⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL21485362 | 0.65 | — | — | |
| SCHEMBL7748359 | 0.62 | — | — | |
| Bicarbonate SCHEMBL9628164 | 0.61 | ALDH1A1 (0.38) | — | |
| SCHEMBL609996 | 0.60 | — | — | |
| SCHEMBL7327327 | 0.57 | — | — | |
| SCHEMBL202800 | 0.57 | — | — | |
| SCHEMBL2167409 | 0.57 | — | — | |
| SCHEMBL6874429 | 0.55 | FFAR3 (0.41) | — | |
| Propane SCHEMBL7873677 | 0.53 | — | — | |
| SCHEMBL662803 | 0.52 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8481246-B2 | Method of forming pattern | KABUSHIKI KAISHA TOSHIBA (JP) | 2013-07-09 | — | — | US | disclosed |
| US-20120244474-A1 | METHOD OF FORMING PATTERN | TOSHIBA MEMORY CORPORATION (JP) | 2012-09-27 | — | — | US | disclosed |
| US-7871755-B2 | Photosensitive composition | KABUSHIKI KAISHA TOSHIBA (JP) | 2011-01-18 | — | — | US | disclosed |
| US-20090081582-A1 | irradiating a predetermined region of photosensitive layer, subjecting the photosensitive layer after baking to development treatment with an alkali aqueous solution to selectively remove the light-exposed part; has a photo-acid generator which generates an acid by the action of actinic radiation | KABUSHIKI KAISHA TOSHIBA | 2009-03-26 | — | — | US | disclosed |
| US-7163781-B2 | Process for producing a semiconductor device | KABUSHIKI KAISHA TOSHIBA (JP) | 2007-01-16 | — | — | US | disclosed |
| US-7119156-B2 | Resist resin | KABUSHIKI KAISHA TOSHIBA (JP) | 2006-10-10 | — | — | US | disclosed |
| US-7070905-B2 | Pattern forming process | KABUSHIKI KAISHA TOSHIBA (JP) | 2006-07-04 | — | — | US | disclosed |
| US-7063932-B2 | Resist resin | KABUSHIKI KAISHA TOSHIBA (JP) | 2006-06-20 | — | — | US | disclosed |
| US-7029823-B2 | Resist composition | KABUSHIKI KAISHA TOSHIBA (JP) | 2006-04-18 | — | — | US | disclosed |
| US-6974658-B2 | HIGH MOLECULAR COMPOUND, MONOMER COMPOUNDS AND PHOTOSENSITIVE COMPOSITION FOR PHOTORESIST, PATTERN FORMING METHOD UTILIZING PHOTOSENSITIVE COMPOSITION, AND METHOD OF MANUFACTURING ELECTRONIC COMPONENTS | KABUSHIKI KAISHA TOSHIBA (JP) | 2005-12-13 | — | — | US | disclosed |
| US-6541597-B2 | Resist resin having in its structure a bridged bond containing aliphatic ring; pattern excellent in transparency against short wavelength light and dry-etching resistance can be formed by alkali development with high resolution. | KABUSHIKI KAISHA TOSHIBA (JP) | 2003-04-01 | — | — | US | disclosed |
| US-20020098441-A1 | Resin useful for resist, resist composition and pattern forming process using the same | KABUSHIKI KAISHA TOSHIBA (JP) | 2002-07-25 | — | — | US | disclosed |
| US-6410748-B1 | Alicycli c group-containing monomer | KABUSHIKI KAISHA TOSHIBA (JP) | 2002-06-25 | — | — | US | disclosed |
| US-6303266-B1 | FOR PATTERN HAVING TRANSPARENCY AGAINST SHORT-WAVELENGTH LIGHT AND DRY-ETCHING RESISTANCE CAN BE FORMED BY ALKALI DEVELOPMENT WITH HIGH RESOLUTION | KABUSHIKI KAISHA TOSHIBA (JP) | 2001-10-16 | — | — | US | disclosed |
| US-6291129-B1 | LIGHT SENSITIVE ELEMENT WITH UNSATURATED POLYMERS | KABUSHIKI KAISHA TOSHIBA (JP) | 2001-09-18 | — | — | US | disclosed |
| US-6280897-B1 | GENERATION OF ACID WITH ACTINIC RADIATION | KABUSHIKI KAISHA TOSHIBA (JP) | 2001-08-28 | — | — | US | disclosed |
| US-6071670-A | PHOTORESIST RESIN COMPRISING PHOTOACID GENERATING COMPOUND AND AN ACID HYDROLYZABLE OLIGOMER HAVING ALICYCLIC OR POLYCONDENSED AROMATIC BACKBONE; ALKALI DEVELOPMENT WITH HIGH RESOLUTION, DRY ETCH RESISTANCE | KABUSHIKI KAISHA TOSHIBA (JP) | 2000-06-06 | — | — | US | disclosed |
| US-6060207-A | LOW IN ABSORPTION OF A LIGHT SOURCE OF SHORT WAVELENGTH AND EXCELLENT IN DRY ETCH RESISTANCE; COMPRISES A COMPOUND HAVING A TERPENOID SKELETON | KABUSHIKI KAISHA TOSHIBA (JP) | 2000-05-09 | — | — | US | disclosed |
| US-5932391-A | CONTAINING AN ACYCLIC COMPOUND WHICH IS A VINYL POLYMERBEING LIGHT ABSORBENT | KABUSHIKI KAISHA TOSHIBA (JP) | 1999-08-03 | — | — | US | disclosed |
| US-5863699-A | FORMS A PATTERN THROUGH LIGHT-EXPOSURE WITH EITHER ARGON FLUORIDE OR FLUORINE EXCIMER LASERS, COMPRISES A COMPOUND HAVING EITHER AN ACID-DECOMPOSABLE OR ACID-CROSSLINKABLE GROUP | KABUSHIKI KAISHA TOSHIBA (JP) | 1999-01-26 | — | — | US | disclosed |