SCHEMBL963742

SCHEMBL963742

CCCCS(=O)(=O)ON=C(c1ccc(OCCCOc2ccc(C(=O)C(F)(F)F)cc2)cc1)C(F)(F)F

nearest known ligand 0.42

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
PLA2G4B P0C869 3/20 0.42
TP53 P04637 1/20 0.40
TSHR P16473 1/20 0.40
MLYCD O95822 3/20 0.39
RARB P10826 4/20 0.38
GAA P10253 1/20 0.38
RAB9A P51151 1/20 0.38
L3MBTL1 Q9Y468 1/20 0.38
MEN1 O00255 1/20 0.38
ALDH1A1 P00352 1/20 0.38
HPGD P15428 1/20 0.38
KMT2A Q03164 1/20 0.38
SMN1; SMN2 Q16637 1/20 0.38
MMP1 P03956 1/20 0.37
PLA2G4A P47712 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL963741 1.00 PLA2G4B (0.42) PLA2G4BTP53TSHRMLYCDRARB
SCHEMBL29645014 0.94 PLA2G4B (0.40) PLA2G4BTP53TSHRMLYCDRARB
SCHEMBL546992 0.94 PLA2G4B (0.44) PLA2G4BTP53TSHRRARBGAA
SCHEMBL546993 0.94 PLA2G4B (0.44) PLA2G4BTP53TSHRRARBGAA
SCHEMBL2610386 0.94 PLA2G4B (0.44) PLA2G4BTP53TSHRRARBGAA
SCHEMBL3215754 0.92 PLA2G4B (0.42) PLA2G4BTP53TSHRRARBGAA
SCHEMBL2610387 0.90 PLA2G4B (0.48) PLA2G4BTP53TSHRRARBGAA
SCHEMBL2607824 0.89 PLA2G4B (0.40) PLA2G4BTP53TSHRRARBGAA
SCHEMBL2757709 0.89 PLA2G4B (0.40) PLA2G4BTP53TSHRRARBGAA
SCHEMBL546645 0.88 PLA2G4B (0.42) PLA2G4BTP53TSHRRARBGAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115885217-A Negative resist film laminate and pattern forming method 信越化学工业株式会社 2023-03-31 CN disclosed
CN-114600045-A Photosensitive resin composition, photosensitive dry film and pattern forming method 信越化学工业株式会社 2022-06-07 CN disclosed
EP-2081083-B1 Positive resist compositions and patterning process SHINETSU CHEMICAL CO (JP) 2011-09-21 EP disclosed
EP-2090598-B1 Polymer, resist composition, and patterning process SHINETSU CHEMICAL CO (JP) 2011-06-29 EP disclosed
US-7871752-B2 Lactone-containing compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-01-18 US disclosed
US-20080026331-A1 Lactone-containing compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-01-31 US disclosed