SCHEMBL9718829

SCHEMBL9718829

Clc1cccc(Cl)c1C1=C2C=CC(=N2)C(c2c(Cl)cccc2Cl)=C2C=CC(=N2)C(c2c(Cl)cccc2Cl)=C2C=CC(=N2)C(c2c(Cl)cccc2Cl)=C2C=CC1=N2

nearest known ligand 0.32

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
▸ CYP1A2 P05177 1/20 0.32
▸ CYP2A6 P11509 1/20 0.32
▸ LMNA P02545 2/20 0.31
▸ TSHR P16473 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7156527 0.87 JAK2 (0.31) —
SCHEMBL9718917 0.78 CYP2A6 (0.40) CYP2A6LMNATSHR
SCHEMBL12094366 0.75 — —
SCHEMBL9718839 0.68 CYP1A2 (0.36) CYP1A2CYP2A6LMNA
SCHEMBL3243506 0.68 — —
SCHEMBL5015297 0.67 KDM4E (0.38) CYP1A2LMNATSHR
SCHEMBL5013871 0.67 KDM4E (0.38) CYP1A2LMNATSHR
SCHEMBL1438735 0.65 — —
SCHEMBL2517442 0.65 ALDH1A1 (0.35) LMNA
SCHEMBL7996476 0.65 ALDH1A1 (0.35) LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-5103027-A Catalyst selectivity ARCO CHEMICAL TECHNOLOGY, L.P. (US) 1992-04-07 — — US claimed
US-11935803-B2 Resin composition, laminate, semiconductor wafer with resin composition layer, substrate for mounting semiconductor with resin composition layer and semiconductor device MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2024-03-19 — — US disclosed
US-20210277221-A1 RESIN COMPOSITION, LAMINATE, SEMICONDUCTOR WAFER WITH RESIN COMPOSITION LAYER, SUBSTRATE FOR MOUNTING SEMICONDUCTOR WITH RESIN COMPOSITION LAYER AND SEMICONDUCTOR DEVICE MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-09-09 — — US disclosed
EP-3786200-A1 RESIN COMPOSITION, LAMINATE, RESIN COMPOSITION LAYER-ATTACHED SEMICONDUCTOR WAFER, SUBSTRATE FOR MOUNTING RESIN COMPOSITION LAYER-ATTACHED SEMICONDUCTOR, AND SEMICONDUCTOR DEVICE MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-03-03 — — EP disclosed
EP-2711398-A1 MAGNETICALLY ENHANCED RESIN Tanaka Seimitsu Kogyo Co., Ltd. (JP) 2014-03-26 — — EP disclosed
US-20140077120-A1 Magnetically Enhanced Resin Tanaka Seimitsu Kogyo Co.Ltd. (JP) 2014-03-20 — — US disclosed
CN-1298721-C Method of separating, large scale preparing porphyrin from complex reaction system SHANGHAI INST ORGANIC CHEM (CN) 2007-02-07 — — CN disclosed
CN-1537854-A Method of separating, large scale preparing porphyrin from complex reaction system 中国科学院上海有机化学研究所 2004-10-20 — — CN disclosed
US-5103027-A Catalyst selectivity ARCO CHEMICAL TECHNOLOGY, L.P. (US) 1992-04-07 — — US disclosed
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