SCHEMBL9687175

SCHEMBL9687175

CC(=O)OCc1c([N+](=O)[O-])cccc1[N+](=O)[O-]

nearest known ligand 0.46

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 6/20 0.46
TDP1 Q9NUW8 4/20 0.46
GPR35 Q9HC97 2/20 0.46
MAOB P27338 1/20 0.44
TSHR P16473 3/20 0.44
L3MBTL1 Q9Y468 1/20 0.44
HTT P42858 1/20 0.42
SMN1; SMN2 Q16637 1/20 0.42
ERN1 O75460 1/20 0.41
THRB P10828 1/20 0.41
FBP1 P09467 1/20 0.40
MEN1 O00255 1/20 0.40
KMT2A Q03164 1/20 0.40
HSD17B10 Q99714 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11240270 0.91 GPR35 (0.47) ALDH1A1TDP1GPR35MAOBTSHR
SCHEMBL27408702 0.91 TDP1 (0.50) ALDH1A1TDP1GPR35MAOBTSHR
SCHEMBL159208 0.89 ALDH1A1 (0.42) ALDH1A1TDP1GPR35MAOBTSHR
SCHEMBL27408562 0.89 MAOB (0.46) ALDH1A1TDP1GPR35MAOBTSHR
SCHEMBL14253713 0.89 ALDH1A1 (0.40) ALDH1A1TDP1GPR35MAOBTSHR
SCHEMBL8703260 0.88 TSHR (0.55) ALDH1A1TDP1MAOBTSHRL3MBTL1
SCHEMBL11025770 0.84 MAOB (0.41) ALDH1A1TDP1GPR35MAOBTSHR
SCHEMBL15969165 0.82 ALDH1A1 (0.44) ALDH1A1TDP1GPR35TSHRL3MBTL1
SCHEMBL1108184 0.81 MAOB (0.61) ALDH1A1MAOBTSHRL3MBTL1HTT
SCHEMBL27715899 0.81 KMT2A (0.46) ALDH1A1TDP1GPR35L3MBTL1HTT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-103476767-B Heterocyclic compounds as PI3 kinase inhibitors HOFFMANN LA ROCHE 2015-06-10 CN disclosed
US-7645812-B2 Thin film transistor and flat panel display including the same SAMSUNG MOBILE DISPLAY CO., LTD. (KR) 2010-01-12 US disclosed
US-7579131-B2 Positive resist composition and method of forming resist pattern using the same FUJIFILM CORPORATION (JP) 2009-08-25 US disclosed
US-7579131-B2 Positive resist composition and method of forming resist pattern using the same FUJIFILM CORPORATION (JP) 2009-08-25 US disclosed
US-7521168-B2 Compound that has a reduction potential higher than that of diphenyl iodonium salt and generates an acid upon irradiation of an actinic ray or radiation. FUJIFILM CORPORATION (JP) 2009-04-21 US disclosed
US-7214467-B2 Photosensitive resin composition FUJIFILM CORPORATION (JP) 2007-05-08 US disclosed
US-7214467-B2 Photosensitive resin composition FUJIFILM CORPORATION (JP) 2007-05-08 US disclosed
US-7202015-B2 Positive photoresist composition and pattern making method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-04-10 US disclosed
US-7202015-B2 Positive photoresist composition and pattern making method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-04-10 US disclosed
US-7198880-B2 Positive resist composition FUJIFILM CORPORATION (JP) 2007-04-03 US disclosed
US-7198880-B2 Positive resist composition FUJIFILM CORPORATION (JP) 2007-04-03 US disclosed
US-7163776-B2 Positive-working resist composition FUJI PHOTO FILM CO., LTD. (JP) 2007-01-16 US disclosed
US-7163776-B2 Positive-working resist composition FUJI PHOTO FILM CO., LTD. (JP) 2007-01-16 US disclosed
US-7160666-B2 Photosensitive resin composition FUJI PHOTO FILM CO., LTD. (JP) 2007-01-09 US disclosed
US-7160666-B2 Photosensitive resin composition FUJI PHOTO FILM CO., LTD. (JP) 2007-01-09 US disclosed
US-7157206-B2 Resin containing an acid-decomposable group such as bis(trifluoromethyl)methanol group, to generate alkali-soluble group, and acid generators selected from fluorine-substituted or non-fluorine substituted aromatic or aliphatic carboxylic acid generators or sulfonic acid generators; microlithography FUJI PHOTO FILM CO., LTD. (JP) 2007-01-02 US disclosed
US-7157206-B2 Resin containing an acid-decomposable group such as bis(trifluoromethyl)methanol group, to generate alkali-soluble group, and acid generators selected from fluorine-substituted or non-fluorine substituted aromatic or aliphatic carboxylic acid generators or sulfonic acid generators; microlithography FUJI PHOTO FILM CO., LTD. (JP) 2007-01-02 US disclosed
EP-0268989-B1 IMIDAZOPYRIDINE COMPOUNDS AND PROCESSES FOR PREPARATION THEREOF FUJISAWA PHARMACEUTICAL CO., LTD. (JP) 1992-07-08 EP disclosed
US-4831041-A ANTIULCER AGENTS FUJISAWA PHARMACEUTICAL CO., LTD. (JP) 1989-05-16 US disclosed
EP-0268989-A1 Imidazopyridine compounds and processes for preparation thereof FUJISAWA PHARMACEUTICAL CO., LTD. (JP) 1988-06-01 EP disclosed