | claimed |
| CN-117976835-A | Germanium-boron doped nano silicon material and preparation method and application thereof | 中国石油化工股份有限公司 | 2024-05-03 | — | — | CN | claimed |
| CN-117954327-A | Method for forming germanium-boron source and drain in FDSOI | 上海华力集成电路制造有限公司 | 2024-04-30 | — | — | CN | claimed |
| CN-117369041-A | Boron-germanium co-doped polarization-maintaining photosensitive fiber and preparation method thereof | 长飞光纤光缆股份有限公司 | 2024-01-09 | — | — | CN | claimed |
| CN-112881952-A | Magnetic field sensor and preparation method thereof | 国网江西省电力有限公司信息通信分公司 | 2021-06-01 | — | — | CN | claimed |
| CN-109959696-A | Semiconductor biosensor and preparation method thereof based on tunneling field-effect transistor | 西安电子科技大学 | 2019-07-02 | — | — | CN | claimed |
| CN-104678486-B | A kind of preparation method of fiber grating | 武汉烽理光电技术有限公司 | 2018-09-04 | — | — | CN | claimed |
| CN-107907474-A | A kind of novel sensor and its manufacture method and implementation | 江苏科技大学 | 2018-04-13 | — | — | CN | claimed |
| CN-104678486-A | Preparation method of fiber grating | UNIV WUHAN TECH | 2015-06-03 | — | — | CN | claimed |
| CN-101859001-A | Silicon dioxide optical waveguide device based on B-Ge-codoped upper cladding and preparation method thereof | UNIV ZHEJIANG | 2010-10-13 | — | — | CN | claimed |
| EP-1334107-B1 | NON-METALLOCENE COMPOUNDS, METHOD FOR THE PRODUCTION THEREOF AND USE OF THE SAME FOR THE POLYMERISATION OF OLEFINS | BASELL POLYOLEFINE GMBH (DE) | 2006-07-26 | — | — | EP | claimed |
| US-7079740-B2 | Use of amorphous carbon film as a hardmask in the fabrication of optical waveguides | APPLIED MATERIALS, INC. (US) | 2006-07-18 | — | — | US | claimed |
| US-20050199013-A1 | Use of amorphous carbon film as a hardmask in the fabrication of optical waveguides | APPLIED MATERIALS, INC. | 2005-09-15 | — | — | US | claimed |
| US-5453404-A | Method for making an interconnection structure for integrated circuits | ELM TECHNOLOGY CORPORATION | 1995-09-26 | — | — | US | claimed |
| US-5324690-A | Semiconductor device having a ternary boron nitride film and a method for forming the same | MOTOROLA INC. (US) | 1994-06-28 | — | — | US | claimed |
| JP-10111220-A | — | — | None | — | — | JP | disclosed |
| JP-4224685-A | — | — | None | — | — | JP | disclosed |
| CN-117590707-B | Preparation method of pixel defining layer | DUK SAN NEOLUX CO.,LTD. (KR) | 2026-05-26 | — | — | CN | disclosed |
| US-20260136641-A1 | FORMING CFETS THROUGH LOW-TEMPERATURE RE-GROWTH | TAINAN SEMICONDUCTOR MFG CO LTD (TW) | 2026-05-14 | — | — | US | disclosed |
| CN-115440594-B | Semiconductor device and method for manufacturing the same | 台湾积体电路制造股份有限公司 | 2026-05-12 | — | — | CN | disclosed |
| US-20260123019-A1 | SURFACE PROFILE CONTROL OF EPITAXIAL REGIONS IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-04-30 | — | — | US | disclosed |
| US-12613372-B2 | Low scattering loss high temperature stable fiber Bragg grating sensor based on micropore formation and method for producing same | NATIONAL RESEARCH COUNCIL OF CANADA (CA) | 2026-04-28 | — | — | US | disclosed |
| US-12610578-B2 | Work function control in gate structures | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2026-04-21 | — | — | US | disclosed |
| US-12604503-B2 | Profile control of isolation structures in semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-04-14 | — | — | US | disclosed |
| US-12598797-B2 | Gate spacers in semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-04-07 | — | — | US | disclosed |
| US-20260096144-A1 | BACKSIDE TRANSISTORS IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-04-02 | — | — | US | disclosed |
| US-12581725-B2 | Gate structures for semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-03-17 | — | — | US | disclosed |
| US-12575356-B2 | Edge profile control of integrated circuit chips | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-03-10 | — | — | US | disclosed |
| US-12553939-B2 | Interconnect structures in integrated circuit chips | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-02-17 | — | — | US | disclosed |
| US-12532523-B2 | Semiconductor devices with modulated gate structures | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-01-20 | — | — | US | disclosed |
| US-12532511-B2 | Barrier layers in semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-01-20 | — | — | US | disclosed |
| US-12532510-B2 | Profile control of isolation structures in semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-01-20 | — | — | US | disclosed |
| US-20260011043-A1 | EPITAXIAL STRUCTURES IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-01-08 | — | — | US | disclosed |
| US-12513952-B2 | Method for fabricating a semiconductor device including etching nanostructures | Taiwan Semiconducor Manufacturing Company, Ltd. (TW) | 2025-12-30 | — | — | US | disclosed |
| US-12513951-B2 | Gate structures in semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-12-30 | — | — | US | disclosed |
| US-12501687-B2 | Dual silicide layers in semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-12-16 | — | — | US | disclosed |
| US-20250369745-A1 | REDUNDANT CORE IN MULTICORE OPTICAL FIBER FOR SAFETY | INTUITIVE SURGICAL OPERATIONS (US) | 2025-12-04 | — | — | US | disclosed |
| US-20250366044-A1 | SEAM-TOP SEAL FOR DIELECTRICS | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-11-27 | — | — | US | disclosed |
| US-20250366007-A1 | ISOLATION STRUCTURES IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-11-27 | — | — | US | disclosed |
| US-20250366109-A1 | EPITAXIAL STRUCTURES IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-11-27 | — | — | US | disclosed |
| US-20250366172-A1 | TRANSISTORS WITH DIFFERENT DRIVE CURRENT CHARACTERISTICS IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) | 2025-11-27 | — | — | US | disclosed |
| US-20250366130-A1 | SPACER STRUCTURES IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-11-27 | — | — | US | disclosed |
| US-20250366054-A1 | PROFILES OF GATE STRUCTURES IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-11-27 | — | — | US | disclosed |
| US-20250366139-A1 | SPACER STRUCTURES IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-11-27 | — | — | US | disclosed |
| US-20250366076-A1 | STRESS LINERS IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-11-27 | — | — | US | disclosed |
| US-20250366123-A1 | SEMICONDUCTOR DEVICES WITH MODULATED GATE STRUCTURES | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-11-27 | — | — | US | disclosed |
| US-20250357357-A1 | SEMICONDUCTOR PACKAGE WITH INTEGRATED CIRCUIT CHIP COUPLERS | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-11-20 | — | — | US | disclosed |
| US-20250359211-A1 | GATE STRUCTURES IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-11-20 | — | — | US | disclosed |
| US-20250357184-A1 | ETCH PROFILE CONTROL OF ISOLATION TRENCH | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-11-20 | — | — | US | disclosed |
| US-20250355041-A1 | INTERCONNECT STRUCTURES IN INTEGRATED CIRCUIT CHIPS | Taiwan Serniconductor Manufacturing Company, Lid. (TW) | 2025-11-20 | — | — | US | disclosed |
| US-20250359178-A1 | PROFILE CONTROL OF ISOLATION STRUCTURES IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-11-20 | — | — | US | disclosed |
| US-20250359169-A1 | BARRIER LAYERS IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-11-20 | — | — | US | disclosed |
| US-20250357217-A1 | EDGE PROFILE CONTROL OF INTEGRATED CIRCUIT CHIPS | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-11-20 | — | — | US | disclosed |
