SCHEMBL972471

SCHEMBL972471

CC[Si](C)(C)N(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1345170 0.83
SCHEMBL22200158 0.80
SCHEMBL6046989 0.77
SCHEMBL2273674 0.74
SCHEMBL1428307 0.74
SCHEMBL1048126 0.72
SCHEMBL2102907 0.72
SCHEMBL1526298 0.70
SCHEMBL422241 0.70 DNM1 (0.33)
SCHEMBL23243610 0.69

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-111886676-B Method for treating surface of wafer and composition therefor 中央硝子株式会社 2024-09-27 CN claimed
US-11603485-B2 Surface treatment method of wafer and composition used for said method CENTRAL GLASS COMPANY, LIMITED (JP) 2023-03-14 US claimed
CN-118974894-A Surface treatment composition and method for producing wafer 中央硝子株式会社 2024-11-15 CN disclosed
CN-111886676-B Method for treating surface of wafer and composition therefor 中央硝子株式会社 2024-09-27 CN disclosed
CN-117766374-A Substrate processing method, semiconductor device manufacturing method, substrate processing system, and recording medium 株式会社国际电气 2024-03-26 CN disclosed
CN-117766384-A Substrate processing method, semiconductor device manufacturing method, substrate processing system, and recording medium 株式会社国际电气 2024-03-26 CN disclosed
CN-117702084-A Substrate processing method, semiconductor device manufacturing method, substrate processing apparatus, and recording medium 株式会社国际电气 2024-03-15 CN disclosed
CN-117253819-A Substrate processing method, semiconductor device manufacturing method, substrate processing apparatus, and recording medium 株式会社国际电气 2023-12-19 CN disclosed
US-11732115-B2 Tire for vehicle wheels PIRELLI TYRE S.P.A. (IT) 2023-08-22 US disclosed
US-11603485-B2 Surface treatment method of wafer and composition used for said method CENTRAL GLASS COMPANY, LIMITED (JP) 2023-03-14 US disclosed
US-10882983-B2 Rubber composition TRINSEO EUROPE GMBH (CH) 2021-01-05 US disclosed
WO-2013149349-A1 IONIC COMPOUNDS HAVING A SILYLOXY GROUP HYDRO-QUéBEC (CA) 2013-10-10 WO disclosed
CN-102803259-A 1H-Imidazo[4, 5-c]quinolinone compounds, useful for the treatment of proliferative diseases NOVARTIS AG 2012-11-28 CN disclosed
CN-102137722-A Hydrophobic and oleophobic coating and method for preparing the same SONIC INNOVATIONS INC 2011-07-27 CN disclosed
CN-102099425-A Process for preparing redispersible surface-modified silicon dioxide particles EVONIK DEGUSSA GMBH 2011-06-15 CN disclosed
CN-102099424-A Dispersion of hydrophobicized silicon dioxide particles and granules thereof EVONIK DEGUSSA GMBH 2011-06-15 CN disclosed
US-7871883-B2 Method of manufacturing semiconductor device includes the step of depositing the capacitor insulating film in a form of a hafnium silicate SONY CORPORATION (JP) 2011-01-18 US disclosed
CN-1329470-C Binding composition, electric circuit connecting material, electric component connecting structure and production thereof HITACHI CHEMICAL CO LTD (JP) 2007-08-01 CN disclosed
US-20070066010-A1 Method of manufacturing semiconductor device SONY CORPORATION (JP) 2007-03-22 US disclosed
CN-1680507-A Binding composition, electric circuit connecting material, electric component connecting structure and production thereof HITACHI CHEMICAL CO LTD (JP) 2005-10-12 CN disclosed