SCHEMBL1345170

SCHEMBL1345170

CN(C)[Si](C)(C)CC[Si](C)(C)N(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL23243610 0.85
SCHEMBL972471 0.83
SCHEMBL15182783 0.82 ALDH1A1 (0.30)
SCHEMBL15182784 0.82 ALDH1A1 (0.30)
SCHEMBL2273674 0.82
SCHEMBL13137384 0.80
SCHEMBL16169615 0.79
SCHEMBL20536297 0.78
SCHEMBL422241 0.77 DNM1 (0.33)
SCHEMBL14328008 0.76

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 172 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11631580-B2 Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials VERSUM MATERIALS US, LLC (US) 2023-04-18 US claimed
US-20220189767-A1 FORMULATION FOR DEPOSITION OF SILICON DOPED HAFNIUM OXIDE AS FERROELECTRIC MATERIALS VERSUM MATERIALS US, LLC (US) 2022-06-16 US claimed
US-11081337-B2 Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials Versum Materials U.S., LLC (US) 2021-08-03 US claimed
US-20180269057-A1 Formulation for Deposition of Silicon Doped Hafnium Oxide as Ferroelectric Materials VERSUM MATERIALS US, LLC (US) 2018-09-20 US claimed
WO-2018170126-A1 NEW FORMULATION FOR DEPOSITION OF SILICON DOPED HAFNIUM OXIDE AS FERROELECTRIC MATERIALS VERSUM MATERIALS US, LLC (US) 2018-09-20 WO claimed
US-8062820-B2 Toner composition and method of preparing same CABOT CORPORATION (US) 2011-11-22 US claimed
EP-2014797-A2 Coating composition for interconnection part of electrode and plasma display panel including the same Samsung SDI Co., Ltd. (KR) 2009-01-14 EP claimed
US-20080303439-A1 Coating composition for interconnection part of electrode and plasma display panel including the same SAMSUNG SDI CO., LTD., A CORP. OF THE REPUBLIC OF KOREA (KR) 2008-12-11 US claimed
WO-2007133669-A2 TONER COMPOSITION AND METHOD OF PREPARING SAME CABOT CORPORATION (US) 2007-11-22 WO claimed
US-20070264502-A1 Toner composition and method of preparing same CABOT CORPORATION (US) 2007-11-15 US claimed
US-20030021996-A1 Release surfaces GUDIMENKO YURI (CA) 2003-01-30 US claimed
EP-0667562-B1 Charge injection barrier for positive charging organic photoconductor HEWLETT PACKARD CO (US) 2001-03-21 EP claimed
EP-4080548-B1 METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND PROGRAM KOKUSAI ELECTRIC CORP (JP) 2026-04-29 EP disclosed
EP-4724526-A1 CONDENSATION CURE SILICONE ADHESIVE Momentive Performance Materials Inc. (US) 2026-04-15 EP disclosed
US-12581878-B2 Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium Kokusai Electric Corporation (JP) 2026-03-17 US disclosed
EP-4705309-A1 CHLOROSILYL-SUBSTITUTED SILACYCLOALKANES AND THEIR USE FOR FORMATION OF FILMS COMPRISING SILICON AND OXYGEN Versum Materials US, LLC (US) 2026-03-11 EP disclosed
US-5286890-A Aromatic amine terminated silicone monomers, oligomers, and polymers therefrom HUGHES AIRCRAFT COMPANY (US) 1994-02-15 US disclosed
EP-0318893-B1 Titanocenes, their use and N-substituted fluoroanilines CIBA GEIGY AG (CH) 1994-01-19 EP disclosed
US-5026625-A Photoinitiators for polymerization of ethylenically unsaturated compounds CIBA-GEIGY CORPORATION (US) 1991-06-25 US disclosed
EP-0318893-A2 Titanocenes, their use and N-substituted fluoroanilines CIBA-GEIGY AG (CH) 1989-06-07 EP disclosed