SCHEMBL976629

SCHEMBL976629

C[Si](C)(Oc1ccccc1)[Si](C)(C)Oc1ccccc1

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA4 P22748 1/20 0.48
LTA4H P09960 4/20 0.45
TSHR P16473 1/20 0.45
KCNA3 P22001 1/20 0.38
MAPK1 P28482 1/20 0.36
CA5A P35218 1/20 0.36
CA5B Q9Y2D0 1/20 0.36
NR1H2 P55055 1/20 0.35
BAX Q07812 1/20 0.35
MAOA P21397 1/20 0.35
HTR1B P28222 2/20 0.34
KCNH2 Q12809 1/20 0.34
LMNA P02545 1/20 0.34
KDM4E B2RXH2 1/20 0.34
GLA P06280 1/20 0.34
MAPT P10636 1/20 0.34
KMT2A Q03164 1/20 0.34
HTR1D P28221 1/20 0.34
NPC1 O15118 1/20 0.34
RAB9A P51151 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL974831 0.87 CA4 (0.48) CA4LTA4HTSHRKCNA3MAPK1
SCHEMBL232678 0.82 CA4 (0.48) CA4LTA4HTSHRKCNA3CA5A
SCHEMBL308311 0.82 CA4 (0.48) CA4LTA4HTSHRKCNA3CA5A
SCHEMBL9678425 0.82 CA4 (0.48) CA4LTA4HTSHRKCNA3CA5A
SCHEMBL977231 0.82 CA4 (0.55) CA4LTA4HTSHRKCNA3CA5A
SCHEMBL188026 0.82 CA4 (0.48) CA4LTA4HTSHRKCNA3CA5A
Ammonia Solution, Strong SCHEMBL28447150 0.80 CA4 (0.46) CA4LTA4HTSHRKCNA3CA5A
SCHEMBL30633087 0.79 CA4 (0.40) CA4LTA4HTSHRKCNA3CA5A
SCHEMBL14776711 0.78 CA4 (0.43) CA4LTA4HTSHRKCNA3CA5A
SCHEMBL9331294 0.78 CA4 (0.43) CA4LTA4HTSHRKCNA3CA5A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 136 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12346026-B2 Composition for forming underlayer film, resist pattern forming method, and manufacturing method of electronic device FUJIFILM CORPORATION (JP) 2025-07-01 US disclosed
US-20220252985-A1 COMPOSITION FOR FORMING UNDERLAYER FILM, RESIST PATTERN FORMING METHOD, AND MANUFACTURING METHOD OF ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2022-08-11 US disclosed
WO-2021106537-A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION, PATTERN FORMING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD 富士フイルム株式会社 2021-06-03 WO disclosed
EP-1520891-B1 FILM FORMING COMPOSITION, PROCESS FOR PRODUCING FILM FORMING COMPOSITION, INSULATING FILM FORMING MATERIAL, PROCESS FOR FORMING FILM, AND SILICA-BASED FILM JSR CORP (JP) 2019-05-01 EP disclosed
US-10234762-B2 Pattern-forming method JSR CORPORATION (JP) 2019-03-19 US disclosed
US-10025188-B2 Resist pattern-forming method JSR CORPORATION (JP) 2018-07-17 US disclosed
US-20170322492-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-11-09 US disclosed
US-20170003592-A1 PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-01-05 US disclosed
US-20160320705-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2016-11-03 US disclosed
US-9434609-B2 Method for forming pattern, and polysiloxane composition JSR CORPORATION (JP) 2016-09-06 US disclosed
US-20020045693-A1 Composition for film formation, method of film formation and silica-based film JSR CORPORATION (JP) 2002-04-18 US disclosed
US-20020020327-A1 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2002-02-21 US disclosed
US-20010055892-A1 Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2001-12-27 US disclosed
US-20010051446-A1 Method of manufacturing insulating film-forming material, the insulating film-forming material, and insulating film JSR CORPORATION (JP) 2001-12-13 US disclosed
EP-1160848-A2 Composition for silica-based film formation JSR Corporation (JP) 2001-12-05 EP disclosed
EP-1148105-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2001-10-24 EP disclosed
EP-1146092-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2001-10-17 EP disclosed
EP-1127929-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2001-08-29 EP disclosed
EP-1090967-A2 Composition for film formation, method of film formation, and insulating film JSR Corporation (JP) 2001-04-11 EP disclosed
EP-1088868-A2 Composition for film formation, method of film formation, and insulating film JSR Corporation (JP) 2001-04-04 EP disclosed