SCHEMBL958155

SCHEMBL958155

CC(Br)C(=O)OC12CC3CC(CC(C3)C1)C2

nearest known ligand 0.48

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
CYP19A1 P11511 6/20 0.48
CYP17A1 P05093 5/20 0.48
NAAA Q02083 1/20 0.39
NPSR1 Q6W5P4 1/20 0.38
ALDH1A1 P00352 4/20 0.37
EPHX1 P07099 1/20 0.37
NPC1 O15118 1/20 0.37
MAPT P10636 1/20 0.34
EPHX2 P34913 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14673993 0.88 CYP17A1 (0.50) CYP19A1CYP17A1NAAANPSR1ALDH1A1
SCHEMBL9608681 0.84 CYP19A1 (0.50) CYP19A1CYP17A1NAAANPSR1ALDH1A1
SCHEMBL27437399 0.84 CYP19A1 (0.50) CYP19A1CYP17A1NAAANPSR1ALDH1A1
SCHEMBL11991223 0.81 CYP19A1 (0.48) CYP19A1CYP17A1NAAANPSR1ALDH1A1
SCHEMBL10613175 0.81 CYP19A1 (0.48) CYP19A1CYP17A1NAAANPSR1ALDH1A1
SCHEMBL3217474 0.81 CYP17A1 (0.48) CYP19A1CYP17A1NAAANPSR1ALDH1A1
SCHEMBL20078523 0.81 CYP19A1 (0.48) CYP19A1CYP17A1NAAANPSR1ALDH1A1
SCHEMBL4742227 0.81 CYP19A1 (0.48) CYP19A1CYP17A1NAAANPSR1ALDH1A1
SCHEMBL6441379 0.81 CYP19A1 (0.48) CYP19A1CYP17A1NAAANPSR1ALDH1A1
SCHEMBL28529274 0.80 CYP19A1 (0.42) CYP19A1CYP17A1NAAANPSR1ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-116615405-A Compound, polymer, composition for film formation, method for forming pattern, method for forming insulating film, and method for producing compound 三菱瓦斯化学株式会社 2023-08-18 CN disclosed
CN-108137478-B Compound, composition thereof, purification method, resist pattern formation method, and amorphous film production method 三菱瓦斯化学株式会社 2021-09-28 CN disclosed
CN-107924123-B Material for lithography, method for producing same, composition for lithography, method for forming pattern, compound, resin, and method for purifying same 学校法人关西大学 2021-08-06 CN disclosed
CN-107533291-B Compound, resist composition, and resist pattern formation method using same 三菱瓦斯化学株式会社 2021-06-11 CN disclosed
CN-112424283-A Composition for forming optical member, compound and resin 三菱瓦斯化学株式会社 2021-02-26 CN disclosed
CN-108008600-B Radiation-sensitive composition 三菱瓦斯化学株式会社 2021-02-09 CN disclosed
WO-2020226150-A1 COMPOUND AND PRODUCTION METHOD THEREOF, RESIN, COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, UNDERLAYER FILM FOR LITHOGRAPHY, OPTICAL COMPONENT, AND METHOD FOR PURIFYING COMPOUND OR RESIN 学校法人 関西大学 2020-11-12 WO disclosed
CN-111615507-A Compound, resin, composition, and pattern forming method 三菱瓦斯化学株式会社 2020-09-01 CN disclosed
CN-106462059-B Resist material, resist composition, and resist pattern forming method 三菱瓦斯化学株式会社 2020-07-28 CN disclosed
CN-104995559-B Resist composition, resist pattern forming method, and polyphenol derivative used therefor 三菱瓦斯化学株式会社 2020-04-07 CN disclosed
WO-2020027206-A1 OPTICAL COMPONENT-FORMING COMPOSITION, OPTICAL COMPONENT, COMPOUND, AND RESIN 三菱瓦斯化学株式会社 2020-02-06 WO disclosed
US-9244349-B2 Positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-01-26 US disclosed
US-20110008728-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2011-01-13 US disclosed
US-20100310985-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2010-12-09 US disclosed