SCHEMBL9154264

SCHEMBL9154264

N#Cc1c(N)c(C#N)c(F)c(C#N)c1F

nearest known ligand 0.39

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
TRPV4 Q9HBA0 1/20 0.39
MAPK1 P28482 1/20 0.33
RECQL P46063 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25778066 0.91 TRPV4 (0.35) TRPV4MAPK1RECQL
SCHEMBL8895828 0.89 TRPV4 (0.36) TRPV4
SCHEMBL9688285 0.88 TRPV4 (0.39) TRPV4
SCHEMBL25778158 0.88 TRPV4 (0.33) TRPV4MAPK1RECQL
SCHEMBL9849624 0.86 TRPV4 (0.37) TRPV4
SCHEMBL9625848 0.84 TRPV4 (0.41) TRPV4MAPK1
SCHEMBL8895191 0.83 ALDH1A1 (0.39) TRPV4MAPK1
SCHEMBL9152960 0.83 TRPV4 (0.32) TRPV4
SCHEMBL5154882 0.82 TRPV4 (0.33) TRPV4
SCHEMBL9687110 0.81 ALDH1A1 (0.42) TRPV4MAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2024126619-A1 ORGANIC ELECTROLUMINESCENT DEVICE COMPRISING A COMPOUND OF FORMULA (I) AND A COMPOUND OF FORMULA (II), AND DISPLAY DEVICE COMPRISING THE ORGANIC ELECTROLUMINESCENT DEVICE NOVALED GMBH (DE) 2024-06-20 WO disclosed
WO-2024061807-A1 ORGANIC ELECTRONIC DEVICE COMPRISING A CHARGE GENERATION LAYER NOVALED GMBH (DE) 2024-03-28 WO disclosed
WO-2024033322-A1 METAL COMPLEX, SEMICONDUCTOR LAYER COMPRISING A METAL COMPLEX AND ORGANIC ELECTRONIC DEVICE NOVALED GMBH (DE) 2024-02-15 WO disclosed
WO-2023110888-A1 A CE(IV) METAL COMPLEX, AN ORGANIC ELECTRONIC DEVICE COMPRISING AN ANODE LAYER, A CATHODE LAYER AND A CHARGE GENERATION LAYER, WHEREIN THE CHARGE GENERATION LAYER COMPRISES A P-TYPE CHARGE GENERATION LAYER THAT COMPRISES THE CE(IV) METAL COMPLEX AND A N-TYPE CHARGE GENERATION LAYER NOVALED GMBH (DE) 2023-06-22 WO disclosed
EP-0497213-B1 Process for producing 3,5-difluoroaniline ISHIHARA SANGYO KAISHA (JP) 1995-09-27 EP disclosed
US-5399767-A Process for producing 3,5-difluoraniline ISHIHARA SANGYO KAISHA LTD. (JP) 1995-03-21 US disclosed
EP-0497213-A2 Process for producing 3,5-difluoroaniline ISHIHARA SANGYO KAISHA, LTD. (JP) 1992-08-05 EP disclosed