| US-20250359257-A1 | SPACER STRUCTURES AND CONTACT STRUCTURES IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-11-20 | — | — | US | disclosed |
| US-20250357341-A1 | INTERCONNECT STRUCTURES WITH CONDUCTIVE CARBON LAYERS | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-11-20 | — | — | US | disclosed |
| US-20250331283-A1 | DUAL SILICIDE LAYERS IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-10-23 | — | — | US | disclosed |
| US-20250329574-A1 | ISOLATION STRUCTURES IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-10-23 | — | — | US | disclosed |
| US-20250331250-A1 | Gate Structures For Semiconductor Devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-10-23 | — | — | US | disclosed |
| US-20250329575-A1 | ISOLATION STRUCTURES IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-10-23 | — | — | US | disclosed |
| US-20250324730-A1 | Gate Oxide Structures in Semiconductor Devices | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, INC. (TW) | 2025-10-16 | — | — | US | disclosed |
| US-12444645-B2 | Etch profile control of isolation trench | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-10-14 | — | — | US | disclosed |
| US-12444680-B2 | Interconnect structures with conductive carbon layers | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-10-14 | — | — | US | disclosed |
| US-12439642-B2 | Seam-top seal for dielectrics | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-10-07 | — | — | US | disclosed |
| US-20250311264-A1 | DIELECTRIC STRUCTURES IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY. LTD. (TW) | 2025-10-02 | — | — | US | disclosed |
| US-20250309104-A1 | DELAMINATION CONTROL OF DIELECTRIC LAYERS OF INTEGRATED CIRCUIT CHIPS | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-10-02 | — | — | US | disclosed |
| US-20250301703-A1 | CHANNEL STRUCTURES IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-09-25 | — | — | US | disclosed |
| US-12426322-B2 | Core-shell nanostructures for semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-09-23 | — | — | US | disclosed |
| US-12417941-B2 | Isolation structures in semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | 2025-09-16 | — | — | US | disclosed |
| US-12419087-B2 | Gate structures for semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-09-16 | — | — | US | disclosed |
| US-20250287652-A1 | ISOLATION STRUCTURES IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-09-11 | — | — | US | disclosed |
| US-12411278-B2 | Redundant core in multicore optical fiber for safety | Intuitive Surgical Operations, Inc. (US) | 2025-09-09 | — | — | US | disclosed |
| US-12412775-B2 | Isolation structures in semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-09-09 | — | — | US | disclosed |
| US-20250280585-A1 | SEMICONDUCTOR STRUCTURE WITH METAL ION CAPTURE LAYER | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-09-04 | — | — | US | disclosed |
| US-20250280581-A1 | GATE SPACER STRUCTURES IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-09-04 | — | — | US | disclosed |
| US-20250275225-A1 | GATE STRUCTURES FOR SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-08-28 | — | — | US | disclosed |
| US-20250258334-A1 | METHOD OF LASER MODIFICATION OF AN OTPICAL FIBRE | OXFORD UNIVERSITY INNOVATION LIMITED (GB) | 2025-08-14 | — | — | US | disclosed |
| US-20250254976-A1 | MULTI-FUNCTIONAL TRANSISTORS IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-08-07 | — | — | US | disclosed |
| US-20250246551-A1 | Conductive Structures and Dielectric Structures in Interconnect Structures | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-07-31 | — | — | US | disclosed |
| CN-120349339-A | Chiral germanium boron compound and synthesis method thereof | 淮北师范大学 | 2025-07-22 | — | — | CN | disclosed |
| US-12369385-B2 | Plural gate oxide structures with different thicknesses in semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-07-22 | — | — | US | disclosed |
| CN-120349339-A | Chiral germanium boron compound and synthesis method thereof | 淮北师范大学 | 2025-07-22 | — | — | CN | disclosed |
| US-20250234629-A1 | Contact Structures in Semiconductor Devices | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-07-17 | — | — | US | disclosed |
| US-20250234602-A1 | Contact Structures in Semiconductor Devices | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-07-17 | — | — | US | disclosed |
| US-12363933-B2 | Dielectric structures in semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | 2025-07-15 | — | — | US | disclosed |
| US-12354946-B2 | Delamination control of dielectric layers of integrated circuit chips | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | 2025-07-08 | — | — | US | disclosed |
| US-12349427-B2 | Gate structures for semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-07-01 | — | — | US | disclosed |
| US-20250203940-A1 | Profiles Of Gate Structures In Semiconductor Devices | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-06-19 | — | — | US | disclosed |
| US-20250201630-A1 | SEMICONDUCTOR DEVICES WITH A NITRIDED CAPPING LAYER | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-06-19 | — | — | US | disclosed |
| US-20250203941-A1 | GATE STRUCTURE PROFILES IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-06-19 | — | — | US | disclosed |
| US-12336256-B2 | Semiconductor structure with metal ion capture layer | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-06-17 | — | — | US | disclosed |
| US-12328930-B2 | Gate structures for semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-06-10 | — | — | US | disclosed |
| CN-120129267-A | Semiconductor device and method for manufacturing the same | 台湾积体电路制造股份有限公司 | 2025-06-10 | — | — | CN | disclosed |
| US-20250185353-A1 | Transistors with Different Drive Current Characteristics in Semiconductor Devices | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) | 2025-06-05 | — | — | US | disclosed |
| CN-113345890-B | Semiconductor device and method for manufacturing semiconductor device | 台湾积体电路制造股份有限公司 | 2025-06-03 | — | — | CN | disclosed |
| US-12321007-B2 | Method of laser modification of an optical fibre | OXFORD UNIVERSITY INNOVATION LIMITED (GB) | 2025-06-03 | — | — | US | disclosed |
| US-20250176250-A1 | Gate Structures For Semiconductor Devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-05-29 | — | — | US | disclosed |
| US-12315863-B2 | Contact structures in semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-05-27 | — | — | US | disclosed |
| CN-120051169-A | Preparation method of pixel defining layer | 德山新勒克斯有限公司 | 2025-05-27 | — | — | CN | disclosed |
| CN-120051168-A | Preparation method of pixel defining layer | 德山新勒克斯有限公司 | 2025-05-27 | — | — | CN | disclosed |
| US-12310092-B2 | Multi-functional transistors in semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-05-20 | — | — | US | disclosed |
| US-12300718-B2 | Semiconductor devices with counter-doped nanostructures | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-05-13 | — | — | US | disclosed |
| CN-114846578-B | High boron hard mask material | 应用材料公司 | 2025-05-09 | — | — | CN | disclosed |
| CN-119947177-A | Semiconductor device and method of manufacturing the same | 台湾积体电路制造股份有限公司 | 2025-05-06 | — | — | CN | disclosed |
| CN-119894048-A | Contour of gate structure in semiconductor device | 台湾积体电路制造股份有限公司 | 2025-04-25 | — | — | CN | disclosed |
| CN-119855228-A | Gate structure profile in semiconductor device | 台湾积体电路制造股份有限公司 | 2025-04-18 | — | — | CN | disclosed |
