Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | LTA4H | P09960 | 2/20 | 0.44 |
| ▸ | CYP2C9 | P11712 | 4/20 | 0.42 |
| ▸ | CYP2C19 | P33261 | 4/20 | 0.42 |
| ▸ | CYP1A2 | P05177 | 3/20 | 0.42 |
| ▸ | TSHR | P16473 | 3/20 | 0.41 |
| ▸ | L3MBTL1 | Q9Y468 | 2/20 | 0.41 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.41 |
| ▸ | CYP2D6 | P10635 | 3/20 | 0.41 |
| ▸ | CYP19A1 | P11511 | 3/20 | 0.41 |
| ▸ | TLR8 | Q9NR97 | 1/20 | 0.38 |
| ▸ | CYP3A4 | P08684 | 3/20 | 0.37 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.37 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.37 |
| ▸ | NPC1 | O15118 | 1/20 | 0.37 |
| ▸ | MAPT | P10636 | 1/20 | 0.37 |
| ▸ | HPGD | P15428 | 1/20 | 0.37 |
| ▸ | RAB9A | P51151 | 1/20 | 0.37 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.37 |
| ▸ | TP53 | P04637 | 1/20 | 0.36 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5549263 | 0.88 | LTA4H (0.39) | LTA4HCYP2C9CYP2C19CYP1A2TSHR | |
| SCHEMBL6697531 | 0.87 | CYP1A2 (0.53) | LTA4HCYP2C9CYP2C19CYP1A2TSHR | |
| SCHEMBL728144 | 0.87 | LTA4H (0.38) | LTA4HCYP2C9CYP2C19CYP1A2TSHR | |
| SCHEMBL430189 | 0.86 | ALDH1A1 (0.38) | LTA4HCYP2C9CYP2C19CYP1A2TSHR | |
| SCHEMBL16536448 | 0.84 | HTR1B (0.43) | CYP2C9L3MBTL1TDP1TLR8 | |
| SCHEMBL23493441 | 0.82 | LTA4H (0.35) | LTA4HCYP2C9CYP2C19CYP1A2TSHR | |
| SCHEMBL29434675 | 0.82 | LTA4H (0.35) | LTA4HCYP2C9CYP2C19CYP1A2TSHR | |
| SCHEMBL9001096 | 0.81 | TSHR (0.40) | LTA4HTSHRTLR8CYP3A4ALDH1A1 | |
| SCHEMBL19809256 | 0.81 | TSHR (0.41) | LTA4HTSHRL3MBTL1TDP1CYP3A4 | |
| SCHEMBL29434657 | 0.81 | TSHR (0.42) | LTA4HCYP2C9CYP2C19CYP1A2TSHR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 130 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1520891-B1 | FILM FORMING COMPOSITION, PROCESS FOR PRODUCING FILM FORMING COMPOSITION, INSULATING FILM FORMING MATERIAL, PROCESS FOR FORMING FILM, AND SILICA-BASED FILM | JSR CORP (JP) | 2019-05-01 | — | — | EP | disclosed |
| US-10025188-B2 | Resist pattern-forming method | JSR CORPORATION (JP) | 2018-07-17 | — | — | US | disclosed |
| US-20170322492-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-11-09 | — | — | US | disclosed |
| US-20160320705-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2016-11-03 | — | — | US | disclosed |
| US-9434609-B2 | Method for forming pattern, and polysiloxane composition | JSR CORPORATION (JP) | 2016-09-06 | — | — | US | disclosed |
| US-9329478-B2 | Polysiloxane composition and pattern-forming method | JSR CORPORATION (JP) | 2016-05-03 | — | — | US | disclosed |
| US-20160097978-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2016-04-07 | — | — | US | disclosed |
| US-9233840-B2 | Method for improving self-assembled polymer features | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2016-01-12 | — | — | US | disclosed |
| US-9126231-B2 | Insulation pattern-forming method and insulation pattern-forming material | JSR CORPORATION (JP) | 2015-09-08 | — | — | US | disclosed |
| US-9116427-B2 | Composition for forming resist underlayer film and pattern-forming method | JSR CORPORATION (JP) | 2015-08-25 | — | — | US | disclosed |
| US-20020045693-A1 | Composition for film formation, method of film formation and silica-based film | JSR CORPORATION (JP) | 2002-04-18 | — | — | US | disclosed |
| US-20020020327-A1 | Composition for film formation, method of film formation, and silica-based film | JSR CORPORATION (JP) | 2002-02-21 | — | — | US | disclosed |
| US-20010055892-A1 | Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film | JSR CORPORATION (JP) | 2001-12-27 | — | — | US | disclosed |
| US-20010051446-A1 | Method of manufacturing insulating film-forming material, the insulating film-forming material, and insulating film | JSR CORPORATION (JP) | 2001-12-13 | — | — | US | disclosed |
| EP-1160848-A2 | Composition for silica-based film formation | JSR Corporation (JP) | 2001-12-05 | — | — | EP | disclosed |
| EP-1148105-A2 | Composition for film formation, method of film formation, and silica-based film | JSR Corporation (JP) | 2001-10-24 | — | — | EP | disclosed |
| EP-1146092-A2 | Composition for film formation, method of film formation, and silica-based film | JSR Corporation (JP) | 2001-10-17 | — | — | EP | disclosed |
| EP-1127929-A2 | Composition for film formation, method of film formation, and silica-based film | JSR Corporation (JP) | 2001-08-29 | — | — | EP | disclosed |
| EP-1090967-A2 | Composition for film formation, method of film formation, and insulating film | JSR Corporation (JP) | 2001-04-11 | — | — | EP | disclosed |
| EP-1088868-A2 | Composition for film formation, method of film formation, and insulating film | JSR Corporation (JP) | 2001-04-04 | — | — | EP | disclosed |