SCHEMBL452809

SCHEMBL452809

CCO[Si](OCC)(OCC)OCC.CCO[Si](OCC)(OCC)OCC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17680 1.00
SCHEMBL9838784 0.96
SCHEMBL2104199 0.96
SCHEMBL9838790 0.96
Phosphine SCHEMBL8967295 0.96 TSHR (0.32)
SCHEMBL3134796 0.96
Hydrochloric Acid SCHEMBL4886746 0.96
SCHEMBL8967299 0.96
SCHEMBL21752046 0.96
SCHEMBL9837404 0.96

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 160 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-113004546-A Silicon hydroxyl magnetic bead and preparation method and application thereof 安徽为臻生物工程技术有限公司 2021-06-22 CN claimed
WO-2021112583-A1 COMPOSITION FOR SURFACE TREATING OF STEEL SHEET, STEEL SHEET USING SAME, AND MANUFACTURING METHOD OF SAME 주식회사 포스코 2021-06-10 WO claimed
CN-104628422-B A kind of coated with silica magnetic nanoparticle makes the method that cement or concrete have absorbing property and solid surface 济南大学 2016-08-24 CN claimed
CN-1117699-C Preparation of high temperature resisting electrothermal insulating magnesia material UNIV TSINGHUA (CN) 2003-08-13 CN claimed
US-12614698-B2 Plasma processing apparatus and plasma processing method ULVAC, INC. (JP) 2026-04-28 US disclosed
EP-4328545-B1 METHOD FOR MANUFACTURING CURVED SURFACE SUPPORT STRUCTURE, AND HEMISPHERICAL RESONATOR GYROSCOPE TOKYO KEIKI INC (JP) 2025-11-26 EP disclosed
CN-120041810-A Semiconductor film deposition control method and system 上海积塔半导体有限公司 2025-05-27 CN disclosed
EP-4446019-A1 METHOD FOR PRODUCING INORGANIC-ORGANIC HYBRID POLYMER COATINGS AND COATED SUBSTRATE THAT CAN BE PRODUCED BY THE METHOD Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. (DE) 2024-10-16 EP disclosed
US-20240283216-A1 SUBCARRIER WAFER, SUBCARRIER, METHOD FOR MANUFACTURING SUBCARRIER WAFER TDK CORPORATION (JP) 2024-08-22 US disclosed
US-12066580-B2 Photodetection device KYOCERA CORPORATION (JP) 2024-08-20 US disclosed
CN-118522696-A Sub-carrier wafer, sub-carrier, laser module, optical engine module, XR glasses, and method for manufacturing sub-carrier wafer TDK株式会社 2024-08-20 CN disclosed
US-20240199414-A1 METHOD FOR MANUFACTURING CURVED SURFACE SUPPORT STRUCTURE, AND HEMISPHERICAL RESONATOR GYROSCOPE TOKYO KEIKI INC. (JP) 2024-06-20 US disclosed
CN-1499637-A Non-volatile semiconductor storage ������������ʽ���� 2004-05-26 CN disclosed
CN-1143368-C Improved gapfill of semiconductor structure using doped silicate glasses 2004-03-24 CN disclosed
CN-1469440-A Method for producing semiconductor ���µ�����ҵ��ʽ���� 2004-01-21 CN disclosed
CN-1117699-C Preparation of high temperature resisting electrothermal insulating magnesia material UNIV TSINGHUA (CN) 2003-08-13 CN disclosed
CN-1369870-A Light emitting device and electronic apparatus using the same SEMICONDUCTOR ENERGY LAB (JP) 2002-09-18 CN disclosed
CN-1221211-A Improved gapfill of semiconductor structure using doped silicate glasses SIEMENS AG (DE) 1999-06-30 CN disclosed
US-5270396-A Monovinylarene and conjugated diene PHILLIPS PETROLEUM COMPANY (US) 1993-12-14 US disclosed
US-4072636-A ORGANO-SILICATE MITSUBISHI CHEMICAL INDUSTRIES LIMITED (JA) 1978-02-07 US disclosed