| CN-119836183-A | Preparation method of pixel defining layer | 德山新勒克斯有限公司 | 2025-04-15 | — | — | CN | disclosed |
| US-20250113517-A1 | EPITAXIAL REGIONS IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-04-03 | — | — | US | disclosed |
| CN-119730675-A | Preparation method of pixel defining layer | 德山新勒克斯有限公司 | 2025-03-28 | — | — | CN | disclosed |
| CN-119698034-A | Semiconductor device and method of manufacturing the same | 台湾积体电路制造股份有限公司 | 2025-03-25 | — | — | CN | disclosed |
| US-12261082-B2 | Semiconductor devices with a nitrided capping layer | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-03-25 | — | — | US | disclosed |
| CN-119677384-A | Preparation method of pixel defining layer | 德山新勒克斯有限公司 | 2025-03-21 | — | — | CN | disclosed |
| CN-119677385-A | Preparation method of pixel defining layer | 德山新勒克斯有限公司 | 2025-03-21 | — | — | CN | disclosed |
| CN-222638983-U | Semiconductor device with a semiconductor device having a plurality of semiconductor chips | 台湾积体电路制造股份有限公司 | 2025-03-18 | — | — | CN | disclosed |
| US-20250081557-A1 | EPITAXIAL STRUCTURES IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-03-06 | — | — | US | disclosed |
| CN-119556393-A | Nonlinear chirped fiber grating preparation structure based on speed regulation and control | 北京工业大学 | 2025-03-04 | — | — | CN | disclosed |
| CN-112750828-B | Semiconductor device and method for manufacturing the same | 台湾积体电路制造股份有限公司 | 2025-03-04 | — | — | CN | disclosed |
| US-12243915-B2 | Graphene wrap-around contact | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-03-04 | — | — | US | disclosed |
| CN-119342884-B | Semiconductor structure and preparation method thereof | 安徽大学 | 2025-03-04 | — | — | CN | disclosed |
| CN-119497517-A | Preparation method of pixel defining layer | 德山新勒克斯有限公司 | 2025-02-21 | — | — | CN | disclosed |
| CN-119421858-A | Molecular sieve boron SSZ-113 | 雪佛龙美国公司 | 2025-02-11 | — | — | CN | disclosed |
| CN-119421430-A | Method for forming semiconductor device | 台湾积体电路制造股份有限公司 | 2025-02-11 | — | — | CN | disclosed |
| US-12218013-B2 | Gate structures for semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-02-04 | — | — | US | disclosed |
| US-12211918-B2 | Nanostructured channel regions for semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-01-28 | — | — | US | disclosed |
| US-20250031399-A1 | BARRIER LAYERS IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-01-23 | — | — | US | disclosed |
| CN-119342884-A | Semiconductor structure and preparation method thereof | 安徽大学 | 2025-01-21 | — | — | CN | disclosed |
| CN-119325258-A | Epitaxial structure in semiconductor device | 台湾积体电路制造股份有限公司 | 2025-01-17 | — | — | CN | disclosed |
| US-20250022956-A1 | STRESS LINERS IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-01-16 | — | — | US | disclosed |
| US-20250022802-A1 | Conductive Structures Of Integrated Circuits | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD (TW) | 2025-01-16 | — | — | US | disclosed |
| US-20250022925-A1 | Methods Of Forming Contact Structure In Semiconductor Devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-01-16 | — | — | US | disclosed |
| CN-119263622-A | Elliptical cladding optical fiber preparation method | 中国电子科技集团公司第四十六研究所 | 2025-01-07 | — | — | CN | disclosed |
| CN-119270422-A | Polarization maintaining optical fiber and preparation method thereof | 长飞光纤光缆股份有限公司 | 2025-01-07 | — | — | CN | disclosed |
| CN-119277905-A | Preparation method of pixel defining layer | 德山新勒克斯有限公司 | 2025-01-07 | — | — | CN | disclosed |
| US-12176401-B2 | Seam-filling of metal gates with Si-containing layers | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-12-24 | — | — | US | disclosed |
| CN-119156066-A | Preparation method of pixel defining layer | 德山新勒克斯有限公司 | 2024-12-17 | — | — | CN | disclosed |
| US-12166037-B2 | Isolation layers in stacked semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-12-10 | — | — | US | disclosed |
| US-20240395889-A1 | GRAPHENE WRAP-AROUND CONTACT | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-11-28 | — | — | US | disclosed |
| US-20240387636-A1 | GATE STRUCTURES FOR SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-11-21 | — | — | US | disclosed |
| US-20240387645-A1 | CONTACT STRUCTURES IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-11-21 | — | — | US | disclosed |
| US-20240387673-A1 | NANOSTRUCTURED CHANNEL REGIONS FOR SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-11-21 | — | — | US | disclosed |
| US-20240387647-A1 | SEAM-FILLING OF METAL GATES WITH SI-CONTAINING LAYERS | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-21 | — | — | US | disclosed |
| CN-118983337-A | Stress liner in semiconductor device | 台湾积体电路制造股份有限公司 | 2024-11-19 | — | — | CN | disclosed |
| US-20240379755-A1 | SEMICONDUCTOR DEVICES WITH COUNTER-DOPED NANOSTRUCTURES | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-11-14 | — | — | US | disclosed |
| CN-118943018-A | Semiconductor device and method for manufacturing the same | 台湾积体电路制造股份有限公司 | 2024-11-12 | — | — | CN | disclosed |
| CN-118919491-A | Semiconductor device and method for manufacturing the same | 台湾积体电路制造股份有限公司 | 2024-11-08 | — | — | CN | disclosed |
| US-12136570-B2 | Graphene layer for low resistance contacts and damascene interconnects | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-11-05 | — | — | US | disclosed |
| US-20240363421-A1 | Semiconductor Devices With A Rare Earth Metal Oxide Layer | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-10-31 | — | — | US | disclosed |
| US-20240363632-A1 | ISOLATION LAYERS IN STACKED SEMICONDUCTOR DEVICES | Taiwan Semiconductor Manufacuring Copany, Ltd. (TW) | 2024-10-31 | — | — | US | disclosed |
| US-12131955-B2 | Gate structures for semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-10-29 | — | — | US | disclosed |
| US-12132112-B2 | Work function control in gate structures | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | 2024-10-29 | — | — | US | disclosed |
| US-20240347636-A1 | Work Function Control In Gate Structures | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-10-17 | — | — | US | disclosed |
| US-20240347393-A1 | Gate Structures For Semiconductor Devices | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-10-17 | — | — | US | disclosed |
| US-20240332091-A1 | GATE STRUCTURES IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-10-03 | — | — | US | disclosed |
| US-20240332359-A1 | Gate Structures For Semiconductor Devices | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-10-03 | — | — | US | disclosed |
| US-20240332062-A1 | ETCH PROFILE CONTROL OF ISOLATION TRENCH | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-10-03 | — | — | US | disclosed |
| US-20240313064-A1 | GATE STRUCTURES IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-09-19 | — | — | US | disclosed |
| CN-114284216-B | Capacitor array structure, method of manufacturing the same, and semiconductor memory device | 长鑫存储技术有限公司 | 2024-09-13 | — | — | CN | disclosed |
| US-20240304687-A1 | SPACER STRUCTURES IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-09-12 | — | — | US | disclosed |
| US-20240297233-A1 | Barrier Layers in Semiconductor Devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-09-05 | — | — | US | disclosed |
| US-20240297239-A1 | GATE SPACERS IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-09-05 | — | — | US | disclosed |
