SCHEMBL892216

SCHEMBL892216

CC[CH]CC12CC3CC(CC(C3)C1)C2

nearest known ligand 0.42

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
GRIN2D O15399 5/20 0.42
GRIN3B O60391 5/20 0.42
GRIN1 Q05586 5/20 0.42
GRIN2A Q12879 5/20 0.42
GRIN2B Q13224 5/20 0.42
GRIN2C Q14957 5/20 0.42
GRIN3A Q8TCU5 5/20 0.42
ALDH1A1 P00352 3/20 0.36
KMT2A Q03164 4/20 0.35
MEN1 O00255 3/20 0.35
HSD17B10 Q99714 1/20 0.34
HSD11B1 P28845 1/20 0.33
TSHR P16473 1/20 0.33
L3MBTL1 Q9Y468 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4304613 0.82 GRIN2D (0.39) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL892133 0.79
SCHEMBL4301887 0.79 EPHX2 (0.39) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL3656833 0.75 GRIN2D (0.46) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL7731543 0.74 GRIN2D (0.48) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL891928 0.71
SCHEMBL8053022 0.71 GRIN2D (0.42) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL451246 0.71 GRIN2D (0.56) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL451248 0.71 GRIN2D (0.56) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL9537877 0.70 GRIN2D (0.46) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 42 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9312127-B2 Method for producing semiconductor apparatus substrate SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-04-12 US disclosed
US-20160064220-A1 METHOD FOR PRODUCING SEMICONDUCTOR APPARATUS SUBSTRATE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-03-03 US disclosed
US-9261783-B2 Fluorinated ester monomer, making method, fluorinated ester polymer, and difluorohydroxycarboxylic acid SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-02-16 US disclosed
US-8933251-B2 Fluorinated monomer of cyclic acetal structure, polymer, resist protective coating composition, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-01-13 US disclosed
US-8791288-B2 Acid-labile ester monomer having spirocyclic structure, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-07-29 US disclosed
US-8722307-B2 Near-infrared absorptive layer-forming composition and multilayer film comprising near-infrared absorptive layer INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2014-05-13 US disclosed
US-8697903-B2 Fluorinated ester monomer, making method, fluorinated ester polymer, and difluorohydroxycarboxylic acid SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-04-15 US disclosed
US-20140051024-A1 FLUORINATED ESTER MONOMER, MAKING METHOD, FLUORINATED ESTER POLYMER, AND DIFLUOROHYDROXYCARBOXYLIC ACID SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-02-20 US disclosed
US-20130231491-A1 FLUORINATED MONOMER OF CYCLIC ACETAL STRUCTURE, POLYMER, RESIST PROTECTIVE COATING COMPOSITION, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-09-05 US disclosed
US-8431323-B2 Fluorinated monomer of cyclic acetal structure, polymer, resist protective coating composition, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-30 US disclosed
US-20080248422-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2008-10-09 US disclosed
US-20070218402-A1 Fluorine-containing silicon compounds, silicone resins, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-09-20 US disclosed
EP-1616854-B1 Polymerizable fluorinated ester, manufacturing method, polymer, photoresist composition and patterning process SHINETSU CHEMICAL CO (JP) 2007-09-05 EP disclosed
US-7202318-B2 Polymerizable fluorinated ester, manufacturing method, polymer, photoresist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-04-10 US disclosed
US-20070009832-A1 Fluorinated cyclic structure-bearing silicon compounds and silicone resins, resist compositions using the same, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-11 US disclosed
EP-1741705-A1 Fluorinated cyclic structure-bearing silicon compounds and silicone resins, resist compositions using the same, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2007-01-10 EP disclosed
US-20060093960-A1 Fluorinated monomer having cyclic structure, manufacturing method, polymer, photoresist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2006-05-04 US disclosed
EP-1652844-A2 Fluorinated monomer having cyclic structure, manufacturing method, polymer, photoresist composition and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2006-05-03 EP disclosed
EP-1616854-A1 Polymerizable fluorinated ester, manufacturing method, polymer, photoresist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-01-18 EP disclosed
US-20060009602-A1 Polymerizable fluorinated ester, manufacturing method, polymer, photoresist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2006-01-12 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20060009602-A1 Polymerizable fluorinated ester, manufacturing method, polymer, photoresist composition and patterning process HRH3, SUV39H2, SUV39H1 GRIN2D 2298/4885GRIN3B 2914/4885GRIN1 2456/4885
US-20080248422-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR RER1, ACAD9, RRS1 GRIN2D 371/4885GRIN3B 243/4885GRIN1 16/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.