Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA4 | P22748 | 2/20 | 0.48 |
| ▸ | LTA4H | P09960 | 4/20 | 0.41 |
| ▸ | TSHR | P16473 | 1/20 | 0.39 |
| ▸ | NPC1 | O15118 | 3/20 | 0.37 |
| ▸ | RAB9A | P51151 | 3/20 | 0.37 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.37 |
| ▸ | TP53 | P04637 | 1/20 | 0.37 |
| ▸ | NFKB1 | P19838 | 1/20 | 0.37 |
| ▸ | NFKB2 | Q00653 | 1/20 | 0.37 |
| ▸ | RELA | Q04206 | 1/20 | 0.37 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.37 |
| ▸ | S1PR1 | P21453 | 1/20 | 0.35 |
| ▸ | NR1H4 | Q96RI1 | 1/20 | 0.35 |
| ▸ | MEN1 | O00255 | 1/20 | 0.34 |
| ▸ | MAPT | P10636 | 1/20 | 0.34 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.34 |
| ▸ | KCNA3 | P22001 | 1/20 | 0.33 |
| ▸ | PDE4B | Q07343 | 1/20 | 0.32 |
| ▸ | TRPA1 | O75762 | 1/20 | 0.32 |
| ▸ | POLB | P06746 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL976629 | 0.87 | CA4 (0.48) | CA4LTA4HTSHRNPC1RAB9A | |
| SCHEMBL977231 | 0.87 | CA4 (0.55) | CA4LTA4HTSHRNPC1RAB9A | |
| SCHEMBL974881 | 0.80 | CA4 (0.48) | CA4LTA4HTSHRNPC1RAB9A | |
| SCHEMBL188026 | 0.76 | CA4 (0.48) | CA4LTA4HTSHRNPC1RAB9A | |
| SCHEMBL232678 | 0.76 | CA4 (0.48) | CA4LTA4HTSHRNPC1RAB9A | |
| SCHEMBL308311 | 0.76 | CA4 (0.48) | CA4LTA4HTSHRNPC1RAB9A | |
| SCHEMBL9678425 | 0.76 | CA4 (0.48) | CA4LTA4HTSHRNPC1RAB9A | |
| Ammonia Solution, Strong SCHEMBL28447150 | 0.74 | CA4 (0.46) | CA4LTA4HTSHRNPC1RAB9A | |
| SCHEMBL30633087 | 0.73 | CA4 (0.40) | CA4LTA4HTSHRNPC1RAB9A | |
| SCHEMBL5670727 | 0.73 | CA4 (0.41) | CA4LTA4HTSHRNPC1RAB9A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 136 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12346026-B2 | Composition for forming underlayer film, resist pattern forming method, and manufacturing method of electronic device | FUJIFILM CORPORATION (JP) | 2025-07-01 | — | — | US | disclosed |
| US-20220252985-A1 | COMPOSITION FOR FORMING UNDERLAYER FILM, RESIST PATTERN FORMING METHOD, AND MANUFACTURING METHOD OF ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2022-08-11 | — | — | US | disclosed |
| WO-2021106537-A1 | RESIST UNDERLAYER FILM-FORMING COMPOSITION, PATTERN FORMING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD | 富士フイルム株式会社 | 2021-06-03 | — | — | WO | disclosed |
| EP-1520891-B1 | FILM FORMING COMPOSITION, PROCESS FOR PRODUCING FILM FORMING COMPOSITION, INSULATING FILM FORMING MATERIAL, PROCESS FOR FORMING FILM, AND SILICA-BASED FILM | JSR CORP (JP) | 2019-05-01 | — | — | EP | disclosed |
| US-10234762-B2 | Pattern-forming method | JSR CORPORATION (JP) | 2019-03-19 | — | — | US | disclosed |
| US-10025188-B2 | Resist pattern-forming method | JSR CORPORATION (JP) | 2018-07-17 | — | — | US | disclosed |
| US-20170322492-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-11-09 | — | — | US | disclosed |
| US-20170003592-A1 | PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-01-05 | — | — | US | disclosed |
| US-20160320705-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2016-11-03 | — | — | US | disclosed |
| US-9434609-B2 | Method for forming pattern, and polysiloxane composition | JSR CORPORATION (JP) | 2016-09-06 | — | — | US | disclosed |
| US-20020045693-A1 | Composition for film formation, method of film formation and silica-based film | JSR CORPORATION (JP) | 2002-04-18 | — | — | US | disclosed |
| US-20020020327-A1 | Composition for film formation, method of film formation, and silica-based film | JSR CORPORATION (JP) | 2002-02-21 | — | — | US | disclosed |
| US-20010055892-A1 | Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film | JSR CORPORATION (JP) | 2001-12-27 | — | — | US | disclosed |
| US-20010051446-A1 | Method of manufacturing insulating film-forming material, the insulating film-forming material, and insulating film | JSR CORPORATION (JP) | 2001-12-13 | — | — | US | disclosed |
| EP-1160848-A2 | Composition for silica-based film formation | JSR Corporation (JP) | 2001-12-05 | — | — | EP | disclosed |
| EP-1148105-A2 | Composition for film formation, method of film formation, and silica-based film | JSR Corporation (JP) | 2001-10-24 | — | — | EP | disclosed |
| EP-1146092-A2 | Composition for film formation, method of film formation, and silica-based film | JSR Corporation (JP) | 2001-10-17 | — | — | EP | disclosed |
| EP-1127929-A2 | Composition for film formation, method of film formation, and silica-based film | JSR Corporation (JP) | 2001-08-29 | — | — | EP | disclosed |
| EP-1090967-A2 | Composition for film formation, method of film formation, and insulating film | JSR Corporation (JP) | 2001-04-11 | — | — | EP | disclosed |
| EP-1088868-A2 | Composition for film formation, method of film formation, and insulating film | JSR Corporation (JP) | 2001-04-04 | — | — | EP | disclosed |