| US-20240290836-A1 | Gate Structures For Semiconductor Devices | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-08-29 | — | — | US | disclosed |
| US-20240282859-A1 | Gate Contact And Via Structures In Semiconductor Devices | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-08-22 | — | — | US | disclosed |
| US-20240282627-A1 | Contact Structures In Semiconductor Devices | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-08-22 | — | — | US | disclosed |
| US-20240274662-A1 | PROFILE CONTROL OF ISOLATION STRUCTURES IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO, LTD. (TW) | 2024-08-15 | — | — | US | disclosed |
| US-12062576-B2 | Semiconductor devices with a rare earth metal oxide layer | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | 2024-08-13 | — | — | US | disclosed |
| US-12057478-B2 | Gate structures for semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-08-06 | — | — | US | disclosed |
| US-12057507-B2 | Method for manufacturing semiconductor device structure | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-08-06 | — | — | US | disclosed |
| US-12040219-B2 | Etch profile control of isolation trench | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-07-16 | — | — | US | disclosed |
| US-12027583-B2 | Gate structures for semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-07-02 | — | — | US | disclosed |
| CN-118263126-A | Semiconductor device and method for manufacturing the same | 台湾积体电路制造股份有限公司 | 2024-06-28 | — | — | CN | disclosed |
| US-20240213098-A1 | Gate Oxide Structures In Semiconductor Devices | Taiwan Semiconductor Manufacturing Company . Inc. (TW) | 2024-06-27 | — | — | US | disclosed |
| US-12002885-B2 | Gate contact and via structures in semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-06-04 | — | — | US | disclosed |
| US-11984356-B2 | Contact structures in semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-05-14 | — | — | US | disclosed |
| CN-116387482-B | Graphene anode material and preparation method thereof | 湖南金阳烯碳新材料股份有限公司 | 2024-05-07 | — | — | CN | disclosed |
| CN-117976835-A | Germanium-boron doped nano silicon material and preparation method and application thereof | 中国石油化工股份有限公司 | 2024-05-03 | — | — | CN | disclosed |
| CN-117976835-A | Germanium-boron doped nano silicon material and preparation method and application thereof | 中国石油化工股份有限公司 | 2024-05-03 | — | — | CN | disclosed |
| CN-117976835-A | Germanium-boron doped nano silicon material and preparation method and application thereof | 中国石油化工股份有限公司 | 2024-05-03 | — | — | CN | disclosed |
| EP-4119995-B1 | REDUNDANT CORE IN MULTICORE OPTICAL FIBER FOR SAFETY | INTUITIVE SURGICAL OPERATIONS (US) | 2024-05-01 | — | — | EP | disclosed |
| CN-117954327-A | Method for forming germanium-boron source and drain in FDSOI | 上海华力集成电路制造有限公司 | 2024-04-30 | — | — | CN | disclosed |
| CN-117954327-A | Method for forming germanium-boron source and drain in FDSOI | 上海华力集成电路制造有限公司 | 2024-04-30 | — | — | CN | disclosed |
| CN-117954327-A | Method for forming germanium-boron source and drain in FDSOI | 上海华力集成电路制造有限公司 | 2024-04-30 | — | — | CN | disclosed |
| US-11961766-B2 | Gate oxide structures in semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. | 2024-04-16 | — | — | US | disclosed |
| US-11948981-B2 | Seam-filling of metal gates with Si-containing layers | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-04-02 | — | — | US | disclosed |
| US-20240088227-A1 | Gate Structures For Semiconductor Devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-03-14 | — | — | US | disclosed |
| US-20240079483-A1 | ISOLATION STRUCTURES IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-03-07 | — | — | US | disclosed |
| US-20240071835-A1 | Gate Structures For Semiconductor Devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-02-29 | — | — | US | disclosed |
| US-11901242-B2 | Gate structures for semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-02-13 | — | — | US | disclosed |
| US-20240021680-A1 | Seam-Filling of Metal Gates with Si-Containing Layers | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-01-18 | — | — | US | disclosed |
| US-20240012195-A1 | LOW SCATTERING LOSS HIGH TEMPERATURE STABLE FIBER BRAGG GRATING SENSOR BASED ON MICROPORE FORMATION AND METHOD FOR PRODUCING SAME | NATIONAL RESEARCH COUNCIL OF CANADA (CA) | 2024-01-11 | — | — | US | disclosed |
| CN-117369041-A | Boron-germanium co-doped polarization-maintaining photosensitive fiber and preparation method thereof | 长飞光纤光缆股份有限公司 | 2024-01-09 | — | — | CN | disclosed |
| CN-117369041-A | Boron-germanium co-doped polarization-maintaining photosensitive fiber and preparation method thereof | 长飞光纤光缆股份有限公司 | 2024-01-09 | — | — | CN | disclosed |
| CN-117369041-A | Boron-germanium co-doped polarization-maintaining photosensitive fiber and preparation method thereof | 长飞光纤光缆股份有限公司 | 2024-01-09 | — | — | CN | disclosed |
| US-11869954-B2 | Nanostructured channel regions for semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-01-09 | — | — | US | disclosed |
| CN-117346677-A | Optical fiber interference type static strain sensor | 中国科学院半导体研究所 | 2024-01-05 | — | — | CN | disclosed |
| US-11862681-B2 | Gate structures for semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-01-02 | — | — | US | disclosed |
| US-11854906-B2 | Gate structures for semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-12-26 | — | — | US | disclosed |
| CN-117276343-A | Semiconductor device and method for manufacturing the same | 台湾积体电路制造股份有限公司 | 2023-12-22 | — | — | CN | disclosed |
| US-20230411455-A1 | Core-Shell Nanostructures For Semiconductor Devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-12-21 | — | — | US | disclosed |
| US-20230402508-A1 | Epitaxial Structures In Semiconductor Devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-12-14 | — | — | US | disclosed |
| US-20230395683-A1 | SEAM-TOP SEAL FOR DIELECTRICS | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-12-07 | — | — | US | disclosed |
| US-20230395685-A1 | NANOSTRUCTURED CHANNEL REGIONS FOR SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO, LTD. (TW) | 2023-12-07 | — | — | US | disclosed |
| US-11827158-B2 | Radome for vehicles | ZANINI AUTO GRUP, S.A. (ES) | 2023-11-28 | — | — | US | disclosed |
| US-20230377993-A1 | GATE STRUCTURES FOR SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-11-23 | — | — | US | disclosed |
| US-11824089-B2 | Core-shell nanostructures for semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-11-21 | — | — | US | disclosed |
| CN-111987096-B | Gate structure of semiconductor device and forming method thereof | 台湾积体电路制造股份有限公司 | 2023-11-17 | — | — | CN | disclosed |
| US-20230369456-A1 | SPACER STRUCTURES AND CONTACT STRUCTURES IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-11-16 | — | — | US | disclosed |
| US-20230352404-A1 | INTERCONNECT STRUCTURE PATTERN | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-11-02 | — | — | US | disclosed |
| US-20230343854-A1 | SPACER STRUCTURES IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-10-26 | — | — | US | disclosed |
| US-20230335603-A1 | Semiconductor Structure with Metal Ion Capture Layer | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-10-19 | — | — | US | disclosed |
| CN-116884917-A | Semiconductor device and method for manufacturing the same | 台湾积体电路制造股份有限公司 | 2023-10-13 | — | — | CN | disclosed |
| CN-113380873-B | Semiconductor device and method for manufacturing the same | 台湾积体电路制造股份有限公司 | 2023-10-10 | — | — | CN | disclosed |
