SCHEMBL9244178

SCHEMBL9244178

CCC(C)(C)C(=O)OCNS(C)(=O)=O

nearest known ligand 0.33

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
CYP4F2 P78329 1/20 0.33
CYP4A11 Q02928 1/20 0.33
CA12 O43570 1/20 0.30
CA2 P00918 1/20 0.30
CA14 Q9ULX7 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19009119 0.85 CYP4F2 (0.33) CYP4F2CYP4A11CA12CA2CA14
SCHEMBL9923583 0.82 ALDH1A1 (0.35) CYP4F2CYP4A11
SCHEMBL12616971 0.81 EPHX1 (0.39) CYP4F2CYP4A11CA2
SCHEMBL11964780 0.80 ALDH1A1 (0.33) CYP4F2CYP4A11CA12CA2CA14
SCHEMBL29324076 0.80
SCHEMBL9244837 0.78
SCHEMBL19821935 0.77 PKM (0.35) CYP4F2CYP4A11
SCHEMBL19822038 0.76 CYP4F2 (0.36) CYP4F2CYP4A11
SCHEMBL2625703 0.75 CYP4F2 (0.31) CYP4F2CYP4A11
SCHEMBL14887125 0.75 CA1 (0.47) CA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9778568-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-10-03 US disclosed
US-20160327864-A1 POSTITIVE RESIST COMPOSTION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-11-10 US disclosed
US-20150268555-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-09-24 US disclosed
US-8871427-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-10-28 US disclosed
US-8748076-B2 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-10 US disclosed
US-8703384-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-04-22 US disclosed
US-20130101936-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-25 US disclosed
US-20130045444-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-02-21 US disclosed
US-20120196228-A1 RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-02 US disclosed
US-20120164577-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-06-28 US disclosed
US-20120135357-A1 POLYMER, POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-31 US disclosed
US-20120135350-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-31 US disclosed