SCHEMBL8927977

SCHEMBL8927977

CCCC(=O)OCC(F)(F)S(=O)(=O)O

nearest known ligand 0.40

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.40
DGKA P23743 1/20 0.33
LMNA P02545 1/20 0.33
PAM P19021 2/20 0.31
FAAH O00519 1/20 0.31
L3MBTL1 Q9Y468 1/20 0.30
CA12 O43570 1/20 0.30
CA2 P00918 1/20 0.30
CA7 P43166 1/20 0.30
CA9 Q16790 1/20 0.30
CA14 Q9ULX7 1/20 0.30
POLB P06746 1/20 0.30
GAA P10253 1/20 0.30
CES2 O00748 1/20 0.30
CES1 P23141 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2759402 0.89 DGKA (0.43) ALDH1A1DGKALMNAPAMFAAH
SCHEMBL14228085 0.88 ALDH1A1 (0.34) ALDH1A1LMNAL3MBTL1POLBGAA
SCHEMBL3430825 0.88 DGKA (0.50) ALDH1A1DGKALMNAPAMFAAH
SCHEMBL18785733 0.86 DGKA (0.53) ALDH1A1DGKALMNAPAMFAAH
SCHEMBL11917862 0.86 DGKA (0.53) ALDH1A1DGKALMNAPAMFAAH
SCHEMBL18785847 0.86 DGKA (0.53) ALDH1A1DGKALMNAPAMFAAH
SCHEMBL18785848 0.86 DGKA (0.53) ALDH1A1DGKALMNAPAMFAAH
SCHEMBL18785736 0.86 DGKA (0.53) ALDH1A1DGKALMNAPAMFAAH
SCHEMBL18785845 0.86 DGKA (0.53) ALDH1A1DGKALMNAPAMFAAH
SCHEMBL18785732 0.86 DGKA (0.53) ALDH1A1DGKALMNAPAMFAAH

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11839476-B2 Bio-electrode composition, bio-electrode, and method for manufacturing a bio-electrode SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-12 US disclosed
US-RE46765-E1 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-27 US disclosed
US-RE46736-E1 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
US-20170115566-A1 RESIST COMPOSITION, PATTERNING PROCESS, AND BARIUM, CESIUM AND CERIUM SALTS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-27 US disclosed
US-9321875-B2 Additive for resist and resist composition comprising same KOREA KUMHO PETROCHEMICAL CO., LTD. (KR) 2016-04-26 US disclosed
US-9063411-B2 Additive for resist and resist composition comprising same KOREA KUMHO PETROCHEMICAL CO., LTD. (KR) 2015-06-23 US disclosed
US-8980526-B2 Hydrophilic photoacid generator and resist composition comprising same KOREA KUMHO PETROCHEMICAL CO., LTD. (KR) 2015-03-17 US disclosed
US-8951710-B2 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-02-10 US disclosed
US-8951710-B2 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-02-10 US disclosed
US-20140342274-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-11-20 US disclosed
US-20140342274-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-11-20 US disclosed
US-8835096-B2 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-09-16 US disclosed
US-8835096-B2 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-09-16 US disclosed
US-20130177852-A1 HYDROPHILIC PHOTOACID GENERATOR AND RESIST COMPOSITION COMPRISING SAME KOREA KUMHO PETROCHEMICAL CO., LTD. (KR) 2013-07-11 US disclosed
US-20130171560-A1 ADDITIVE FOR RESIST AND RESIST COMPOSITION COMPRISING SAME KOREA KUMHO PETROCHEMICAL CO., LTD. (KR) 2013-07-04 US disclosed
US-20130171561-A1 ADDITIVE FOR RESIST AND RESIST COMPOSITION COMPRISING SAME KOREA KUMHO PETROCHEMICAL CO., LTD. (KR) 2013-07-04 US disclosed
US-20120219887-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-30 US disclosed
US-8187790-B2 Polymer for resist and resist composition manufactured using the same KOREA KUMHO PETROCHEMICAL CO., LTD. (KR) 2012-05-29 US disclosed
US-20110244392-A1 POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2011-10-06 US disclosed
US-20100081079-A1 POLYMER FOR RESIST AND RESIST COMPOSITION MANUFACTURED USING THE SAME KOREA KUMHO PETROCHEMICAL CO., LTD. 2010-04-01 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20170115566-A1 RESIST COMPOSITION, PATTERNING PROCESS, AND BARIUM, CESIUM AND CERIUM SALTS CASR, LIFR, LBR ALDH1A1 4520/4885DGKA 253/4885LMNA 482/4885
US-11839476-B2 Bio-electrode composition, bio-electrode, and method for manufacturing a bio-electrode AFF1, AFF4, AFF2 ALDH1A1 256/4885DGKA 3699/4885LMNA 2676/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.