| CN-116825809-A | Semiconductor device and method for manufacturing the same | 台湾积体电路制造股份有限公司 | 2023-09-29 | — | — | CN | disclosed |
| US-20230307285-A1 | ISOLATION STRUCTURES IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-09-28 | — | — | US | disclosed |
| US-20230290853-A1 | PROFILE CONTROL OF ISOLATION STRUCTURES IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-09-14 | — | — | US | disclosed |
| CN-116741834-A | Semiconductor device and method for manufacturing the same | 台湾积体电路制造股份有限公司 | 2023-09-12 | — | — | CN | disclosed |
| US-20230282749-A1 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE STRUCTURE | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-09-07 | — | — | US | disclosed |
| US-11742352-B2 | Vertical semiconductor device with steep subthreshold slope | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-08-29 | — | — | US | disclosed |
| CN-219610427-U | Semiconductor structure | 台湾积体电路制造股份有限公司 | 2023-08-29 | — | — | CN | disclosed |
| CN-116646332-A | Semiconductor structure and forming method thereof | 台湾积体电路制造股份有限公司 | 2023-08-25 | — | — | CN | disclosed |
| CN-113568090-B | Multi-core microstructure optical fiber for distributed sensing system | 艾菲博(宁波)光电科技有限责任公司 | 2023-08-22 | — | — | CN | disclosed |
| CN-219575611-U | Apparatus for edge profile control of integrated circuit chip | 台湾积体电路制造股份有限公司 | 2023-08-22 | — | — | CN | disclosed |
| CN-116581125-A | Semiconductor device and method of forming the same | 台湾积体电路制造股份有限公司 | 2023-08-11 | — | — | CN | disclosed |
| CN-116581027-A | Contour control of isolation structures in semiconductor devices | 台湾积体电路制造股份有限公司 | 2023-08-11 | — | — | CN | disclosed |
| CN-116564897-A | Semiconductor structure and forming method thereof | 台湾积体电路制造股份有限公司 | 2023-08-08 | — | — | CN | disclosed |
| CN-116435306-A | Semiconductor device and method of forming the same | 台湾积体电路制造股份有限公司 | 2023-07-14 | — | — | CN | disclosed |
| US-20230215808-A1 | SEMICONDUCTOR PACKAGE WITH INTEGRATED CIRCUIT CHIP COUPLERS | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-07-06 | — | — | US | disclosed |
| CN-116387482-A | Graphene anode material and preparation method thereof | 湖南金阳烯碳新材料股份有限公司 | 2023-07-04 | — | — | CN | disclosed |
| US-20230204852-A1 | REDUNDANT CORE IN MULTICORE OPTICAL FIBER FOR SAFETY | Intuitive Surgical Operations, Inc. | 2023-06-29 | — | — | US | disclosed |
| US-11688809-B2 | Semiconductor device structure | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-06-27 | — | — | US | disclosed |
| CN-116315650-A | Antenna housing for vehicle | 桑尼尼汽车集团股份有限公司 | 2023-06-23 | — | — | CN | disclosed |
| EP-4199086-A1 | CAPACITOR ARRAY STRUCTURE, MANUFACTURING METHOD THEREFOR, AND SEMICONDUCTOR STORAGE DEVICE | Changxin Memory Technologies, Inc. (CN) | 2023-06-21 | — | — | EP | disclosed |
| CN-116259650-A | Semiconductor structure and preparation method thereof | 长鑫存储技术有限公司 | 2023-06-13 | — | — | CN | disclosed |
| US-20230178475-A1 | DELAMINATION CONTROL OF DIELECTRIC LAYERS OF INTEGRATED CIRCUIT CHIPS | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-06-08 | — | — | US | disclosed |
| US-20230170258-A1 | EDGE PROFILE CONTROL OF INTEGRATED CIRCUIT CHIPS | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-06-01 | — | — | US | disclosed |
| US-20230160953-A1 | INTERCONNECT STRUCTURES IN INTEGRATED CIRCUIT CHIPS | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-05-25 | — | — | US | disclosed |
| CN-116093069-A | Integrated Circuit (IC) chip package and method of manufacturing the same | 台湾积体电路制造股份有限公司 | 2023-05-09 | — | — | CN | disclosed |
| CN-111856642-B | Multi-core optical fiber with redundant cores for safety | 直观外科手术操作公司 | 2023-04-25 | — | — | CN | disclosed |
| US-11624870-B2 | Redundant core in multicore optical fiber for safety | Intuitive Surgical Operations, Inc. (US) | 2023-04-11 | — | — | US | disclosed |
| CN-115810616-A | Integrated circuit chip package and method of manufacturing the same | 台湾积体电路制造股份有限公司 | 2023-03-17 | — | — | CN | disclosed |
| US-20230083093-A1 | METHOD OF LASER MODIFICATION OF AN OTPICAL FIBRE | OXFORD UNIVERSITY INNOVATION LIMITED (GB) | 2023-03-16 | — | — | US | disclosed |
| US-20230066265-A1 | ISOLATION LAYERS IN STACKED SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-03-02 | — | — | US | disclosed |
| US-20230038822-A1 | DUAL SILICIDE LAYERS IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-02-09 | — | — | US | disclosed |
| US-20230040346-A1 | GATE STRUCTURES IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-02-09 | — | — | US | disclosed |
| US-20230029002-A1 | Semiconductor Devices with a Nitrided Capping Layer | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-01-26 | — | — | US | disclosed |
| US-20230027676-A1 | Semiconductor Devices with Uniform Gate Regions | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-01-26 | — | — | US | disclosed |
| US-20230020731-A1 | SEMICONDUCTOR DEVICES WITH A RARE EARTH METAL OXIDE LAYER | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-01-19 | — | — | US | disclosed |
| US-20230014471-A1 | Seam-Filling of Metal Gates With Si-Containing Layers | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-01-19 | — | — | US | disclosed |
| US-20230015761-A1 | WORK FUNCTION CONTROL IN GATE STRUCTURES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-01-19 | — | — | US | disclosed |
| US-20230015886-A1 | Gate Oxide Structures In Semiconductor Devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-01-19 | — | — | US | disclosed |
| EP-4119995-A1 | REDUNDANT CORE IN MULTICORE OPTICAL FIBER FOR SAFETY | Intuitive Surgical Operations, Inc. (US) | 2023-01-18 | — | — | EP | disclosed |
| US-20230009144-A1 | DIELECTRIC STRUCTURES IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-01-12 | — | — | US | disclosed |
| US-20230009820-A1 | ISOLATION STRUCTURES IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-01-12 | — | — | US | disclosed |
| US-20230009077-A1 | CONTACT STRUCTURES IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-01-12 | — | — | US | disclosed |
| US-20230010280-A1 | INTERCONNECT STRUCTURES WITH CONDUCTIVE CARBON LAYERS | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-01-12 | — | — | US | disclosed |
| US-20220406666-A1 | MULTI-FUNCTIONAL TRANSISTORS IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-12-22 | — | — | US | disclosed |
| CN-115440803-A | Semiconductor device and method for manufacturing the same | 台湾积体电路制造股份有限公司 | 2022-12-06 | — | — | CN | disclosed |
| CN-115440594-A | Semiconductor device and method for manufacturing the same | 台湾积体电路制造股份有限公司 | 2022-12-06 | — | — | CN | disclosed |
| US-20220384599-A1 | NANOSTRUCTURED CHANNEL REGIONS FOR SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-12-01 | — | — | US | disclosed |
| CN-115376902-A | Seam filling of metal gates with Si-containing layers | 台湾积体电路制造股份有限公司 | 2022-11-22 | — | — | CN | disclosed |
| US-20220367627-A1 | GATE STRUCTURES FOR SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-11-17 | — | — | US | disclosed |
| US-20220359717-A1 | Semiconductor Devices with Modulated Gate Structures | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-11-10 | — | — | US | disclosed |
| CN-115287629-A | Semiconductor device and method for forming the same | 台湾积体电路制造股份有限公司 | 2022-11-04 | — | — | CN | disclosed |
| US-20220352311-A1 | Semiconductor Devices with Counter-Doped Nanostructures | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-11-03 | — | — | US | disclosed |
