⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5309920 | 0.98 | PAOX (0.45) | — | |
| SCHEMBL5310130 | 0.98 | PAOX (0.45) | — | |
| SCHEMBL344693 | 0.92 | — | — | |
| SCHEMBL4202303 | 0.87 | ALDH1A1 (0.34) | — | |
| SCHEMBL4209411 | 0.84 | SIGMAR1 (0.37) | — | |
| SCHEMBL4202305 | 0.84 | SIGMAR1 (0.37) | — | |
| SCHEMBL27099 | 0.81 | — | — | |
| SCHEMBL4211600 | 0.81 | TSHR (0.32) | — | |
| SCHEMBL995551 | 0.79 | — | — | |
| SCHEMBL28852761 | 0.79 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 62 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-3144371-B1 | HYDROXYALKYL SUBSTITUTED SUCCINIMIDES AND FUELS CONTAINING THEM | AFTON CHEMICAL CORP (US) | 2021-10-06 | — | — | EP | claimed |
| CN-106544063-B | The succinimide that hydroxyalkyl replaces and the fuel containing it | 雅富顿化学公司 | 2019-05-03 | — | — | CN | claimed |
| CN-106544063-B | The succinimide that hydroxyalkyl replaces and the fuel containing it | 雅富顿化学公司 | 2019-05-03 | — | — | CN | disclosed |
| US-20150296646-A1 | PROTECTIVE PLATE AND DISPLAY DEVICE | SHARP KABUSHIKI KAISHA (JP) | 2015-10-15 | — | — | US | disclosed |
| US-8790990-B2 | Silica-based film forming material for formation of air gaps, and method for forming air gaps | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-07-29 | — | — | US | disclosed |
| US-8404786-B2 | Polymer and process for producing the same, composition for forming insulating film, and insulating film and method of forming the same | JSR CORPORATION (JP) | 2013-03-26 | — | — | US | disclosed |
| EP-1705208-B1 | COMPOSITION FOR FORMING INSULATING FILM, METHOD FOR PRODUCING SAME, SILICA INSULATING FILM, AND METHOD FOR FORMING SAME | JSR CORP (JP) | 2013-03-20 | — | — | EP | disclosed |
| US-8318582-B2 | Method of forming a trench isolation | JSR CORPORATION (JP) | 2012-11-27 | — | — | US | disclosed |
| US-20110189833-A1 | SILICA-BASED FILM FORMING MATERIAL FOR FORMATION OF AIR GAPS, AND METHOD FOR FORMING AIR GAPS | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-08-04 | — | — | US | disclosed |
| US-7939590-B2 | Composition for forming silica-based coating film | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-05-10 | — | — | US | disclosed |
| US-20110077364-A1 | COMPOSITION CONTAINING SILICON-CONTAINING POLYMER, CURED PRODUCT OF THE COMPOSITION, SILICON-CONTAINING POLYMER, AND METHOD OF PRODUCING THE SILICON-CONTAINING POLYMER | JSR CORPORATION (JP) | 2011-03-31 | — | — | US | disclosed |
| US-6413647-B1 | USEFUL AS INTERLAYER DIELECTRIC FILM IN SEMICONDUCTOR DEVICES; MECHANICAL STRENGTH | JSR CORPORATION (JP) | 2002-07-02 | — | — | US | disclosed |
| US-6410151-B1 | Composition for film formation, method of film formation, and insulating film | JSR CORPORATION (JP) | 2002-06-25 | — | — | US | disclosed |
| US-6410150-B1 | Composition for film formation, method of film formation, and insulating film | JSR CORPORATION (JP) | 2002-06-25 | — | — | US | disclosed |
| US-20010018129-A1 | Process for producing silica-based film, silica-based film, insulating film, and semiconductor device | JSR CORPORATION (JP) | 2001-08-30 | — | — | US | disclosed |
| EP-1127929-A2 | Composition for film formation, method of film formation, and silica-based film | JSR Corporation (JP) | 2001-08-29 | — | — | EP | disclosed |
| EP-1122770-A2 | Silica-based insulating film and its manufacture | JSR Corporation (JP) | 2001-08-08 | — | — | EP | disclosed |
| EP-1090967-A2 | Composition for film formation, method of film formation, and insulating film | JSR Corporation (JP) | 2001-04-11 | — | — | EP | disclosed |
| EP-1088868-A2 | Composition for film formation, method of film formation, and insulating film | JSR Corporation (JP) | 2001-04-04 | — | — | EP | disclosed |
| US-4223138-A | VAPORIZATION, CONDENSATION, RETARDING FLOW TO REACTION ZONE | BAYER AKTIENGESELLSCHAFT (DE) | 1980-09-16 | — | — | US | disclosed |