Predicted protein targets (top 9)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ELANE | P08246 | 1/20 | 0.35 |
| ▸ | PDK2 | Q15119 | 16/20 | 0.33 |
| ▸ | MEN1 | O00255 | 1/20 | 0.31 |
| ▸ | USP2 | O75604 | 1/20 | 0.31 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.31 |
| ▸ | LMNA | P02545 | 1/20 | 0.31 |
| ▸ | MAPT | P10636 | 1/20 | 0.31 |
| ▸ | HTT | P42858 | 1/20 | 0.31 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2775873 | 0.89 | ELANE (0.39) | ELANEPDK2MEN1USP2ALDH1A1 | |
| SCHEMBL9610324 | 0.88 | ELANE (0.34) | ELANEPDK2 | |
| SCHEMBL20306530 | 0.86 | PDK2 (0.32) | PDK2 | |
| SCHEMBL9610457 | 0.85 | HSD17B10 (0.33) | ELANEPDK2MEN1ALDH1A1MAPT | |
| SCHEMBL9610537 | 0.83 | ELANE (0.36) | ELANEMEN1USP2ALDH1A1LMNA | |
| SCHEMBL19335372 | 0.81 | PPARG (0.32) | PDK2 | |
| SCHEMBL9610306 | 0.81 | ELANE (0.38) | ELANEPDK2MEN1USP2ALDH1A1 | |
| SCHEMBL9610314 | 0.80 | GSK3B (0.34) | ELANEMEN1ALDH1A1MAPTKMT2A | |
| SCHEMBL9610315 | 0.80 | MAPT (0.36) | ELANEMEN1ALDH1A1MAPTKMT2A | |
| SCHEMBL18826211 | 0.79 | PDK2 (0.34) | PDK2MAPT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 111 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10007178-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-26 | — | — | US | disclosed |
| US-10007178-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-26 | — | — | US | disclosed |
| US-9869931-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-01-16 | — | — | US | disclosed |
| US-9869931-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-01-16 | — | — | US | disclosed |
| US-9846360-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-12-19 | — | — | US | disclosed |
| US-9846360-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-12-19 | — | — | US | disclosed |
| US-9760010-B2 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-09-12 | — | — | US | disclosed |
| US-9760010-B2 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-09-12 | — | — | US | disclosed |
| US-9645498-B2 | Developer and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-09 | — | — | US | disclosed |
| US-9645498-B2 | Developer and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-09 | — | — | US | disclosed |
| US-8450042-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-05-28 | — | — | US | disclosed |
| US-20130089820-A1 | RESIST TOP COAT COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-04-11 | — | — | US | disclosed |
| US-20130089820-A1 | RESIST TOP COAT COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-04-11 | — | — | US | disclosed |
| US-20130029270-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-01-31 | — | — | US | disclosed |
| US-20130029270-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-01-31 | — | — | US | disclosed |
| US-20120202153-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-08-09 | — | — | US | disclosed |
| US-20120135349-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-05-31 | — | — | US | disclosed |
| US-20120135349-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-05-31 | — | — | US | disclosed |
| US-20100227274-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-09-09 | — | — | US | disclosed |
| US-20100227274-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-09-09 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20130089820-A1 | RESIST TOP COAT COMPOSITION AND PATTERNING PROCESS | PSMB2, PSMC6, PSMB1 | ELANE 2813/4885PDK2 4255/4885MEN1 2809/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.