| US-20220336289-A1 | DOPANT PROFILE CONTROL IN GATE STRUCTURES FOR SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-10-20 | — | — | US | disclosed |
| CN-115207081-A | Method for forming semiconductor device | 台湾积体电路制造股份有限公司 | 2022-10-18 | — | — | CN | disclosed |
| US-11467337-B2 | Method of laser modification of an optical fibre | OXFORD UNIVERSITY INNOVATION LIMITED (GB) | 2022-10-11 | — | — | US | disclosed |
| US-20220320092-A1 | VERTICAL SEMICONDUCTOR DEVICE WITH STEEP SUBTHRESHOLD SLOPE | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-10-06 | — | — | US | disclosed |
| US-20220320284-A1 | GATE STRUCTURES FOR SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-10-06 | — | — | US | disclosed |
| EP-3742210-B1 | REDUNDANT CORE IN MULTICORE OPTICAL FIBER FOR SAFETY | INTUITIVE SURGICAL OPERATIONS (US) | 2022-10-05 | — | — | EP | disclosed |
| US-20220310800-A1 | Contact Structures in Semiconductor Devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-09-29 | — | — | US | disclosed |
| CN-115101474-A | Method for manufacturing semiconductor device | 台湾积体电路制造股份有限公司 | 2022-09-23 | — | — | CN | disclosed |
| US-20220301922-A1 | ETCH PROFILE CONTROL OF ISOLATION TRENCH | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-09-22 | — | — | US | disclosed |
| US-11444198-B2 | Work function control in gate structures | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. | 2022-09-13 | — | — | US | disclosed |
| US-20220285515-A1 | GRAPHENE WRAP-AROUND CONTACT | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-09-08 | — | — | US | disclosed |
| US-20220285221-A1 | GRAPHENE LAYER FOR LOW RESISTANCE CONTACTS AND DAMASCENE INTERCONNECTS | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-09-08 | — | — | US | disclosed |
| CN-114975930-A | Silica anode material, preparation method thereof, secondary battery and power utilization device | 欣旺达电动汽车电池有限公司 | 2022-08-30 | — | — | CN | disclosed |
| US-11430701-B2 | Gate oxide structures in semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. | 2022-08-30 | — | — | US | disclosed |
| US-11417571-B2 | Dopant profile control in gate structures for semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. | 2022-08-16 | — | — | US | disclosed |
| US-20220254927-A1 | GATE CONTACT AND VIA STRUCTURES IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANFACTURING CO., LTD. (TW) | 2022-08-11 | — | — | US | disclosed |
| US-20220254684-A1 | CONTACT STRUCTURES IN SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-08-11 | — | — | US | disclosed |
| US-11411071-B1 | Capacitor array structure and method for manufacturing a capacitor array structure, and semiconductor memory device | CHANGXIN MEMORY TECHNOLOGIES, INC. (CN) | 2022-08-09 | — | — | US | disclosed |
| CN-114792684-A | Semiconductor device and method for forming the same | 台湾积体电路制造股份有限公司 | 2022-07-26 | — | — | CN | disclosed |
| US-20220223478-A1 | GATE STRUCTURES FOR SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-07-14 | — | — | US | disclosed |
| US-11374090-B2 | Gate structures for semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. | 2022-06-28 | — | — | US | disclosed |
| CN-114649265-A | Contact structure in semiconductor device | 台湾积体电路制造股份有限公司 | 2022-06-21 | — | — | CN | disclosed |
| CN-114649266-A | Gate contact structure and gate via structure in semiconductor device | 台湾积体电路制造股份有限公司 | 2022-06-21 | — | — | CN | disclosed |
| US-11359939-B2 | Low insertion loss high temperature stable fiber Bragg grating sensor and method for producing same | NATIONAL RESEARCH COUNCIL OF CANADA (CA) | 2022-06-14 | — | — | US | disclosed |
| CN-109216913-B | Antenna cover for vehicle | 桑尼尼汽车集团股份公司 | 2022-06-10 | — | — | CN | disclosed |
| WO-2022118062-A1 | LOW SCATTERING LOSS HIGH TEMPERATURE STABLE FIBER BRAGG GRATING SENSOR BASED ON MICROPORE FORMATION AND METHOD FOR PRODUCING SAME | NATIONAL RESEARCH COUNCIL OF CANADA (CA) | 2022-06-09 | — | — | WO | disclosed |
| US-11348920-B2 | Vertical semiconductor device with steep subthreshold slope | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-05-31 | — | — | US | disclosed |
| US-20220149155-A1 | CORE-SHELL NANOSTRUCTURES FOR SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-05-12 | — | — | US | disclosed |
| US-11295989-B2 | Gate structures for semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. | 2022-04-05 | — | — | US | disclosed |
| US-20220102218-A1 | Gate Oxide Structures in Semiconductor Devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-03-31 | — | — | US | disclosed |
| WO-2022062545-A1 | CAPACITOR ARRAY STRUCTURE, MANUFACTURING METHOD THEREFOR, AND SEMICONDUCTOR STORAGE DEVICE | 长鑫存储技术有限公司 | 2022-03-31 | — | — | WO | disclosed |
| US-11289334-B2 | Epitaxial wafer including boron and germanium and method of fabricating the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2022-03-29 | — | — | US | disclosed |
| CN-109565103-B | Antenna cover for vehicle | 桑尼尼汽车集团股份公司 | 2022-03-01 | — | — | CN | disclosed |
| US-11233119-B2 | Core-shell nanostructures for semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. | 2022-01-25 | — | — | US | disclosed |
| CN-113921469-A | Semiconductor device and method for manufacturing the same | 台湾积体电路制造股份有限公司 | 2022-01-11 | — | — | CN | disclosed |
| US-20210391225-A1 | GATE STRUCTURES FOR SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-12-16 | — | — | US | disclosed |
| US-20210391220-A1 | DOPANT PROFILE CONTROL IN GATE STRUCTURES FOR SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-12-16 | — | — | US | disclosed |
| CN-112194674-B | Cage germanium boron and germanium silicon compound and preparation method thereof | 中国科学技术大学 | 2021-12-14 | — | — | CN | disclosed |
| CN-112194674-B | Cage germanium boron and germanium silicon compound and preparation method thereof | 中国科学技术大学 | 2021-12-14 | — | — | CN | disclosed |
| US-20210376138-A1 | WORK FUNCTION CONTROL IN GATE STRUCTURES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-12-02 | — | — | US | disclosed |
| US-20210375698-A1 | GATE STRUCTURES FOR SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-12-02 | — | — | US | disclosed |
| US-20210366785-A1 | GATE STRUCTURES FOR SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-11-25 | — | — | US | disclosed |
| EP-3482453-B1 | RADOME FOR VEHICLES | ZANINI AUTO GRUP SA (ES) | 2021-11-24 | — | — | EP | disclosed |
| CN-113594250-A | Transistor structure | 台湾积体电路制造股份有限公司 | 2021-11-02 | — | — | CN | disclosed |
| US-20210328018-A1 | GATE STRUCTURES FOR SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-10-21 | — | — | US | disclosed |
| US-11128037-B2 | Radome for vehicles | ZANINI AUTO GRUP, S.A. (ES) | 2021-09-21 | — | — | US | disclosed |
| CN-113380873-A | Semiconductor device and method for manufacturing the same | 台湾积体电路制造股份有限公司 | 2021-09-10 | — | — | CN | disclosed |
| CN-113345890-A | Semiconductor device and method for manufacturing semiconductor device | 台湾积体电路制造股份有限公司 | 2021-09-03 | — | — | CN | disclosed |
| CN-113270403-A | Semiconductor device and method of manufacture | 台湾积体电路制造股份有限公司 | 2021-08-17 | — | — | CN | disclosed |
| CN-113270371-A | Method for manufacturing semiconductor element | 台湾积体电路制造股份有限公司 | 2021-08-17 | — | — | CN | disclosed |
| US-11088034-B2 | Gate structures for semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. | 2021-08-10 | — | — | US | disclosed |
| US-20210234036-A1 | SEMICONDUCTOR DEVICE STRUCTURE | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-07-29 | — | — | US | disclosed |
