SCHEMBL961479

SCHEMBL961479

O=C(CCl)OC1C2CC3C(=O)OC1C3O2

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14665423 0.91
SCHEMBL12914661 0.91
SCHEMBL11989124 0.88
SCHEMBL3738207 0.88 NLRP3 (0.39)
SCHEMBL12405318 0.87 CHRM2 (0.31)
SCHEMBL799806 0.87
SCHEMBL11989122 0.87 PRKCA (0.30)
SCHEMBL15147138 0.85 NLRP3 (0.38)
SCHEMBL12914683 0.84
SCHEMBL14669253 0.84

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8367299-B2 Resist composition, method of forming resist pattern, compound and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2013-02-05 US disclosed
US-8367299-B2 Resist composition, method of forming resist pattern, compound and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2013-02-05 US disclosed
US-8216766-B2 Polymer, polymer preparation method, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-07-10 US disclosed
US-8216766-B2 Polymer, polymer preparation method, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-07-10 US disclosed
US-8206890-B2 Resist composition, method of forming resist pattern, compound and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2012-06-26 US disclosed
US-8206890-B2 Resist composition, method of forming resist pattern, compound and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2012-06-26 US disclosed
US-20120009521-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2012-01-12 US disclosed
US-20120009521-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2012-01-12 US disclosed
US-7871752-B2 Lactone-containing compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-01-18 US disclosed
US-20100015552-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2010-01-21 US disclosed
US-20100015552-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2010-01-21 US disclosed
US-20090246686-A1 POLYMER, POLYMER PREPARATION METHOD, RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-01 US disclosed
US-20090246686-A1 POLYMER, POLYMER PREPARATION METHOD, RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-01 US disclosed
US-20080026331-A1 Lactone-containing compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-01-31 US disclosed