SCHEMBL9504780

SCHEMBL9504780

NC(=NOC(=O)c1ccccc1)c1ccccc1

nearest known ligand 0.80

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
NPC1 O15118 13/20 0.80
RAB9A P51151 13/20 0.80
SMN1; SMN2 Q16637 7/20 0.80
PKM P14618 7/20 0.80
MAPT P10636 2/20 0.80
CDK5 Q00535 2/20 0.75
CDK5R1 Q15078 2/20 0.75
TNF P01375 1/20 0.73
KLF5 Q13887 1/20 0.73
NOD1 Q9Y239 1/20 0.73
HPGD P15428 4/20 0.70
GAA P10253 2/20 0.70
NFKB1 P19838 2/20 0.70
NFKB2 Q00653 2/20 0.70
RELA Q04206 2/20 0.70
L3MBTL1 Q9Y468 2/20 0.67
MITF O75030 1/20 0.65
KMT2A Q03164 1/20 0.65

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13431307 1.00 NPC1 (0.80) NPC1RAB9ASMN1; SMN2PKMMAPT
SCHEMBL13089352 0.89 NPC1 (1.00) NPC1RAB9ASMN1; SMN2PKMMAPT
SCHEMBL13089346 0.89 NPC1 (1.00) NPC1RAB9ASMN1; SMN2PKMMAPT
SCHEMBL15307624 0.87 NPC1 (0.68) NPC1RAB9ASMN1; SMN2PKMMAPT
SCHEMBL13427341 0.86 PKM (0.63) NPC1RAB9ASMN1; SMN2PKMMAPT
SCHEMBL27532422 0.85 NPC1 (0.61) NPC1RAB9ASMN1; SMN2PKMMAPT
SCHEMBL17226764 0.85 NPC1 (0.61) NPC1RAB9ASMN1; SMN2PKMMAPT
SCHEMBL13427318 0.83 NPC1 (0.79) NPC1RAB9ASMN1; SMN2PKMMAPT
SCHEMBL12218578 0.83 NPC1 (0.79) NPC1RAB9ASMN1; SMN2PKMMAPT
SCHEMBL13427333 0.82 NPC1 (0.63) NPC1RAB9ASMN1; SMN2PKMMAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-0332158-B1 RADIATION-SENSITIVE PHOTORESIST COMPOSITION FOR EXPOSURE TO DEEP ULTRAVIOLET RADIATION HOECHST CELANESE CORPORATION (US) 1993-05-26 EP claimed
US-5104770-A POSITIVE-WORKING PHOTORESIST COMPOSITIONS HOECHST CELANESE CORPORATION (US) 1992-04-14 US claimed
EP-0332158-A2 Radiation-sensitive photoresist composition for exposure to deep ultraviolet radiation HOECHST CELANESE CORPORATION (US) 1989-09-13 EP claimed
EP-0332158-B1 RADIATION-SENSITIVE PHOTORESIST COMPOSITION FOR EXPOSURE TO DEEP ULTRAVIOLET RADIATION HOECHST CELANESE CORPORATION (US) 1993-05-26 EP disclosed
US-5104770-A POSITIVE-WORKING PHOTORESIST COMPOSITIONS HOECHST CELANESE CORPORATION (US) 1992-04-14 US disclosed
EP-0332158-A2 Radiation-sensitive photoresist composition for exposure to deep ultraviolet radiation HOECHST CELANESE CORPORATION (US) 1989-09-13 EP disclosed