| US-11049937-B2 | Gate structures for semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. | 2021-06-29 | — | — | US | disclosed |
| US-20210134951-A1 | GATE STRUCTURES FOR SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-05-06 | — | — | US | disclosed |
| CN-112750828-A | Semiconductor device and method for manufacturing the same | 台湾积体电路制造股份有限公司 | 2021-05-04 | — | — | CN | disclosed |
| US-20210118995-A1 | GATE STRUCTURES FOR SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-04-22 | — | — | US | disclosed |
| US-10985277-B2 | Method for forming semiconductor device structure | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-04-20 | — | — | US | disclosed |
| US-20210028172-A1 | VERTICAL SEMICONDUCTOR DEVICE WITH STEEP SUBTHRESHOLD SLOPE | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-01-28 | — | — | US | disclosed |
| US-10873129-B2 | Radome for vehicles | ZANINI AUTO GRUP, S.A. (ES) | 2020-12-22 | — | — | US | disclosed |
| US-20200373206-A1 | GATE STRUCTURES FOR SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-11-26 | — | — | US | disclosed |
| CN-111987096-A | Gate structure of semiconductor device and forming method thereof | 台湾积体电路制造股份有限公司 | 2020-11-24 | — | — | CN | disclosed |
| US-10804268-B2 | Vertical gate semiconductor device with steep subthreshold slope | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-10-13 | — | — | US | disclosed |
| US-10784106-B2 | Selective film growth for bottom-up gap filling | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-09-22 | — | — | US | disclosed |
| US-20200259014-A1 | METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-08-13 | — | — | US | disclosed |
| US-10718711-B1 | Fiber optic sensing apparatus, system, and method of use thereof | JINAN UNIVERSITY (CN) | 2020-07-21 | — | — | US | disclosed |
| US-10636910-B2 | Semiconductor device structure and method of forming the same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-04-28 | — | — | US | disclosed |
| US-20200043730-A1 | Selective Film Growth for Bottom-Up Gap Filling | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-02-06 | — | — | US | disclosed |
| US-10504723-B2 | Method and apparatus for selective epitaxy | APPLIED MATERIALS, INC. (US) | 2019-12-10 | — | — | US | disclosed |
| CN-106957146-B | A kind of photosensitive glass material and preparation method | 合肥协耀玻璃制品有限公司 | 2019-10-08 | — | — | CN | disclosed |
| US-20190305411-A1 | RADOME FOR VEHICLES | ZANINI AUTO GRUP, S.A. (ES) | 2019-10-03 | — | — | US | disclosed |
| US-20190267376-A1 | VERTICAL GATE SEMICONDUCTOR DEVICE WITH STEEP SUBTHRESHOLD SLOPE | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2019-08-29 | — | — | US | disclosed |
| CN-109974789-A | A kind of high integration mini optical fibre seawater thermohaline depth sensor based on MEMS technology and membrane material | 天津工业大学 | 2019-07-05 | — | — | CN | disclosed |
| CN-109804503-A | Antenna housing for vehicle | 桑尼尼汽车集团股份有限公司 | 2019-05-24 | — | — | CN | disclosed |
| US-20190143909-A1 | RADOME FOR VEHICLES | ZANNI AUTO GRUP, S.A. (ES) | 2019-05-16 | — | — | US | disclosed |
| EP-3482453-A1 | RADOME FOR VEHICLES | Zanini Auto Grup, S.A. (ES) | 2019-05-15 | — | — | EP | disclosed |
| US-10269800-B2 | Vertical gate semiconductor device with steep subthreshold slope | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2019-04-23 | — | — | US | disclosed |
| EP-3469655-A1 | RADOME FOR VEHICLES | Zanini Auto Grup, S.A. (ES) | 2019-04-17 | — | — | EP | disclosed |
| US-20190109004-A1 | Selective Film Growth for Bottom-Up Gap Filling | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2019-04-11 | — | — | US | disclosed |
| CN-109565103-A | Antenna house for vehicle | 桑尼尼汽车集团股份公司 | 2019-04-02 | — | — | CN | disclosed |
| CN-109445018-A | Regenerate the preparation method and system of dim light grid array | 武汉理工大学 | 2019-03-08 | — | — | CN | disclosed |
| CN-109427591-A | Semiconductor devices and forming method thereof | 台湾积体电路制造股份有限公司 | 2019-03-05 | — | — | CN | disclosed |
| CN-109216913-A | Antenna house for vehicle | 桑尼尼汽车集团股份公司 | 2019-01-15 | — | — | CN | disclosed |
| US-20190013576-A1 | RADOME FOR VEHICLES | ZANINI AUTO GRUP, S.A. (ES) | 2019-01-10 | — | — | US | disclosed |
| EP-3425730-A1 | RADOME FOR VEHICLES | Zanini Auto Grup, S.A. (ES) | 2019-01-09 | — | — | EP | disclosed |
| US-10170305-B1 | Selective film growth for bottom-up gap filling | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2019-01-01 | — | — | US | disclosed |
| CN-108962875-A | Dielectric barrier and its manufacturing method, interconnection structure and its manufacturing method | 中芯国际集成电路制造(上海)有限公司 | 2018-12-07 | — | — | CN | disclosed |
| US-20180350969-A1 | SEMICONDUCTOR DEVICE STRUCTURE AND METHOD OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2018-12-06 | — | — | US | disclosed |
| US-20180342516-A1 | VERTICAL GATE SEMICONDUCTOR DEVICE WITH STEEP SUBTHRESHOLD SLOPE | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2018-11-29 | — | — | US | disclosed |
| US-10115723-B2 | Complementary metal oxide semiconductor (CMOS) devices employing plasma-doped source/drain structures and related methods | QUALCOMM INCORPORATED (US) | 2018-10-30 | — | — | US | disclosed |
| CN-104678486-B | A kind of preparation method of fiber grating | 武汉烽理光电技术有限公司 | 2018-09-04 | — | — | CN | disclosed |
| US-20180190489-A1 | METHOD AND APPARATUS FOR SELECTIVE EPITAXY | APPLIED MATERIALS, INC. | 2018-07-05 | — | — | US | disclosed |
| US-20180132055-A1 | Vertical system integration | LEEDY GLENN J (US) | 2018-05-10 | — | — | US | disclosed |
| US-20180132056-A1 | Vertical system integration | LEEDY GLENN J (US) | 2018-05-10 | — | — | US | disclosed |
| CN-107907474-A | A kind of novel sensor and its manufacture method and implementation | 江苏科技大学 | 2018-04-13 | — | — | CN | disclosed |
| CN-107907474-A | A kind of novel sensor and its manufacture method and implementation | 江苏科技大学 | 2018-04-13 | — | — | CN | disclosed |
| CN-107785235-A | A kind of method that film is manufactured on substrate | 沈阳硅基科技有限公司 | 2018-03-09 | — | — | CN | disclosed |
| EP-2970524-B1 | TRIDENTATE NITROGEN BASED LIGANDS FOR OLEFIN POLYMERISATION CATALYSTS | UNIVATION TECH LLC (US) | 2018-03-07 | — | — | EP | disclosed |
| CN-107689396-A | Transistor and forming method thereof | 台湾积体电路制造股份有限公司 | 2018-02-13 | — | — | CN | disclosed |
| US-20170352662-A1 | COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) DEVICES EMPLOYING PLASMA-DOPED SOURCE/DRAIN STRUCTURES AND RELATED METHODS | QUALCOMM INCORPORATED | 2017-12-07 | — | — | US | disclosed |
| US-20170330876-A1 | Vertical system integration | LEEDY GLENN J (US) | 2017-11-16 | — | — | US | disclosed |
| CN-107108428-A | The method that fuel, gasoline additive and lubricant are prepared using amine catalyst | 加利福尼亚大学董事会 | 2017-08-29 | — | — | CN | disclosed |
| CN-102942189-B | Cs2geB4o9compound and monocrystal thereof | 中国科学院福建物质结构研究所 | 2016-08-17 | — | — | CN | disclosed |
| US-20160155722-A1 | Vertical system integration | LEEDY GLENN J (US) | 2016-06-02 | — | — | US | disclosed |
| US-9268983-B2 | Optical system and method for reading encoded microbeads | ILLUMINA, INC. (US) | 2016-02-23 | — | — | US | disclosed |
| CN-103606572-B | Mix germanium silicon substrate, its preparation method and comprise its solar cell | YINGLI GROUP LTD. (CN) | 2015-12-02 | — | — | CN | disclosed |
| CN-104678486-A | Preparation method of fiber grating | UNIV WUHAN TECH | 2015-06-03 | — | — | CN | disclosed |
