⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL6891027 | 1.00 | — | — | |
| SCHEMBL2844496 | 0.82 | — | — | |
| SCHEMBL9948632 | 0.82 | — | — | |
| SCHEMBL8330981 | 0.82 | — | — | |
| Ammonia Solution, Strong SCHEMBL2938012 | 0.82 | — | — | |
| Ammonia Solution, Strong SCHEMBL5707312 | 0.82 | — | — | |
| Ammonia Solution, Strong SCHEMBL8010695 | 0.82 | — | — | |
| SCHEMBL2844495 | 0.82 | — | — | |
| Ammonia Solution, Strong SCHEMBL1287588 | 0.82 | — | — | |
| Ammonia Solution, Strong SCHEMBL4283139 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 681 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-222226530-U | Round target for improving uniformity of target coating | 宁波江丰电子材料股份有限公司 | 2024-12-24 | — | — | CN | claimed |
| CN-118932331-A | Ablation-resistant composite layer material and corresponding composite layer preparation method | 华中科技大学 | 2024-11-12 | — | — | CN | claimed |
| CN-118678691-A | Heat assisted SOT-MRAM device, memory array and memory chip | 华为技术有限公司 | 2024-09-20 | — | — | CN | claimed |
| CN-118460965-A | Metal heating film and ceramic heating body for electronic atomization device | 思摩尔国际控股有限公司 | 2024-08-09 | — | — | CN | claimed |
| CN-118217061-A | Fusion device for surface vapor deposition of tantalum-copper coating | 北京市春立正达医疗器械股份有限公司 | 2024-06-21 | — | — | CN | claimed |
| US-11991937-B2 | Semiconductor device and method for manufacturing the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) | 2024-05-21 | — | — | US | claimed |
| CN-115417399-B | Copper-tantalum co-doped hard carbon composite material, and preparation method and application thereof | 深圳市金牌新能源科技有限责任公司 | 2024-03-26 | — | — | CN | claimed |
| CN-117532007-A | Method for preparing homogeneous copper-tantalum nano alloy powder by wet chemical method | 兰州大学 | 2024-02-09 | — | — | CN | claimed |
| CN-116808301-A | Bone implant material with tantalum-copper coating deposited on surface and preparation method thereof | 北京市春立正达医疗器械股份有限公司 | 2023-09-29 | — | — | CN | claimed |
| US-11640958-B2 | Packaged die and RDL with bonding structures therebetween | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (TW) | 2023-05-02 | — | — | US | claimed |
| US-6743710-B2 | Stacked fill structures for support of dielectric layers | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2004-06-01 | — | — | US | claimed |
| EP-1351291-A2 | Copper doped transition layer for improving copper interconnection reliability | TEXAS INSTRUMENTS INCORPORATED (US) | 2003-10-08 | — | — | EP | claimed |
| US-20030186543-A1 | INTEGRATED CIRCUIT IN SURFACE OF SEMICONDUCTOR COMPRISING DIELECTRIC LAYER WITH HOLE, BARRIER LAYER OVER DIELECTRIC INCLUDING WALLS AND BOTTOM OF HOLE AND OPERABLE TO SEAL COPPER, TRANSITION LAYER WITH COPPER DOPING GRADIENT | TEXAS INSTRUMENTS INCORPORATED | 2003-10-02 | — | — | US | claimed |
| US-20030141598-A1 | Stacked fill structures for support of dielectric layers | AURIGA INNOVATIONS, INC. (CA) | 2003-07-31 | — | — | US | claimed |
| US-20030094696-A1 | STACKED FILL STRUCTURES FOR SUPPORT OF DIELECTRIC LAYERS | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2003-05-22 | — | — | US | claimed |
| US-6559543-B1 | Stacked fill structures for support of dielectric layers | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2003-05-06 | — | — | US | claimed |
| US-20010032787-A1 | Method to plate C4 to copper stud | UZOH CYPRIAN E (US) | 2001-10-25 | — | — | US | claimed |
| US-6083842-A | Fabrication of a via plug having high aspect ratio with a diffusion barrier layer effectively surrounding the via plug | ADVANCED MICRO DEVICES INC. (US) | 2000-07-04 | — | — | US | claimed |
| US-6077780-A | Method for filling high aspect ratio openings of an integrated circuit to minimize electromigration failure | ADVANCED MICRO DEVICES, INC. (US) | 2000-06-20 | — | — | US | claimed |
| US-6001415-A | Via with barrier layer for impeding diffusion of conductive material from via into insulator | ADVANCED MICRO DEVICES, INC. (US) | 1999-12-14 | — | — | US | claimed |