SCHEMBL9065225

SCHEMBL9065225

CC(C)(C1CCC(c2ccc(O)c(O)c2)CC1)C1CCC(c2ccc(O)c(O)c2)CC1

nearest known ligand 0.57

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
QDPR P09417 5/20 0.57
ACMSD Q8TDX5 2/20 0.40
MEN1 O00255 1/20 0.40
POLB P06746 1/20 0.40
GAA P10253 1/20 0.40
KMT2A Q03164 1/20 0.40
PTPN1 P18031 1/20 0.40
ALOX5 P09917 1/20 0.40
ESR2 Q92731 5/20 0.39
ALDH1A1 P00352 1/20 0.38
HPGD P15428 1/20 0.38
ALOX15 P16050 1/20 0.38
HSD17B10 Q99714 1/20 0.38
TDP1 Q9NUW8 1/20 0.38
WDR5 P61964 1/20 0.38
ESR1 P03372 1/20 0.37
CYP3A4 P08684 1/20 0.37
CYP2C9 P11712 1/20 0.37
SLC22A12 Q96S37 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13609949 0.86 ESR1 (0.43) QDPRACMSDESR2TDP1WDR5
SCHEMBL10282755 0.84 QDPR (0.73) QDPRACMSDMEN1POLBGAA
SCHEMBL108606 0.84 QDPR (0.73) QDPRACMSDMEN1POLBGAA
SCHEMBL4147450 0.79 ESR2 (0.62) ESR2ESR1CYP3A4CYP2C9
SCHEMBL28070219 0.79 CYP2C9 (0.55) QDPRACMSDMEN1POLBGAA
Cyanide SCHEMBL27763654 0.79 QDPR (0.66) QDPRACMSDMEN1POLBGAA
SCHEMBL1291751 0.77 QDPR (0.68) QDPRACMSDMEN1POLBGAA
SCHEMBL28188871 0.77 QDPR (0.68) QDPRACMSDMEN1POLBGAA
SCHEMBL68815 0.75 QDPR (0.66) QDPRACMSDMEN1POLBGAA
SCHEMBL15372532 0.75 ESR2 (0.51) QDPRACMSDESR2WDR5ESR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7615331-B2 Photosensitive resin composition, production method of cured relief pattern using the same and semiconductor device FUJIFILM CORPORATION (JP) 2009-11-10 US disclosed
US-7615331-B2 Photosensitive resin composition, production method of cured relief pattern using the same and semiconductor device FUJIFILM CORPORATION (JP) 2009-11-10 US disclosed
US-20080081294-A1 PHOTOSENSITIVE RESIN COMPOSITION, PRODUCTION METHOD OF CURED RELIEF PATTERN USING THE SAME AND SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed
US-20080081294-A1 PHOTOSENSITIVE RESIN COMPOSITION, PRODUCTION METHOD OF CURED RELIEF PATTERN USING THE SAME AND SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed
EP-1906246-A2 Photosensitive resin composition, production method of cured relief pattern using the same and semiconductor device FUJIFILM Corporation (JP) 2008-04-02 EP disclosed
EP-0430134-B1 High impact graft copolymers and resin compositions MITSUBISHI RAYON CO (JP) 1996-07-31 EP disclosed
EP-0430134-A2 High impact graft copolymers and resin compositions MITSUBISHI RAYON CO., LTD. (JP) 1991-06-05 EP disclosed