| US-20140134950-A1 | Vertical System Integration | LEEDY GLENN J (US) | 2014-05-15 | — | — | US | disclosed |
| WO-2014070600-A1 | METHODS FOR SELECTIVE AND CONFORMAL EPITAXY OF HIGHLY DOPED SI-CONTAINING MATERIALS FOR THREE DIMENSIONAL STRUCTURES | MATHESON TRI-GAS, INC. (US) | 2014-05-08 | — | — | WO | disclosed |
| CN-103606572-A | A germanium-doped silicon substrate, a manufacturing method thereof and a solar cell comprising the germanium-doped silicon substrate | YINGLI GROUP LTD | 2014-02-26 | — | — | CN | disclosed |
| US-20140021639-A1 | Vertical System Integration | LEEDY GLENN J (US) | 2014-01-23 | — | — | US | disclosed |
| US-8587102-B2 | Vertical system integration | LEEDY GLENN J (US) | 2013-11-19 | — | — | US | disclosed |
| US-8565475-B2 | Optical system and method for reading encoded microbeads | ILLUMINA, INC. (US) | 2013-10-22 | — | — | US | disclosed |
| CN-103134775-A | Optical fiber liquid refractive index and temperature sensor | UNIV JILIANG CHINA | 2013-06-05 | — | — | CN | disclosed |
| US-8269327-B2 | Vertical system integration | LEEDY GLENN J (US) | 2012-09-18 | — | — | US | disclosed |
| CN-101859001-B | Silicon dioxide optical waveguide device based on B-Ge-codoped upper cladding and preparation method thereof | UNIV ZHEJIANG | 2012-06-27 | — | — | CN | disclosed |
| US-20120074225-A1 | OPTICAL SYSTEM AND METHOD FOR READING ENCODED MICROBEADS | ILLUMINA, INC. (US) | 2012-03-29 | — | — | US | disclosed |
| US-8080442-B2 | Vertical system integration | ELM TECHNOLOGY CORPORATION (US) | 2011-12-20 | — | — | US | disclosed |
| CN-101216574-B | Novel highly germanium-doped -type light-sensitive optical fibre and method for making same | YANGTZE OPTICAL FIBRE & CABLE | 2010-10-20 | — | — | CN | disclosed |
| CN-101859001-A | Silicon dioxide optical waveguide device based on B-Ge-codoped upper cladding and preparation method thereof | UNIV ZHEJIANG | 2010-10-13 | — | — | CN | disclosed |
| CN-101698566-A | Glass material with characteristics of ultraviolet light induced refractive index change and optical amplification | UNIV SOUTH CHINA TECH | 2010-04-28 | — | — | CN | disclosed |
| US-20090194768-A1 | Vertical system integration | LEEDY GLENN J | 2009-08-06 | — | — | US | disclosed |
| US-20090034078-A1 | OPTICAL IDENTIFICATION ELEMENT HAVING A NON-WAVEGUIDE SUBSTRATE | ILLUMINA, INC. (US) | 2009-02-05 | — | — | US | disclosed |
| US-20080284611-A1 | Vertical system integration | ELM TECHNOLOGY CORPORATION (US) | 2008-11-20 | — | — | US | disclosed |
| US-20080254572-A1 | Vertical system integration | ELM TECHNOLOGY CORPORATION (US) | 2008-10-16 | — | — | US | disclosed |
| US-20080251941-A1 | Vertical system integration | ELM TECHNOLOGY CORPORATION (US) | 2008-10-16 | — | — | US | disclosed |
| US-7433123-B2 | Optical identification element having non-waveguide photosensitive substrate with diffraction grating therein | ILLUMINA, INC. (US) | 2008-10-07 | — | — | US | disclosed |
| US-20080237591-A1 | Vertical system integration | ELM TECHNOLOGY CORPORATION (US) | 2008-10-02 | — | — | US | disclosed |
| US-7402897-B2 | Vertical system integration | ELM TECHNOLOGY CORPORATION (US) | 2008-07-22 | — | — | US | disclosed |
| CN-101216574-A | Novel highly germanium-doped -type light-sensitive optical fibre and method for making same | YANGTZE OPTICAL FIBRE & CABLE (CN) | 2008-07-09 | — | — | CN | disclosed |
| US-20070054460-A1 | SYSTEM AND METHOD FOR PROVIDING A NANOSCALE, HIGHLY SELECTIVE, AND THERMALLY RESILIENT SILICON, GERMANIUM, OR SILICON-GERMANIUM ETCH-STOP | ATMEL CORPORATION (US) | 2007-03-08 | — | — | US | disclosed |
| US-7079740-B2 | Use of amorphous carbon film as a hardmask in the fabrication of optical waveguides | APPLIED MATERIALS, INC. (US) | 2006-07-18 | — | — | US | disclosed |
| CN-1239421-C | Glass material with photosensitivity | UNIV SOUTH CHINA TECH (CN) | 2006-02-01 | — | — | CN | disclosed |
| US-20050220408-A1 | Optical identification element having non-waveguide photosensitive substrate with diffraction grating therein | CYVERA CORPORATION | 2005-10-06 | — | — | US | disclosed |
| US-20050199013-A1 | Use of amorphous carbon film as a hardmask in the fabrication of optical waveguides | APPLIED MATERIALS, INC. | 2005-09-15 | — | — | US | disclosed |
| CN-1594162-A | Glass material with photosensitivity | UNIV SOUTH CHINA TECH (CN) | 2005-03-16 | — | — | CN | disclosed |
| US-20050023656-A1 | Vertical system integration | ELM TECHNOLOGY CORPORATION | 2005-02-03 | — | — | US | disclosed |
| US-6834142-B2 | Optical grating-based filter | CIDRA CORPORATION | 2004-12-21 | — | — | US | disclosed |
| US-6778737-B2 | Optical waveguide with spot size changing core structure and method for manufacturing the same | NEC CORPORATION (JP) | 2004-08-17 | — | — | US | disclosed |
| WO-2004015764-A2 | VERTICAL SYSTEM INTEGRATION | LEEDY GLENN J (US) | 2004-02-19 | — | — | WO | disclosed |
| WO-2003107053-A1 | OPTICAL WAVEGUIDE GRATING DEVICE AND SENSORS UTILISING THE DEVICE | ASTON PHOTONIC TECHNOLOGIES LIMITED (GB) | 2003-12-24 | — | — | WO | disclosed |
| EP-1372006-A1 | Optical waveguide grating device and sensors utilising the device | Aston Photonic Technologies Ltd. (GB) | 2003-12-17 | — | — | EP | disclosed |
| US-20030185509-A1 | Optical grating-based filter | II-VI DELAWARE, INC. | 2003-10-02 | — | — | US | disclosed |
| CN-1421712-A | Fibre equipment with improved optical grating producing and working character | FITEL AMERICA INC (US) | 2003-06-04 | — | — | CN | disclosed |
| US-20030044154-A1 | Oxide structure useable for optical waveguide and method of forming the oxide structure | ASML US, INC. | 2003-03-06 | — | — | US | disclosed |
| EP-1281987-A2 | Oxide structure useable for optical waveguide and method of forming the oxide structure | ASML US, Inc. (US) | 2003-02-05 | — | — | EP | disclosed |
| US-20020146205-A1 | Optical waveguide with spot size changing core structure and method for manufacturing the same | NEC CORPORATION | 2002-10-10 | — | — | US | disclosed |
| WO-2002075391-A2 | OPTICAL GRATING-BASED FILTER | CIDRA CORPORATION (DE) | 2002-09-26 | — | — | WO | disclosed |
| US-6337027-B1 | Microelectromechanical device manufacturing process | ROCKWELL SCIENCE CENTER, LLC | 2002-01-08 | — | — | US | disclosed |
| US-6138606-A | Ion implanters for implanting shallow regions with ion dopant compounds containing elements of high solid solubility | ADVANCED MATERIALS ENGINEERING RESEARCH, INC. (US) | 2000-10-31 | — | — | US | disclosed |
| US-5913123-A | Manufacturing method for deep-submicron P-type metal-oxide semiconductor shallow junction | NATIONAL SCIENCE COUNCIL (TW) | 1999-06-15 | — | — | US | disclosed |
| JP-H10111220-A | METHOD FOR ANALYZING ELEMENT IN ALCOHOL | TOKUYAMA CORP | 1998-04-28 | — | — | JP | disclosed |
| US-5617493-A | Waveguide type optical control device with properties of suppressed DC drift, reduced driving voltage and high speed operation | NEC CORPORATION (JP) | 1997-04-01 | — | — | US | disclosed |
| JP-H04224685-A | PRODUCTION OF GALVANIZED STEEL SHEET EXCELLENT IN-LOW-TEMPERATURE CHIPPING RESISTANCE AND PITTING CORROSION RESISTANCE | NIPPON STEEL CORP | 1992-08-13 | — | — | JP | disclosed |
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| US-4435445-A | PRODUCTION OF SILICON-GERMANIUM ALLOY FILM FROM SILANE AND GERMANE | ENERGY CONVERSION DEVICES, INC. (US) | 1984-03-06 | — | — | US | disclosed |
| US-4435445-A | PRODUCTION OF SILICON-GERMANIUM ALLOY FILM FROM SILANE AND GERMANE | ENERGY CONVERSION DEVICES, INC. (US) | 1984-03-06 | — | — | US | disclosed |