SCHEMBL90746

SCHEMBL90746

CCOCC1(C)CCCC1

nearest known ligand 0.43

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
PARP1 P09874 1/20 0.32
HPGD P15428 1/20 0.32
DPP4 P27487 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10447629 0.97 HPGD (0.34) PARP1HPGDDPP4
SCHEMBL10447437 0.97 HPGD (0.34) PARP1HPGDDPP4
SCHEMBL10305806 0.97 HPGD (0.34) PARP1HPGDDPP4
SCHEMBL14586042 0.95
SCHEMBL16079858 0.89
SCHEMBL9750724 0.86 HPGD (0.34) PARP1HPGD
SCHEMBL7564099 0.83 HPGD (0.37) PARP1HPGD
SCHEMBL6938889 0.83 HPGD (0.37) PARP1HPGD
SCHEMBL21095477 0.78 AOC2 (0.33)
SCHEMBL1683179 0.78 SLC6A2 (0.34)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 139 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10457761-B2 Polymer, resist composition, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-10-29 US disclosed
US-10191373-B2 Method for producing polymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-01-29 US disclosed
US-9927708-B2 Pattern forming process and shrink agent SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-27 US disclosed
US-9927708-B2 Pattern forming process and shrink agent SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-27 US disclosed
US-9910358-B2 Patterning process and chemically amplified negative resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-06 US disclosed
US-9910358-B2 Patterning process and chemically amplified negative resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-06 US disclosed
US-9904172-B2 Shrink material and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
US-9904172-B2 Shrink material and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
US-9740100-B2 Hemiacetal compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-22 US disclosed
US-9740100-B2 Hemiacetal compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-22 US disclosed
US-20130017484-A1 POLYMERIZABLE ESTER COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-17 US disclosed
US-20130017484-A1 POLYMERIZABLE ESTER COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-17 US disclosed
US-20130017492-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-17 US disclosed
US-20120308930-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-12-06 US disclosed
US-20120308930-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-12-06 US disclosed
US-20120202158-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-09 US disclosed
US-20120202158-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-09 US disclosed
US-20120183903-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-07-19 US disclosed
US-20120183903-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-07-19 US disclosed
US-8129411-B2 Organic compounds NOVARTIS AG (CH) 2012-03-06 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20130017484-A1 POLYMERIZABLE ESTER COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS RER1, DOT1L, H1-0 PARP1 148/4885HPGD 2234/4885DPP4 4813/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.