SCHEMBL8740967

SCHEMBL8740967

CC[Si](OC)(OC)N(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11325704 0.77
SCHEMBL724460 0.73
SCHEMBL17805177 0.73 LMNA (0.32)
SCHEMBL452751 0.69 MEN1 (0.31)
SCHEMBL231599 0.69
SCHEMBL4215260 0.69
SCHEMBL4217688 0.69
SCHEMBL4537416 0.66
SCHEMBL35289 0.58
SCHEMBL2103891 0.58

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240170282-A1 METHOD AND SYSTEM FOR TUNING PHOTORESIST ADHESION LAYER PROPERTIES ASM IP HOLDING B.V. (NL) 2024-05-23 US claimed
CN-117995660-A Method and system for adjusting properties of photoresist adhesion layer ASM IP私人控股有限公司 2024-05-07 CN claimed
CN-116949433-A Method and system for forming silicon oxycarbide layer and structure formed using the same ASM IP私人控股有限公司 2023-10-27 CN claimed
US-20230340663-A1 PLASMA-ENHANCED METHOD AND SYSTEM FOR FORMING A SILICON OXYCARBIDE LAYER AND STRUCTURE FORMED USING SAMEPLASMA-ENHANCED METHOD AND SYSTEM FOR FORMING A SILICON OXYCARBIDE LAYER AND STRUCTURE FORMED USING SAME ASM IP HOLDING B.V. (NL) 2023-10-26 US claimed
US-20240170282-A1 METHOD AND SYSTEM FOR TUNING PHOTORESIST ADHESION LAYER PROPERTIES ASM IP HOLDING B.V. (NL) 2024-05-23 US disclosed
CN-116949433-A Method and system for forming silicon oxycarbide layer and structure formed using the same ASM IP私人控股有限公司 2023-10-27 CN disclosed
US-20230340663-A1 PLASMA-ENHANCED METHOD AND SYSTEM FOR FORMING A SILICON OXYCARBIDE LAYER AND STRUCTURE FORMED USING SAMEPLASMA-ENHANCED METHOD AND SYSTEM FOR FORMING A SILICON OXYCARBIDE LAYER AND STRUCTURE FORMED USING SAME ASM IP HOLDING B.V. (NL) 2023-10-26 US disclosed
US-20230340663-A1 PLASMA-ENHANCED METHOD AND SYSTEM FOR FORMING A SILICON OXYCARBIDE LAYER AND STRUCTURE FORMED USING SAMEPLASMA-ENHANCED METHOD AND SYSTEM FOR FORMING A SILICON OXYCARBIDE LAYER AND STRUCTURE FORMED USING SAME ASM IP HOLDING B.V. (NL) 2023-10-26 US disclosed
US-5612438-A Curable siloxane polymers containing integral UV absorbers GENERAL ELECTRIC COMPANY (US) 1997-03-18 US disclosed
EP-0598545-A2 Curable siloxane polymers GENERAL ELECTRIC COMPANY (US) 1994-05-25 EP disclosed
US-5310845-A Adding an amine catalyst to a solution of cosolvent-diluted silyated UV agent and polysiloxane/solvent mixture GENERAL ELECTRIC COMPANY (US) 1994-05-10 US disclosed
US-4483973-A Adhesion promoters for one-component RTV silicone compositions GENERAL ELECTRIC COMPANY (US) 1984-11-20 US disclosed
US-4304805-A Sealing leaks by polymerization of volatilized aminosilane monomers Packo, Joseph J. (US) 1981-12-08 US disclosed