⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Trimethylammonium SCHEMBL6700448 | 0.95 | ALDH1A1 (0.31) | — | |
| SCHEMBL2270777 | 0.67 | — | — | |
| Trimethylammonium SCHEMBL27407369 | 0.67 | — | — | |
| Trimethylammonium SCHEMBL27844569 | 0.63 | — | — | |
| Trimethylammonium SCHEMBL27548629 | 0.63 | — | — | |
| Trimethylammonium SCHEMBL4521417 | 0.60 | — | — | |
| SCHEMBL10425918 | 0.59 | CA12 (0.73) | — | |
| N,N-Dimethylethanaminium SCHEMBL352062 | 0.59 | — | — | |
| N,N-Dimethylethanaminium SCHEMBL2146567 | 0.59 | TSHR (0.36) | — | |
| SCHEMBL4658729 | 0.59 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 92 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12518966-B2 | Selective plasma enhanced atomic layer deposition | VERSUM MATERIALS US, LLC (US) | 2026-01-06 | — | — | US | claimed |
| US-20240047196-A1 | SELECTIVE THERMAL ATOMIC LAYER DEPOSITION | VERSUM MAT US LLC (US) | 2024-02-08 | — | — | US | claimed |
| US-20240014036-A1 | SELECTIVE PLASMA ENHANCED ATOMIC LAYER DEPOSITION | VERSUM MATERIALS US, LLC | 2024-01-11 | — | — | US | claimed |
| CN-116918029-A | selective thermal atomic layer deposition | 弗萨姆材料美国有限责任公司 | 2023-10-20 | — | — | CN | claimed |
| CN-116761906-A | Selective plasma enhanced atomic layer deposition | 弗萨姆材料美国有限责任公司 | 2023-09-15 | — | — | CN | claimed |
| EP-4241299-A1 | SELECTIVE THERMAL ATOMIC LAYER DEPOSITION | Versum Materials US, LLC (US) | 2023-09-13 | — | — | EP | claimed |
| EP-4240886-A1 | SELECTIVE PLASMA ENHANCED ATOMIC LAYER DEPOSITION | Versum Materials US, LLC (US) | 2023-09-13 | — | — | EP | claimed |
| WO-2022119860-A9 | SELECTIVE THERMAL ATOMIC LAYER DEPOSITION | VERSUM MATERIAL US, LLC (US) | 2023-08-24 | — | — | WO | claimed |
| US-11649547-B2 | Deposition of carbon doped silicon oxide | VERSUM MATERIALS US, LLC (US) | 2023-05-16 | — | — | US | claimed |
| WO-2022119860-A1 | SELECTIVE THERMAL ATOMIC LAYER DEPOSITION | VERSUM MATERIAL US, LLC (US) | 2022-06-09 | — | — | WO | claimed |
| EP-2924143-A1 | COMPOSITIONS AND METHODS FOR THE DEPOSITION OF SILICON OXIDE FILMS | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2015-09-30 | — | — | EP | claimed |
| CN-102915908-A | Pretreatment method for silanization and silanization method comprising the method | SEMICONDUCTOR MFG INT SHANGHAI | 2013-02-06 | — | — | CN | claimed |
| CN-101048857-B | Recovery of hydrophobicity of low-k and ultra-low-k organosilicate films used as intermetal dielectrics | IBM | 2010-10-13 | — | — | CN | claimed |
| CN-101640170-A | Photoetching method capable of reducing width of exposure pattern | SEMICONDUCTOR MFG INT SHANGHAI | 2010-02-03 | — | — | CN | claimed |
| CN-101048857-A | Recovery of hydrophobicity of low-k and ultra-low-k organosilicate films used as intermetal dielectrics | IBM (US) | 2007-10-03 | — | — | CN | claimed |
| US-7179758-B2 | Recovery of hydrophobicity of low-k and ultra low-k organosilicate films used as inter metal dielectrics | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2007-02-20 | — | — | US | claimed |
| CN-1272831-C | Fineness figure forming method | HAIRYOKSA SEMICONDUCTOR CO LTD (KR) | 2006-08-30 | — | — | CN | claimed |
| CN-1447386-A | Fineness figure forming method | HAIRYOKSA SEMICONDUCTOR CO LTD (KR) | 2003-10-08 | — | — | CN | claimed |
| US-6316162-B1 | PHOTORESISTS PATTERNS AND MALEIC ANHYDRIDE-NORBORNENE ESTER COPOLYMERS AND PHOTOACID GENERATORS, COATINGS AND EXPOSURE, SPRAYING SILYLATION AND DRY ETCHING | HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) | 2001-11-13 | — | — | US | claimed |
| US-6225020-B1 | SUCH AS USED IN 4 G OR 16 G DRAM SEMICONDUCTOR DEVICES USING A LIGHT SOURCE SUCH AS ARF, AN E-BEAM, EUV, OR AN ION BEAM, PHOTORESIST FOR THE TOP SURFACE IMAGE (TSI) PROCESS USING SILYLATION, MALEIMIDE ANDNORBONENE CARBOXYLATE COMONOMERS, | HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) | 2001-05-01 | — | — | US | claimed |