Predicted protein targets (top 1)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Phosphine SCHEMBL4234955 | 0.96 | TSHR (0.30) | TSHR | |
| SCHEMBL17680 | 0.96 | — | — | |
| SCHEMBL452809 | 0.96 | — | — | |
| Phosphine SCHEMBL28297157 | 0.93 | — | — | |
| SCHEMBL2104199 | 0.92 | — | — | |
| Hydrochloric Acid SCHEMBL4886746 | 0.92 | — | — | |
| SCHEMBL9838790 | 0.92 | — | — | |
| SCHEMBL8967299 | 0.92 | — | — | |
| SCHEMBL21752046 | 0.92 | — | — | |
| SCHEMBL9837404 | 0.92 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 121 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20200219888-A1 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE | XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD. (CN) | 2020-07-09 | — | — | US | claimed |
| US-9343475-B2 | Vertical memory devices and methods of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2016-05-17 | — | — | US | claimed |
| US-20150200203-A1 | Vertical Memory Devices and Methods of Manufacturing the Same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2015-07-16 | — | — | US | claimed |
| US-20240145530-A1 | INTEGRATED CIRCUIT AND NON-VOLATILE MEMORY DEVICE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2024-05-02 | — | — | US | disclosed |
| US-11751377-B2 | Semiconductor device and method fabricating the same | XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD. (CN) | 2023-09-05 | — | — | US | disclosed |
| US-20230260901-A1 | INTEGRATED CIRCUIT | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2023-08-17 | — | — | US | disclosed |
| US-11659706-B2 | Semiconductor device and method for fabricating the same | XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD. (CN) | 2023-05-23 | — | — | US | disclosed |
| CN-111341726-B | Semiconductor device and method for manufacturing the same | 夏泰鑫半导体(青岛)有限公司 | 2023-05-02 | — | — | CN | disclosed |
| CN-115621196-A | Method for improving high-resistance stability of polysilicon gate | 华虹半导体(无锡)有限公司 | 2023-01-17 | — | — | CN | disclosed |
| US-11302774-B2 | Semiconductor device and method fabricating the same | XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD. (CN) | 2022-04-12 | — | — | US | disclosed |
| US-11233056-B2 | Semiconductor device and method fabricating the same | XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD. (CN) | 2022-01-25 | — | — | US | disclosed |
| US-20150200112-A1 | METHODS OF FORMING CONDUCTIVE PATTERNS AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2015-07-16 | — | — | US | disclosed |
| US-20150194333-A1 | Methods of Forming Wiring Structures and Methods of Fabricating Semiconductor Devices | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2015-07-09 | — | — | US | disclosed |
| US-20150155163-A1 | SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2015-06-04 | — | — | US | disclosed |
| CN-101621081-B | Structure of overlapping capacitors in semiconductor manufacture process | WUXI CRYSTAL SOURCE MICRO ELECTRONICS CO LTD | 2010-12-08 | — | — | CN | disclosed |
| CN-101621081-A | Structure of overlapping capacitors in semiconductor manufacture process | WUXI CRYSTAL SOURCE MICRO ELEC | 2010-01-06 | — | — | CN | disclosed |
| CN-1988200-A | Phase change memory with spacer electrode side connection and manufacturing method thereof | IND TECHNOLOGY INST (CN) | 2007-06-27 | — | — | CN | disclosed |
| CN-1227639-C | Matrix base and liquid crystal device using said base and display device using said device | CANON KK (JP) | 2005-11-16 | — | — | CN | disclosed |
| CN-1194422-A | Matrix base and liquid crystal device using said base and display device using said device | CANON KK (JP) | 1998-09-30 | — | — | CN | disclosed |
| US-5552339-A | Furnace amorphous-SI cap layer to prevent tungsten volcano effect | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (TW) | 1996-09-03 | — | — | US | disclosed |