SCHEMBL91312

SCHEMBL91312

C=C(C)C(=O)OC1CCC(OC(C)=O)CC1

nearest known ligand 0.41

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.41
THRB P10828 1/20 0.35
CHRM2 P08172 6/20 0.34
CHRM1 P11229 4/20 0.34
CHRM4 P08173 3/20 0.34
CHRM3 P20309 3/20 0.34
CHRM5 P08912 2/20 0.34
TSHR P16473 3/20 0.33
KMT2A Q03164 2/20 0.33
MEN1 O00255 1/20 0.33
CYP2D6 P10635 1/20 0.33
NPY5R Q15761 1/20 0.33
HSD17B10 Q99714 1/20 0.32
TDP1 Q9NUW8 1/20 0.32
ALOX15 P16050 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL372980 0.93 ALDH1A1 (0.46) ALDH1A1THRBTSHRKMT2AHSD17B10
SCHEMBL342182 0.93 ALDH1A1 (0.46) ALDH1A1THRBTSHRKMT2AHSD17B10
SCHEMBL25278 0.93
SCHEMBL9972479 0.87 ALDH1A1 (0.41) ALDH1A1THRBTSHR
SCHEMBL91315 0.87 ALDH1A1 (0.34) ALDH1A1THRBCHRM2CHRM1CHRM4
SCHEMBL91316 0.85 CHRM2 (0.36) ALDH1A1THRBCHRM2CHRM1CHRM4
SCHEMBL91313 0.85 ALDH1A1 (0.40) ALDH1A1THRBTSHR
SCHEMBL2769160 0.85 ALDH1A1 (0.40) ALDH1A1THRBTSHR
SCHEMBL6674567 0.85 ALDH1A1 (0.39) ALDH1A1THRBTSHR
SCHEMBL149225 0.85 ALDH1A1 (0.39) ALDH1A1THRBTSHRKMT2AMEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8288072-B2 Antireflection film; fast etching speed whcih reduces deformation; accuracy; 2,3-epoxypropyl methacrylate ester-styrene copolymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-10-16 US disclosed
US-8198016-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-06-12 US disclosed
US-8192921-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-06-05 US disclosed
US-20120108043-A1 PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-03 US disclosed
US-8129100-B2 Double patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-03-06 US disclosed
US-8129086-B2 Polymerizable compound, polymer, positive resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-03-06 US disclosed
US-8101341-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-24 US disclosed
US-20120009527-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-12 US disclosed
US-20110294070-A1 MONOMER, POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-12-01 US disclosed
US-8003295-B2 Patterning process and resist composition used therein SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-08-23 US disclosed
US-20090253084-A1 DOUBLE PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-08 US disclosed
US-20090087786-A1 PATTERNING PROCESS AND RESIST COMPOSITION USED THEREIN SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-04-02 US disclosed
US-20090053651-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-26 US disclosed
US-7491483-B2 Polymers, positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-17 US disclosed
US-7449277-B2 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL C., LTD (JP) 2008-11-11 US disclosed
US-20080227037-A1 Resist lower layer film composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-09-18 US disclosed
US-20080220381-A1 Antireflection film composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-09-11 US disclosed
US-20080199806-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-08-21 US disclosed
US-7368218-B2 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-05-06 US disclosed
US-7332616-B2 Polymerizable compound, polymer, positive-resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-02-19 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110294070-A1 MONOMER, POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS PARG, PCNA, POLH ALDH1A1 2467/4885THRB 4443/4885CHRM2 4292/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.