SCHEMBL2103891

SCHEMBL2103891

CC[Si](N(C)C)(N(C)C)N(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2099907 0.79
SCHEMBL2100103 0.79
SCHEMBL2058729 0.70
SCHEMBL20377925 0.70
SCHEMBL2100322 0.69
SCHEMBL20499830 0.69
SCHEMBL2103247 0.67
SCHEMBL972471 0.67
SCHEMBL510702 0.67
SCHEMBL2101366 0.64

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 225 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12421603-B2 Composition for high temperature atomic layer deposition of high quality silicon oxide thin films VERSUM MATERIALS US, LLC (US) 2025-09-23 US claimed
CN-119900018-A Composition for high temperature atomic layer deposition of high quality silicon oxide films 弗萨姆材料美国有限责任公司 2025-04-29 CN claimed
CN-113680338-B Novel chromatographic material and preparation method thereof 天津博蕴纯化装备材料科技有限公司 2024-06-04 CN claimed
EP-4358119-A2 IMPROVED SELF-ASSEMBLED MONOLAYER BLOCKING WITH INTERMITTENT AIR-WATER EXPOSURE Applied Materials, Inc. (US) 2024-04-24 EP claimed
CN-117334560-A Improved self-assembled monolayer blocking with intermittent air-water exposure 应用材料公司 2024-01-02 CN claimed
CN-109075021-B Improved self-assembled monolayer blocking with intermittent air-water exposure 应用材料公司 2023-09-05 CN claimed
US-11649547-B2 Deposition of carbon doped silicon oxide VERSUM MATERIALS US, LLC (US) 2023-05-16 US claimed
US-11631580-B2 Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials VERSUM MATERIALS US, LLC (US) 2023-04-18 US claimed
CN-110573651-B Formulations for depositing silicon doped hafnium oxide as ferroelectric material 弗萨姆材料美国有限责任公司 2022-07-22 CN claimed
US-20220189767-A1 FORMULATION FOR DEPOSITION OF SILICON DOPED HAFNIUM OXIDE AS FERROELECTRIC MATERIALS VERSUM MATERIALS US, LLC (US) 2022-06-16 US claimed
WO-2018170126-A1 NEW FORMULATION FOR DEPOSITION OF SILICON DOPED HAFNIUM OXIDE AS FERROELECTRIC MATERIALS VERSUM MATERIALS US, LLC (US) 2018-09-20 WO claimed
US-20170256402-A1 SELF-ASSEMBLED MONOLAYER BLOCKING WITH INTERMITTENT AIR-WATER EXPOSURE APPLIED MATERIALS, INC. 2017-09-07 US claimed
US-20130295779-A1 HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF SILICON OXIDE THIN FILMS VERSUM MATERIALS US, LLC 2013-11-07 US claimed
EP-2650399-A2 High temperature atomic layer deposition of silicon oxide thin films AIR PRODUCTS AND CHEMICALS, INC. (US) 2013-10-16 EP claimed
EP-0671483-B1 Method for vapor deposition of a ceramic coating using a steam-containing carrier gas and non-alkoxy silane precursors ENICHEM SPA (IT) 1997-12-29 EP claimed
EP-0671483-A1 Ceramic vapor deposited coating using a steam-containing carrier gas and non-alkoxy silane precursors ENICHEM S.p.A. (IT) 1995-09-13 EP claimed
US-5424095-A Decomposing organosilicon precursor inside chemical reactor to form film of ceramic material on surface; prevents coking ENIRICERCHE S.P.A. (IT) 1995-06-13 US claimed
EP-0189839-B1 PROCESS FOR PREPARING TRIACETOXYSILANES FORM TRIS(AMINO)SILANES UNION CARBIDE CORPORATION (US) 1989-03-15 EP claimed
EP-0189839-A1 Process for preparing triacetoxysilanes form tris(amino)silanes UNION CARBIDE CORPORATION (US) 1986-08-06 EP claimed
US-4556725-A Process for preparing triacetoxysilanes from tris(amino)silanes UNION CARBIDE CORPORATION (US) 1985-12-03 US claimed