⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4234958 | 0.96 | — | — | |
| SCHEMBL452809 | 0.96 | — | — | |
| SCHEMBL17680 | 0.96 | — | — | |
| SCHEMBL9838790 | 0.92 | — | — | |
| SCHEMBL9837404 | 0.92 | — | — | |
| SCHEMBL3134796 | 0.92 | — | — | |
| Hydrochloric Acid SCHEMBL4886746 | 0.92 | — | — | |
| SCHEMBL9838784 | 0.92 | — | — | |
| SCHEMBL21752046 | 0.92 | — | — | |
| Phosphine SCHEMBL8967295 | 0.92 | TSHR (0.32) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-115621196-A | Method for improving high-resistance stability of polysilicon gate | 华虹半导体(无锡)有限公司 | 2023-01-17 | — | — | CN | disclosed |
| CN-106997924-B | Phase transition storage and its manufacturing method and electronic equipment | 中芯国际集成电路制造(上海)有限公司 | 2019-11-26 | — | — | CN | disclosed |
| CN-110491836-A | A kind of semiconductor devices and its manufacturing method, electronic device | SEMICONDUCTOR MFG INT SHANGHAI CORP | 2019-11-22 | — | — | CN | disclosed |
| CN-106611709-B | A kind of semiconductor devices and preparation method thereof, electronic device | 中芯国际集成电路制造(上海)有限公司 | 2019-09-03 | — | — | CN | disclosed |
| CN-104779148-B | A method of making semiconductor devices | 中芯国际集成电路制造(上海)有限公司 | 2019-07-26 | — | — | CN | disclosed |
| CN-105990145-B | A kind of semiconductor devices and preparation method thereof and electronic device | 中芯国际集成电路制造(上海)有限公司 | 2019-06-28 | — | — | CN | disclosed |
| CN-109713036-A | A kind of IGBT device and its manufacturing method | 中芯国际集成电路制造(上海)有限公司 | 2019-05-03 | — | — | CN | disclosed |
| CN-109390399-A | A kind of LDMOS device and its manufacturing method and electronic device | 无锡华润上华科技有限公司 | 2019-02-26 | — | — | CN | disclosed |
| CN-109285810-A | A kind of semiconductor devices and its manufacturing method and electronic device | 中芯国际集成电路制造(上海)有限公司 | 2019-01-29 | — | — | CN | disclosed |
| CN-108735711-A | A kind of semiconductor devices and preparation method thereof, electronic device | 中芯国际集成电路制造(北京)有限公司 | 2018-11-02 | — | — | CN | disclosed |
| CN-107464813-A | A kind of semiconductor devices and preparation method thereof and electronic installation | 中芯国际集成电路制造(上海)有限公司 | 2017-12-12 | — | — | CN | disclosed |
| CN-104282644-B | A kind of programmable through-silicon via structure and preparation method thereof | 中芯国际集成电路制造(上海)有限公司 | 2017-11-14 | — | — | CN | disclosed |
| CN-104183536-B | A kind of method for making semiconductor devices | 中芯国际集成电路制造(上海)有限公司 | 2017-10-20 | — | — | CN | disclosed |
| CN-106935586-A | Memory structure | 力晶科技股份有限公司 | 2017-07-07 | — | — | CN | disclosed |
| CN-101621081-B | Structure of overlapping capacitors in semiconductor manufacture process | WUXI CRYSTAL SOURCE MICRO ELECTRONICS CO LTD | 2010-12-08 | — | — | CN | disclosed |
| CN-101621081-A | Structure of overlapping capacitors in semiconductor manufacture process | WUXI CRYSTAL SOURCE MICRO ELEC | 2010-01-06 | — | — | CN | disclosed |
| CN-1988200-A | Phase change memory with spacer electrode side connection and manufacturing method thereof | IND TECHNOLOGY INST (CN) | 2007-06-27 | — | — | CN | disclosed |
| CN-1227639-C | Matrix base and liquid crystal device using said base and display device using said device | CANON KK (JP) | 2005-11-16 | — | — | CN | disclosed |
| CN-1194422-A | Matrix base and liquid crystal device using said base and display device using said device | CANON KK (JP) | 1998-09-30 | — | — | CN | disclosed |
| US-5552339-A | Furnace amorphous-SI cap layer to prevent tungsten volcano effect | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (TW) | 1996-09-03 | — | — | US | disclosed |