⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL58986 | 0.89 | — | — | |
| SCHEMBL1116074 | 0.89 | — | — | |
| SCHEMBL491034 | 0.80 | — | — | |
| SCHEMBL21627255 | 0.80 | — | — | |
| SCHEMBL3128131 | 0.80 | — | — | |
| SCHEMBL18395329 | 0.80 | — | — | |
| SCHEMBL578897 | 0.80 | — | — | |
| SCHEMBL7756016 | 0.80 | — | — | |
| SCHEMBL5088058 | 0.80 | — | — | |
| SCHEMBL10519580 | 0.80 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-5753945-A | Integrated circuit structure comprising a zirconium titanium oxide barrier layer and method of forming a zirconium titanium oxide barrier layer | NORTHERN TELECOM LIMITED (CA) | 1998-05-19 | — | — | US | claimed |
| US-20260026016-A1 | METHOD OF MAKING AN ELECTRODE WITHOUT A LITHOGRAPHY MASK | TOKYO ELECTRON LTD (JP) | 2026-01-22 | — | — | US | disclosed |
| CN-109970446-A | A kind of strontium bismuth titanium-based energy-accumulating medium material and preparation method for intermediate sintering temperature | 北京元六鸿远电子科技股份有限公司 | 2019-07-05 | — | — | CN | disclosed |
| US-7947610-B2 | Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof | KABUSHIKI KAISHA TOSHIBA (JP) | 2011-05-24 | — | — | US | disclosed |
| US-20110020547-A1 | HIGH DIELECTRIC CONSTANT FILMS DEPOSITED AT HIGH TEMPERATURE BY ATOMIC LAYER DEPOSITION | L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) | 2011-01-27 | — | — | US | disclosed |
| WO-2011010186-A1 | HIGH DIELECTRIC CONSTANT FILMS DEPOSITED AT HIGH TEMPERATURE BY ATOMIC LAYER DEPOSITION | L'AIR LIQUIDE SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) | 2011-01-27 | — | — | WO | disclosed |
| US-20090233451-A1 | SEMICONDUCTOR DEVICE HAVING A GATE INSULATING FILM STRUCTURE INCLUDING AN INSULATING FILM CONTAINING METAL, SILICON AND OXYGEN AND MANUFACTURING METHOD THEREOF | MICROSOFT TECHNOLOGY LICENSING, LLC | 2009-09-17 | — | — | US | disclosed |
| US-7544593-B2 | Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof | KABUSHIKI KAISHA TOSHIBA (JP) | 2009-06-09 | — | — | US | disclosed |
| CN-100446178-C | Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers | MICRON TECHOLOGY INC (US) | 2008-12-24 | — | — | CN | disclosed |
| US-20080102616-A1 | Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof | MICROSOFT TECHNOLOGY LICENSING, LLC | 2008-05-01 | — | — | US | disclosed |
| US-7306994-B2 | Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof | KABUSHIKI KAISHA TOSHIBA (JP) | 2007-12-11 | — | — | US | disclosed |
| CN-1873917-A | Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers | MICRON TECHOLOGY INC (US) | 2006-12-06 | — | — | CN | disclosed |
| CN-1270352-C | Methods of forming and integrated circuit structures including ruthenium and tungsten-containing layers | MICRON TECHNOLOGY INC (US) | 2006-08-16 | — | — | CN | disclosed |
| US-20050196917-A1 | Method for forming a (111) oriented BSTO thin film layer for high dielectric constant capacitors | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2005-09-08 | — | — | US | disclosed |
| US-20050006675-A1 | Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof | KABUSHIKI KAISHA TOSHIBA | 2005-01-13 | — | — | US | disclosed |
| US-6784508-B2 | Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof | KABUSHIKI KAISHA TOSHIBA (JP) | 2004-08-31 | — | — | US | disclosed |
| CN-1436364-A | Methods of forming and integrated circuit structures including ruthenium and tungsten-containing layers | MICRON TECHNOLOGY INC (US) | 2003-08-13 | — | — | CN | disclosed |
| US-6458713-B1 | Method for manufacturing semiconductor device | KABUSHIKI KAISHA TOSHIBA (JP) | 2002-10-01 | — | — | US | disclosed |
| US-20010023120-A1 | Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof | MICROSOFT TECHNOLOGY LICENSING, LLC | 2001-09-20 | — | — | US | disclosed |